Enhanced electrical properties of SrTiO3 thin films grown by plasma-enhanced atomic layer deposition

C. J. Yim, S. U. Kim, Y. S. Kang, M. H. Cho, D. H. Ko

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

SrTiO3 (STO) thin films were grown on a Si substrate and a TiN electrode by a plasma-enhanced atomic layer deposition (PEALD) process using oxygen plasma. The amorphous STO thin films deposited by the PEALD process showed excellent step coverage, in excess of 97%, and no interfacial layer was detected. The electrical properties of the TiN/STO/TiN capacitor structures were measured by capacitance-voltage (C-V) testing after low temperature annealing in an oxygen atmosphere at 500°C for 10 min. These conditions resulted in a product with the highest dielectric constant value (∼130).

Original languageEnglish
Pages (from-to)G45-G48
JournalElectrochemical and Solid-State Letters
Volume14
Issue number10
DOIs
Publication statusPublished - 2011 Aug 18

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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