SrTiO3 (STO) thin films were grown on a Si substrate and a TiN electrode by a plasma-enhanced atomic layer deposition (PEALD) process using oxygen plasma. The amorphous STO thin films deposited by the PEALD process showed excellent step coverage, in excess of 97%, and no interfacial layer was detected. The electrical properties of the TiN/STO/TiN capacitor structures were measured by capacitance-voltage (C-V) testing after low temperature annealing in an oxygen atmosphere at 500°C for 10 min. These conditions resulted in a product with the highest dielectric constant value (∼130).
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering