Enhanced High-Temperature Electrical Resistivity of Aluminum Nitride Obtained by Engineering a Schottky Barrier at Grain Boundaries

Eunsil Lee; Jae Hwan Pee; Sung Min Lee; Jong Young Kim; Wooyoung Shim

doi:10.3938/jkps.77.673

Enhanced High-Temperature Electrical Resistivity of Aluminum Nitride Obtained by Engineering a Schottky Barrier at Grain Boundaries

Eunsil Lee, Jae Hwan Pee, Sung Min Lee, Jong Young Kim, Wooyoung Shim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

An enhanced high-temperature electrical resistivity of AlN at high voltage was obtained by using MgO doping to modulate the Schottky barrier. Doped MgO was precipitated in an ∼100-nm-thick layer near grain boundaries, which reduced not only anionic carriers, but also the carrier mobility, due to the formation of defects (Mg′_Al, O^·_N). According to an impedance analysis, the activation energy and the resistivity due to grain boundaries were increased by MgO doping, suggesting an elevated Schottky barrier. As a result, a remarkable high-voltage electrical resistivity, which is greater than 10¹⁰ Ω·cm at 550 °C/100 V, can be achieved, which is valuable for electrostatic chucking devices.

Original language	English
Pages (from-to)	673-679
Number of pages	7
Journal	Journal of the Korean Physical Society
Volume	77
Issue number	8
DOIs	https://doi.org/10.3938/jkps.77.673
Publication status	Published - 2020 Oct 1

Bibliographical note

Funding Information:
This research was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Government (2018M3D1A1058793) and by the Ministry of Trade, Industry, and Energy (10053585).

Publisher Copyright:
© 2020, The Korean Physical Society.

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.3938/jkps.77.673

Cite this

@article{7b236bc7a8254acc8d2f831df11d0aff,

title = "Enhanced High-Temperature Electrical Resistivity of Aluminum Nitride Obtained by Engineering a Schottky Barrier at Grain Boundaries",

abstract = "An enhanced high-temperature electrical resistivity of AlN at high voltage was obtained by using MgO doping to modulate the Schottky barrier. Doped MgO was precipitated in an ∼100-nm-thick layer near grain boundaries, which reduced not only anionic carriers, but also the carrier mobility, due to the formation of defects (Mg′Al, O·N). According to an impedance analysis, the activation energy and the resistivity due to grain boundaries were increased by MgO doping, suggesting an elevated Schottky barrier. As a result, a remarkable high-voltage electrical resistivity, which is greater than 1010 Ω·cm at 550 °C/100 V, can be achieved, which is valuable for electrostatic chucking devices.",

author = "Eunsil Lee and Pee, {Jae Hwan} and Lee, {Sung Min} and Kim, {Jong Young} and Wooyoung Shim",

note = "Funding Information: This research was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Government (2018M3D1A1058793) and by the Ministry of Trade, Industry, and Energy (10053585). Publisher Copyright: {\textcopyright} 2020, The Korean Physical Society.",

year = "2020",

month = oct,

day = "1",

doi = "10.3938/jkps.77.673",

language = "English",

volume = "77",

pages = "673--679",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "8",

}

TY - JOUR

T1 - Enhanced High-Temperature Electrical Resistivity of Aluminum Nitride Obtained by Engineering a Schottky Barrier at Grain Boundaries

AU - Lee, Eunsil

AU - Pee, Jae Hwan

AU - Lee, Sung Min

AU - Kim, Jong Young

AU - Shim, Wooyoung

N1 - Funding Information: This research was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean Government (2018M3D1A1058793) and by the Ministry of Trade, Industry, and Energy (10053585). Publisher Copyright: © 2020, The Korean Physical Society.

PY - 2020/10/1

Y1 - 2020/10/1

N2 - An enhanced high-temperature electrical resistivity of AlN at high voltage was obtained by using MgO doping to modulate the Schottky barrier. Doped MgO was precipitated in an ∼100-nm-thick layer near grain boundaries, which reduced not only anionic carriers, but also the carrier mobility, due to the formation of defects (Mg′Al, O·N). According to an impedance analysis, the activation energy and the resistivity due to grain boundaries were increased by MgO doping, suggesting an elevated Schottky barrier. As a result, a remarkable high-voltage electrical resistivity, which is greater than 1010 Ω·cm at 550 °C/100 V, can be achieved, which is valuable for electrostatic chucking devices.

AB - An enhanced high-temperature electrical resistivity of AlN at high voltage was obtained by using MgO doping to modulate the Schottky barrier. Doped MgO was precipitated in an ∼100-nm-thick layer near grain boundaries, which reduced not only anionic carriers, but also the carrier mobility, due to the formation of defects (Mg′Al, O·N). According to an impedance analysis, the activation energy and the resistivity due to grain boundaries were increased by MgO doping, suggesting an elevated Schottky barrier. As a result, a remarkable high-voltage electrical resistivity, which is greater than 1010 Ω·cm at 550 °C/100 V, can be achieved, which is valuable for electrostatic chucking devices.

UR - http://www.scopus.com/inward/record.url?scp=85094198432&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85094198432&partnerID=8YFLogxK

U2 - 10.3938/jkps.77.673

DO - 10.3938/jkps.77.673

M3 - Article

AN - SCOPUS:85094198432

SN - 0374-4884

VL - 77

SP - 673

EP - 679

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 8

ER -

Enhanced High-Temperature Electrical Resistivity of Aluminum Nitride Obtained by Engineering a Schottky Barrier at Grain Boundaries

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this