Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y 2 O 3 with Ozone

Hanearl Jung, Woo Hee Kim, Bo Eun Park, Whang Je Woo, Il Kwon Oh, Su Jeong Lee, Yun Cheol Kim, Jae Min Myoung, Satoko Gatineau, Christian Dussarrat, Hyungjun Kim

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We report the effect of Y 2 O 3 passivation by atomic layer deposition (ALD) using various oxidants, such as H 2 O, O 2 plasma, and O 3 , on In-Ga-Zn-O thin-film transistors (IGZO TFTs). A large negative shift in the threshold voltage (V th ) was observed in the case of the TFT subjected to the H 2 O-ALD Y 2 O 3 process; this shift was caused by a donor effect of negatively charged chemisorbed H 2 O molecules. In addition, degradation of the IGZO TFT device performance after the O 2 plasma-ALD Y 2 O 3 process (field-effect mobility (μ) = 8.7 cm 2 /(V·s), subthreshold swing (SS) = 0.77 V/dec, and V th = 3.7 V) was observed, which was attributed to plasma damage on the IGZO surface adversely affecting the stability of the TFT under light illumination. In contrast, the O 3 -ALD Y 2 O 3 process led to enhanced device stability under light illumination (ΔV th = -1 V after 3 h of illumination) by passivating the subgap defect states in the IGZO surface region. In addition, TFTs with a thicker IGZO film (55 nm, which was the optimum thickness under the current investigation) showed more stable device performance than TFTs with a thinner IGZO film (30 nm) (ΔV th = -0.4 V after 3 h of light illumination) by triggering the recombination of holes diffusing from the IGZO surface to the insulator-channel interface. Therefore, we envisioned that the O 3 -ALD Y 2 O 3 passivation layer suggested in this paper can improve the photostability of TFTs under light illumination.

Original languageEnglish
Pages (from-to)2143-2150
Number of pages8
JournalACS Applied Materials and Interfaces
Volume10
Issue number2
DOIs
Publication statusPublished - 2018 Jan 17

Fingerprint

Atomic layer deposition
Ozone
Thin film transistors
Lighting
Passivation
Plasmas
Plasma deposition
Threshold voltage
Oxidants
Thick films
Degradation
Thin films
Defects
Molecules

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Jung, Hanearl ; Kim, Woo Hee ; Park, Bo Eun ; Woo, Whang Je ; Oh, Il Kwon ; Lee, Su Jeong ; Kim, Yun Cheol ; Myoung, Jae Min ; Gatineau, Satoko ; Dussarrat, Christian ; Kim, Hyungjun. / Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y 2 O 3 with Ozone In: ACS Applied Materials and Interfaces. 2018 ; Vol. 10, No. 2. pp. 2143-2150.
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abstract = "We report the effect of Y 2 O 3 passivation by atomic layer deposition (ALD) using various oxidants, such as H 2 O, O 2 plasma, and O 3 , on In-Ga-Zn-O thin-film transistors (IGZO TFTs). A large negative shift in the threshold voltage (V th ) was observed in the case of the TFT subjected to the H 2 O-ALD Y 2 O 3 process; this shift was caused by a donor effect of negatively charged chemisorbed H 2 O molecules. In addition, degradation of the IGZO TFT device performance after the O 2 plasma-ALD Y 2 O 3 process (field-effect mobility (μ) = 8.7 cm 2 /(V·s), subthreshold swing (SS) = 0.77 V/dec, and V th = 3.7 V) was observed, which was attributed to plasma damage on the IGZO surface adversely affecting the stability of the TFT under light illumination. In contrast, the O 3 -ALD Y 2 O 3 process led to enhanced device stability under light illumination (ΔV th = -1 V after 3 h of illumination) by passivating the subgap defect states in the IGZO surface region. In addition, TFTs with a thicker IGZO film (55 nm, which was the optimum thickness under the current investigation) showed more stable device performance than TFTs with a thinner IGZO film (30 nm) (ΔV th = -0.4 V after 3 h of light illumination) by triggering the recombination of holes diffusing from the IGZO surface to the insulator-channel interface. Therefore, we envisioned that the O 3 -ALD Y 2 O 3 passivation layer suggested in this paper can improve the photostability of TFTs under light illumination.",
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Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y 2 O 3 with Ozone . / Jung, Hanearl; Kim, Woo Hee; Park, Bo Eun; Woo, Whang Je; Oh, Il Kwon; Lee, Su Jeong; Kim, Yun Cheol; Myoung, Jae Min; Gatineau, Satoko; Dussarrat, Christian; Kim, Hyungjun.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 2, 17.01.2018, p. 2143-2150.

Research output: Contribution to journalArticle

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T1 - Enhanced Light Stability of InGaZnO Thin-Film Transistors by Atomic-Layer-Deposited Y 2 O 3 with Ozone

AU - Jung, Hanearl

AU - Kim, Woo Hee

AU - Park, Bo Eun

AU - Woo, Whang Je

AU - Oh, Il Kwon

AU - Lee, Su Jeong

AU - Kim, Yun Cheol

AU - Myoung, Jae Min

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AU - Dussarrat, Christian

AU - Kim, Hyungjun

PY - 2018/1/17

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N2 - We report the effect of Y 2 O 3 passivation by atomic layer deposition (ALD) using various oxidants, such as H 2 O, O 2 plasma, and O 3 , on In-Ga-Zn-O thin-film transistors (IGZO TFTs). A large negative shift in the threshold voltage (V th ) was observed in the case of the TFT subjected to the H 2 O-ALD Y 2 O 3 process; this shift was caused by a donor effect of negatively charged chemisorbed H 2 O molecules. In addition, degradation of the IGZO TFT device performance after the O 2 plasma-ALD Y 2 O 3 process (field-effect mobility (μ) = 8.7 cm 2 /(V·s), subthreshold swing (SS) = 0.77 V/dec, and V th = 3.7 V) was observed, which was attributed to plasma damage on the IGZO surface adversely affecting the stability of the TFT under light illumination. In contrast, the O 3 -ALD Y 2 O 3 process led to enhanced device stability under light illumination (ΔV th = -1 V after 3 h of illumination) by passivating the subgap defect states in the IGZO surface region. In addition, TFTs with a thicker IGZO film (55 nm, which was the optimum thickness under the current investigation) showed more stable device performance than TFTs with a thinner IGZO film (30 nm) (ΔV th = -0.4 V after 3 h of light illumination) by triggering the recombination of holes diffusing from the IGZO surface to the insulator-channel interface. Therefore, we envisioned that the O 3 -ALD Y 2 O 3 passivation layer suggested in this paper can improve the photostability of TFTs under light illumination.

AB - We report the effect of Y 2 O 3 passivation by atomic layer deposition (ALD) using various oxidants, such as H 2 O, O 2 plasma, and O 3 , on In-Ga-Zn-O thin-film transistors (IGZO TFTs). A large negative shift in the threshold voltage (V th ) was observed in the case of the TFT subjected to the H 2 O-ALD Y 2 O 3 process; this shift was caused by a donor effect of negatively charged chemisorbed H 2 O molecules. In addition, degradation of the IGZO TFT device performance after the O 2 plasma-ALD Y 2 O 3 process (field-effect mobility (μ) = 8.7 cm 2 /(V·s), subthreshold swing (SS) = 0.77 V/dec, and V th = 3.7 V) was observed, which was attributed to plasma damage on the IGZO surface adversely affecting the stability of the TFT under light illumination. In contrast, the O 3 -ALD Y 2 O 3 process led to enhanced device stability under light illumination (ΔV th = -1 V after 3 h of illumination) by passivating the subgap defect states in the IGZO surface region. In addition, TFTs with a thicker IGZO film (55 nm, which was the optimum thickness under the current investigation) showed more stable device performance than TFTs with a thinner IGZO film (30 nm) (ΔV th = -0.4 V after 3 h of light illumination) by triggering the recombination of holes diffusing from the IGZO surface to the insulator-channel interface. Therefore, we envisioned that the O 3 -ALD Y 2 O 3 passivation layer suggested in this paper can improve the photostability of TFTs under light illumination.

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