Enhanced mobility of rubrene thin-film transistors with a polymer dielectric on plastic substrate

S. H. Jeong, Jeong M. Choi, D. K. Hwang, Se W. Park, Seongil Im

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report on the fabrication of rubrene thin-film transistors (TFTs) with spin-coated poly-4-vinylphenol (PVP) dielectric on indium-tin oxide/plastic substrate. Under a specific growth condition of 80°C in situ vacuum anneal following thermal deposition, initial amorphous rubrene film was successfully transformed into crystalline phase, both on hydrophobic PVP and on Si O2 p+ -Si substrate, whose surface is relatively hydrophilic. The transformation or growth kinetics of the crystalline rubrene domain was much faster on PVP than on the Si O2 gate dielectric. As a result, the rubrene TFT with PVP dielectric exhibited an order of magnitude higher field mobility (∼6× 10-3 cm2 V s) than that of the other one with Si O2 dielectric.

Original languageEnglish
Pages (from-to)321-323
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume10
Issue number11
DOIs
Publication statusPublished - 2007 Sep 13

Fingerprint

Thin film transistors
Polymers
transistors
plastics
Plastics
polymers
Substrates
thin films
Crystalline materials
Gate dielectrics
Growth kinetics
Amorphous films
Tin oxides
Indium
Vacuum
indium oxides
tin oxides
Fabrication
vacuum
fabrication

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Jeong, S. H. ; Choi, Jeong M. ; Hwang, D. K. ; Park, Se W. ; Im, Seongil. / Enhanced mobility of rubrene thin-film transistors with a polymer dielectric on plastic substrate. In: Electrochemical and Solid-State Letters. 2007 ; Vol. 10, No. 11. pp. 321-323.
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Enhanced mobility of rubrene thin-film transistors with a polymer dielectric on plastic substrate. / Jeong, S. H.; Choi, Jeong M.; Hwang, D. K.; Park, Se W.; Im, Seongil.

In: Electrochemical and Solid-State Letters, Vol. 10, No. 11, 13.09.2007, p. 321-323.

Research output: Contribution to journalArticle

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T1 - Enhanced mobility of rubrene thin-film transistors with a polymer dielectric on plastic substrate

AU - Jeong, S. H.

AU - Choi, Jeong M.

AU - Hwang, D. K.

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AB - We report on the fabrication of rubrene thin-film transistors (TFTs) with spin-coated poly-4-vinylphenol (PVP) dielectric on indium-tin oxide/plastic substrate. Under a specific growth condition of 80°C in situ vacuum anneal following thermal deposition, initial amorphous rubrene film was successfully transformed into crystalline phase, both on hydrophobic PVP and on Si O2 p+ -Si substrate, whose surface is relatively hydrophilic. The transformation or growth kinetics of the crystalline rubrene domain was much faster on PVP than on the Si O2 gate dielectric. As a result, the rubrene TFT with PVP dielectric exhibited an order of magnitude higher field mobility (∼6× 10-3 cm2 V s) than that of the other one with Si O2 dielectric.

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