Enhanced fatigue property through the control of interfacial layer in Pt/PZT/Pt structure

Jun Kyu Yang, Woo Sik Kim, Hyung-Ho Park

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Ferroelectric Pb(ZrxTi1-x)O3 PZT thin film capacitors with Pt(111)/SiO2/Si substrate were fabricated by sol-gel method. Ultrathin PZT layer containing various contents of excess Pb was adopted as an interfacial layer to investigate the role of excess Pb on the formation of interfacial region between PZT film and Pt bottom electrode. An improvement of electrical properties was observed according to the content of excess Pb in interfacial PZT layer due to the inhibition of inter-diffusion at film-substrate interface as well as defect formation. The formation of Ti-rich PZT at the initial stage of anneal due to excess Pb was responsible for the excellent ferroelectric characteristic. This implied that the role of excess Pb in film-substrate interface was of significance to the long-term reliability.

Original languageEnglish
Pages (from-to)7000-7002
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number12 B
Publication statusPublished - 2000 Dec 1

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Fatigue of materials
Ferroelectric materials
Substrates
Interdiffusion (solids)
Sol-gel process
capacitors
Electric properties
electrical properties
gels
Defects
Electrodes
electrodes
defects
thin films
Film capacitor

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "Ferroelectric Pb(ZrxTi1-x)O3 PZT thin film capacitors with Pt(111)/SiO2/Si substrate were fabricated by sol-gel method. Ultrathin PZT layer containing various contents of excess Pb was adopted as an interfacial layer to investigate the role of excess Pb on the formation of interfacial region between PZT film and Pt bottom electrode. An improvement of electrical properties was observed according to the content of excess Pb in interfacial PZT layer due to the inhibition of inter-diffusion at film-substrate interface as well as defect formation. The formation of Ti-rich PZT at the initial stage of anneal due to excess Pb was responsible for the excellent ferroelectric characteristic. This implied that the role of excess Pb in film-substrate interface was of significance to the long-term reliability.",
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Enhanced fatigue property through the control of interfacial layer in Pt/PZT/Pt structure. / Yang, Jun Kyu; Kim, Woo Sik; Park, Hyung-Ho.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 39, No. 12 B, 01.12.2000, p. 7000-7002.

Research output: Contribution to journalArticle

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AU - Kim, Woo Sik

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N2 - Ferroelectric Pb(ZrxTi1-x)O3 PZT thin film capacitors with Pt(111)/SiO2/Si substrate were fabricated by sol-gel method. Ultrathin PZT layer containing various contents of excess Pb was adopted as an interfacial layer to investigate the role of excess Pb on the formation of interfacial region between PZT film and Pt bottom electrode. An improvement of electrical properties was observed according to the content of excess Pb in interfacial PZT layer due to the inhibition of inter-diffusion at film-substrate interface as well as defect formation. The formation of Ti-rich PZT at the initial stage of anneal due to excess Pb was responsible for the excellent ferroelectric characteristic. This implied that the role of excess Pb in film-substrate interface was of significance to the long-term reliability.

AB - Ferroelectric Pb(ZrxTi1-x)O3 PZT thin film capacitors with Pt(111)/SiO2/Si substrate were fabricated by sol-gel method. Ultrathin PZT layer containing various contents of excess Pb was adopted as an interfacial layer to investigate the role of excess Pb on the formation of interfacial region between PZT film and Pt bottom electrode. An improvement of electrical properties was observed according to the content of excess Pb in interfacial PZT layer due to the inhibition of inter-diffusion at film-substrate interface as well as defect formation. The formation of Ti-rich PZT at the initial stage of anneal due to excess Pb was responsible for the excellent ferroelectric characteristic. This implied that the role of excess Pb in film-substrate interface was of significance to the long-term reliability.

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