Abstract
Improving the fracture resistance of inorganic thin films is one of the key challenges in flexible electronic devices. A nonconventional in situ sputtering method is introduced to induce residual compressive stress in ZnO:Al thin films during deposition on a bent polymer substrate. The films grown under a larger prebending strain resulted in a higher fracture resistance to applied strains by exhibiting a ∼ 70% improvement in crack-initiating critical strain compared with the reference sample grown without bending. This significant improvement is attributed to the induced residual stress, which helps to prevent the formation of cracks by counteracting the applied strain.
| Original language | English |
|---|---|
| Pages (from-to) | 17569-17572 |
| Number of pages | 4 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 7 |
| Issue number | 32 |
| DOIs | |
| Publication status | Published - 2015 Aug 19 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
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Enhanced Fracture Resistance of Flexible ZnO:Al Thin Films in Situ Sputtered on Bent Polymer Substrates. / Choi, Hong Rak; Eswaran, Senthil Kumar; Lee, Seung Min; Cho, Yong Soo.
In: ACS Applied Materials and Interfaces, Vol. 7, No. 32, 19.08.2015, p. 17569-17572.Research output: Contribution to journal › Article
TY - JOUR
T1 - Enhanced Fracture Resistance of Flexible ZnO:Al Thin Films in Situ Sputtered on Bent Polymer Substrates
AU - Choi, Hong Rak
AU - Eswaran, Senthil Kumar
AU - Lee, Seung Min
AU - Cho, Yong Soo
PY - 2015/8/19
Y1 - 2015/8/19
N2 - Improving the fracture resistance of inorganic thin films is one of the key challenges in flexible electronic devices. A nonconventional in situ sputtering method is introduced to induce residual compressive stress in ZnO:Al thin films during deposition on a bent polymer substrate. The films grown under a larger prebending strain resulted in a higher fracture resistance to applied strains by exhibiting a ∼ 70% improvement in crack-initiating critical strain compared with the reference sample grown without bending. This significant improvement is attributed to the induced residual stress, which helps to prevent the formation of cracks by counteracting the applied strain.
AB - Improving the fracture resistance of inorganic thin films is one of the key challenges in flexible electronic devices. A nonconventional in situ sputtering method is introduced to induce residual compressive stress in ZnO:Al thin films during deposition on a bent polymer substrate. The films grown under a larger prebending strain resulted in a higher fracture resistance to applied strains by exhibiting a ∼ 70% improvement in crack-initiating critical strain compared with the reference sample grown without bending. This significant improvement is attributed to the induced residual stress, which helps to prevent the formation of cracks by counteracting the applied strain.
UR - http://www.scopus.com/inward/record.url?scp=84939826266&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84939826266&partnerID=8YFLogxK
U2 - 10.1021/acsami.5b04727
DO - 10.1021/acsami.5b04727
M3 - Article
AN - SCOPUS:84939826266
VL - 7
SP - 17569
EP - 17572
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 32
ER -