Enhanced Hall voltage in a gate-controlled InSb Hall device

W. Y. Kim, Joonyeon Chang, S. H. Han, W. Y. Lee, S. G. Chang

Research output: Contribution to journalArticle

64 Citations (Scopus)


We present an enhanced Hall voltage from the gate-controlled Hall device incorporating a micron-scaled InSb semiconductor cross junction and a single ferromagnetic element. Magnetic fringe field at an edge of the ferrogmanetic element gives rise to the Hall voltage, which shows hysteretic behavior upon magnetic-field sweep. The Hall effect is amplified by a factor of ~40% when a gate voltage of -25 V is applied. The increase is largely attributed to the reduction of carrier density affected by the gate confinement effect. The InSb Hall device controlled by gate voltage demonstrates a possible application for active nonvolatile memory cells and logic gate.

Original languageEnglish
Article number10D507
JournalJournal of Applied Physics
Issue number10
Publication statusPublished - 2005 May 15

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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