Enhanced Hall voltage in a gate-controlled InSb Hall device

W. Y. Kim, Joonyeon Chang, S. H. Han, W. Y. Lee, S. G. Chang

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

We present an enhanced Hall voltage from the gate-controlled Hall device incorporating a micron-scaled InSb semiconductor cross junction and a single ferromagnetic element. Magnetic fringe field at an edge of the ferrogmanetic element gives rise to the Hall voltage, which shows hysteretic behavior upon magnetic-field sweep. The Hall effect is amplified by a factor of ~40% when a gate voltage of -25 V is applied. The increase is largely attributed to the reduction of carrier density affected by the gate confinement effect. The InSb Hall device controlled by gate voltage demonstrates a possible application for active nonvolatile memory cells and logic gate.

Original languageEnglish
Article number10D507
JournalJournal of Applied Physics
Volume97
Issue number10
DOIs
Publication statusPublished - 2005 May 15

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electric potential
logic
Hall effect
cells
magnetic fields

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, W. Y. ; Chang, Joonyeon ; Han, S. H. ; Lee, W. Y. ; Chang, S. G. / Enhanced Hall voltage in a gate-controlled InSb Hall device. In: Journal of Applied Physics. 2005 ; Vol. 97, No. 10.
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Enhanced Hall voltage in a gate-controlled InSb Hall device. / Kim, W. Y.; Chang, Joonyeon; Han, S. H.; Lee, W. Y.; Chang, S. G.

In: Journal of Applied Physics, Vol. 97, No. 10, 10D507, 15.05.2005.

Research output: Contribution to journalArticle

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