Enhanced Light Extraction from p-Si Nanowires/n-IGZO Heterojunction LED by Using Oxide-Metal-Oxide Structured Transparent Electrodes

Yun Cheol Kim, Su Jeong Lee, Jae Min Myoung

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Heterojunction light-emitting diodes (LEDs) comprising p-type Si nanowires (p-Si NWs) and n-type indium gallium zinc oxide (n-IGZO) were fabricated with the different top electrode materials: Al, indium zinc oxide (IZO), and IZO/Ag/IZO oxide-metal-oxide (OMO) multilayer. All the LEDs exhibited typical rectifying behaviors of the p-n junction. Moreover, broad light-emission spectra in the visible range were observed because of the quantum confinement effect (QCE) of the Si NW and Si nanocrystals/nonstoichiometric Si oxide (SiOx) (x < 2) interfaces. In comparison to the LEDs with Al and single IZO electrode, the LED with the OMO multilayer electrode exhibited an enhanced optical performance because the OMO multilayer had an excellent transmittance of 87.7% in the visible range with a low sheet resistance of 5.65 Ω/sq. Furthermore, by investigating the transmittance spectra of the single IZO and OMO multilayer electrodes as a function of the light incidence angle, the OMO multilayer electrode is confirmed to be more suitable for white light emission from p-Si NWs/n-IGZO heterojunction LED.

Original languageEnglish
Pages (from-to)6788-6795
Number of pages8
JournalJournal of Physical Chemistry C
Volume121
Issue number12
DOIs
Publication statusPublished - 2017 Mar 30

Fingerprint

Zinc Oxide
gallium oxides
Gallium
Indium
Zinc oxide
zinc oxides
Oxides
Nanowires
Light emitting diodes
metal oxides
indium
Heterojunctions
heterojunctions
nanowires
light emitting diodes
Metals
indium oxides
Electrodes
electrodes
oxides

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

Cite this

@article{547511727ec749f9aeec762cacb69c4d,
title = "Enhanced Light Extraction from p-Si Nanowires/n-IGZO Heterojunction LED by Using Oxide-Metal-Oxide Structured Transparent Electrodes",
abstract = "Heterojunction light-emitting diodes (LEDs) comprising p-type Si nanowires (p-Si NWs) and n-type indium gallium zinc oxide (n-IGZO) were fabricated with the different top electrode materials: Al, indium zinc oxide (IZO), and IZO/Ag/IZO oxide-metal-oxide (OMO) multilayer. All the LEDs exhibited typical rectifying behaviors of the p-n junction. Moreover, broad light-emission spectra in the visible range were observed because of the quantum confinement effect (QCE) of the Si NW and Si nanocrystals/nonstoichiometric Si oxide (SiOx) (x < 2) interfaces. In comparison to the LEDs with Al and single IZO electrode, the LED with the OMO multilayer electrode exhibited an enhanced optical performance because the OMO multilayer had an excellent transmittance of 87.7{\%} in the visible range with a low sheet resistance of 5.65 Ω/sq. Furthermore, by investigating the transmittance spectra of the single IZO and OMO multilayer electrodes as a function of the light incidence angle, the OMO multilayer electrode is confirmed to be more suitable for white light emission from p-Si NWs/n-IGZO heterojunction LED.",
author = "Kim, {Yun Cheol} and Lee, {Su Jeong} and Myoung, {Jae Min}",
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Enhanced Light Extraction from p-Si Nanowires/n-IGZO Heterojunction LED by Using Oxide-Metal-Oxide Structured Transparent Electrodes. / Kim, Yun Cheol; Lee, Su Jeong; Myoung, Jae Min.

In: Journal of Physical Chemistry C, Vol. 121, No. 12, 30.03.2017, p. 6788-6795.

Research output: Contribution to journalArticle

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T1 - Enhanced Light Extraction from p-Si Nanowires/n-IGZO Heterojunction LED by Using Oxide-Metal-Oxide Structured Transparent Electrodes

AU - Kim, Yun Cheol

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PY - 2017/3/30

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N2 - Heterojunction light-emitting diodes (LEDs) comprising p-type Si nanowires (p-Si NWs) and n-type indium gallium zinc oxide (n-IGZO) were fabricated with the different top electrode materials: Al, indium zinc oxide (IZO), and IZO/Ag/IZO oxide-metal-oxide (OMO) multilayer. All the LEDs exhibited typical rectifying behaviors of the p-n junction. Moreover, broad light-emission spectra in the visible range were observed because of the quantum confinement effect (QCE) of the Si NW and Si nanocrystals/nonstoichiometric Si oxide (SiOx) (x < 2) interfaces. In comparison to the LEDs with Al and single IZO electrode, the LED with the OMO multilayer electrode exhibited an enhanced optical performance because the OMO multilayer had an excellent transmittance of 87.7% in the visible range with a low sheet resistance of 5.65 Ω/sq. Furthermore, by investigating the transmittance spectra of the single IZO and OMO multilayer electrodes as a function of the light incidence angle, the OMO multilayer electrode is confirmed to be more suitable for white light emission from p-Si NWs/n-IGZO heterojunction LED.

AB - Heterojunction light-emitting diodes (LEDs) comprising p-type Si nanowires (p-Si NWs) and n-type indium gallium zinc oxide (n-IGZO) were fabricated with the different top electrode materials: Al, indium zinc oxide (IZO), and IZO/Ag/IZO oxide-metal-oxide (OMO) multilayer. All the LEDs exhibited typical rectifying behaviors of the p-n junction. Moreover, broad light-emission spectra in the visible range were observed because of the quantum confinement effect (QCE) of the Si NW and Si nanocrystals/nonstoichiometric Si oxide (SiOx) (x < 2) interfaces. In comparison to the LEDs with Al and single IZO electrode, the LED with the OMO multilayer electrode exhibited an enhanced optical performance because the OMO multilayer had an excellent transmittance of 87.7% in the visible range with a low sheet resistance of 5.65 Ω/sq. Furthermore, by investigating the transmittance spectra of the single IZO and OMO multilayer electrodes as a function of the light incidence angle, the OMO multilayer electrode is confirmed to be more suitable for white light emission from p-Si NWs/n-IGZO heterojunction LED.

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