Enhanced electrical properties of SrTiO3 thin films grown by plasma-enhanced atomic layer deposition

C. J. Yim, S. U. Kim, Y. S. Kang, Mann-Ho Cho, Dae Hong Ko

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

SrTiO3 (STO) thin films were grown on a Si substrate and a TiN electrode by a plasma-enhanced atomic layer deposition (PEALD) process using oxygen plasma. The amorphous STO thin films deposited by the PEALD process showed excellent step coverage, in excess of 97%, and no interfacial layer was detected. The electrical properties of the TiN/STO/TiN capacitor structures were measured by capacitance-voltage (C-V) testing after low temperature annealing in an oxygen atmosphere at 500°C for 10 min. These conditions resulted in a product with the highest dielectric constant value (∼130).

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume14
Issue number10
DOIs
Publication statusPublished - 2011 Aug 18

Fingerprint

Atomic layer deposition
atomic layer epitaxy
Electric properties
electrical properties
Plasmas
Thin films
oxygen plasma
thin films
Oxygen
capacitors
capacitance
Amorphous films
permittivity
atmospheres
annealing
electrodes
electric potential
oxygen
Capacitors
Permittivity

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

@article{8ac2978cafe845728fd6a1276f0fc7e6,
title = "Enhanced electrical properties of SrTiO3 thin films grown by plasma-enhanced atomic layer deposition",
abstract = "SrTiO3 (STO) thin films were grown on a Si substrate and a TiN electrode by a plasma-enhanced atomic layer deposition (PEALD) process using oxygen plasma. The amorphous STO thin films deposited by the PEALD process showed excellent step coverage, in excess of 97{\%}, and no interfacial layer was detected. The electrical properties of the TiN/STO/TiN capacitor structures were measured by capacitance-voltage (C-V) testing after low temperature annealing in an oxygen atmosphere at 500°C for 10 min. These conditions resulted in a product with the highest dielectric constant value (∼130).",
author = "Yim, {C. J.} and Kim, {S. U.} and Kang, {Y. S.} and Mann-Ho Cho and Ko, {Dae Hong}",
year = "2011",
month = "8",
day = "18",
doi = "10.1149/1.3609837",
language = "English",
volume = "14",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "10",

}

Enhanced electrical properties of SrTiO3 thin films grown by plasma-enhanced atomic layer deposition. / Yim, C. J.; Kim, S. U.; Kang, Y. S.; Cho, Mann-Ho; Ko, Dae Hong.

In: Electrochemical and Solid-State Letters, Vol. 14, No. 10, 18.08.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhanced electrical properties of SrTiO3 thin films grown by plasma-enhanced atomic layer deposition

AU - Yim, C. J.

AU - Kim, S. U.

AU - Kang, Y. S.

AU - Cho, Mann-Ho

AU - Ko, Dae Hong

PY - 2011/8/18

Y1 - 2011/8/18

N2 - SrTiO3 (STO) thin films were grown on a Si substrate and a TiN electrode by a plasma-enhanced atomic layer deposition (PEALD) process using oxygen plasma. The amorphous STO thin films deposited by the PEALD process showed excellent step coverage, in excess of 97%, and no interfacial layer was detected. The electrical properties of the TiN/STO/TiN capacitor structures were measured by capacitance-voltage (C-V) testing after low temperature annealing in an oxygen atmosphere at 500°C for 10 min. These conditions resulted in a product with the highest dielectric constant value (∼130).

AB - SrTiO3 (STO) thin films were grown on a Si substrate and a TiN electrode by a plasma-enhanced atomic layer deposition (PEALD) process using oxygen plasma. The amorphous STO thin films deposited by the PEALD process showed excellent step coverage, in excess of 97%, and no interfacial layer was detected. The electrical properties of the TiN/STO/TiN capacitor structures were measured by capacitance-voltage (C-V) testing after low temperature annealing in an oxygen atmosphere at 500°C for 10 min. These conditions resulted in a product with the highest dielectric constant value (∼130).

UR - http://www.scopus.com/inward/record.url?scp=80051643460&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80051643460&partnerID=8YFLogxK

U2 - 10.1149/1.3609837

DO - 10.1149/1.3609837

M3 - Article

AN - SCOPUS:80051643460

VL - 14

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 10

ER -