Enhanced electrical properties of SrTiO3 thin films grown by plasma-enhanced atomic layer deposition

C. J. Yim; S. U. Kim; Y. S. Kang; M. H. Cho; D. H. Ko

doi:10.1149/1.3609837

Enhanced electrical properties of SrTiO₃ thin films grown by plasma-enhanced atomic layer deposition

C. J. Yim, S. U. Kim, Y. S. Kang, M. H. Cho, D. H. Ko

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

SrTiO₃ (STO) thin films were grown on a Si substrate and a TiN electrode by a plasma-enhanced atomic layer deposition (PEALD) process using oxygen plasma. The amorphous STO thin films deposited by the PEALD process showed excellent step coverage, in excess of 97%, and no interfacial layer was detected. The electrical properties of the TiN/STO/TiN capacitor structures were measured by capacitance-voltage (C-V) testing after low temperature annealing in an oxygen atmosphere at 500°C for 10 min. These conditions resulted in a product with the highest dielectric constant value (∼130).

Original language	English
Pages (from-to)	G45-G48
Journal	Electrochemical and Solid-State Letters
Volume	14
Issue number	10
DOIs	https://doi.org/10.1149/1.3609837
Publication status	Published - 2011

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3609837

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@article{8ac2978cafe845728fd6a1276f0fc7e6,

title = "Enhanced electrical properties of SrTiO3 thin films grown by plasma-enhanced atomic layer deposition",

abstract = "SrTiO3 (STO) thin films were grown on a Si substrate and a TiN electrode by a plasma-enhanced atomic layer deposition (PEALD) process using oxygen plasma. The amorphous STO thin films deposited by the PEALD process showed excellent step coverage, in excess of 97%, and no interfacial layer was detected. The electrical properties of the TiN/STO/TiN capacitor structures were measured by capacitance-voltage (C-V) testing after low temperature annealing in an oxygen atmosphere at 500°C for 10 min. These conditions resulted in a product with the highest dielectric constant value (∼130).",

author = "Yim, {C. J.} and Kim, {S. U.} and Kang, {Y. S.} and Cho, {M. H.} and Ko, {D. H.}",

year = "2011",

doi = "10.1149/1.3609837",

language = "English",

volume = "14",

pages = "G45--G48",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "10",

}

TY - JOUR

T1 - Enhanced electrical properties of SrTiO3 thin films grown by plasma-enhanced atomic layer deposition

AU - Yim, C. J.

AU - Kim, S. U.

AU - Kang, Y. S.

AU - Cho, M. H.

AU - Ko, D. H.

PY - 2011

Y1 - 2011

N2 - SrTiO3 (STO) thin films were grown on a Si substrate and a TiN electrode by a plasma-enhanced atomic layer deposition (PEALD) process using oxygen plasma. The amorphous STO thin films deposited by the PEALD process showed excellent step coverage, in excess of 97%, and no interfacial layer was detected. The electrical properties of the TiN/STO/TiN capacitor structures were measured by capacitance-voltage (C-V) testing after low temperature annealing in an oxygen atmosphere at 500°C for 10 min. These conditions resulted in a product with the highest dielectric constant value (∼130).

AB - SrTiO3 (STO) thin films were grown on a Si substrate and a TiN electrode by a plasma-enhanced atomic layer deposition (PEALD) process using oxygen plasma. The amorphous STO thin films deposited by the PEALD process showed excellent step coverage, in excess of 97%, and no interfacial layer was detected. The electrical properties of the TiN/STO/TiN capacitor structures were measured by capacitance-voltage (C-V) testing after low temperature annealing in an oxygen atmosphere at 500°C for 10 min. These conditions resulted in a product with the highest dielectric constant value (∼130).

UR - http://www.scopus.com/inward/record.url?scp=80051643460&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80051643460&partnerID=8YFLogxK

U2 - 10.1149/1.3609837

DO - 10.1149/1.3609837

M3 - Article

AN - SCOPUS:80051643460

SN - 1099-0062

VL - 14

SP - G45-G48

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 10

ER -

Enhanced electrical properties of SrTiO₃ thin films grown by plasma-enhanced atomic layer deposition

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