Enhanced mobility of rubrene thin-film transistors with a polymer dielectric on plastic substrate

S. H. Jeong, Jeong M. Choi, D. K. Hwang, Se W. Park, Seongil Im

Research output: Contribution to journalArticle

10 Citations (Scopus)


We report on the fabrication of rubrene thin-film transistors (TFTs) with spin-coated poly-4-vinylphenol (PVP) dielectric on indium-tin oxide/plastic substrate. Under a specific growth condition of 80°C in situ vacuum anneal following thermal deposition, initial amorphous rubrene film was successfully transformed into crystalline phase, both on hydrophobic PVP and on Si O2 p+ -Si substrate, whose surface is relatively hydrophilic. The transformation or growth kinetics of the crystalline rubrene domain was much faster on PVP than on the Si O2 gate dielectric. As a result, the rubrene TFT with PVP dielectric exhibited an order of magnitude higher field mobility (∼6× 10-3 cm2 V s) than that of the other one with Si O2 dielectric.

Original languageEnglish
Pages (from-to)321-323
Number of pages3
JournalElectrochemical and Solid-State Letters
Issue number11
Publication statusPublished - 2007 Sep 13


All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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