Enhanced electrical properties of thin-film transistor with self-passivated multistacked active layers

Deuk Jong Kim, You Seung Rim, Hyun Jae Kim

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

To enhance the solution-processed thin-film transistor (TFT) performance, we proposed a TFT with self-passivated multistacked active layers (SP-MSALs). This structure exhibited self-protection in the active layer as compared with the conventional TFT structure. The self-passivation layer prevented the leakage current path at the back-channel region, thus improving the field-effect mobility (μFET) and the positive bias stress (PBS) reliability. In addition, it was very stable in the exposed environment even for 150 h. As a result, the proposed SP-MSAL TFT caused the threshold voltage shift (ΔVTH) under PBS to improve from 8.2 to 4.2 V as compared with the conventional MSAL TFTs.

Original languageEnglish
Pages (from-to)4190-4194
Number of pages5
JournalACS Applied Materials and Interfaces
Volume5
Issue number10
DOIs
Publication statusPublished - 2013 May 22

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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