Enhanced performance of solution-processed amorphous gallium-doped indium oxide thin-film transistors after hydrogen peroxide vapor treatment

Jee Ho Park, Young Bum Yoo, Jin Young Oh, Ji Hoon Lee, Tae Il Lee, Hong Koo Baik

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We fabricated solution-processed gallium-doped indium oxide (GIO) thin-film transistors (TFTs) and performed hydrogen peroxide (H2O2) vapor treatment at 350 °C. We demonstrated that H2O and H 2O2 vapor treatment enhanced the performance of the GIO TFTs. The GIO TFT only annealed in ambient air at 350 °C performed very poorly, whereas those annealed in air with H2O2 and H 2O vapor at 350 °C exhibited significantly improved electrical performance. In particular, the H2O2-vapor-treated GIO TFTs had a mobility of 3.22 cm2V-1 s-1. We believe that this method can help decrease the annealing temperature in order to obtain high-performance GIO TFTs.

Original languageEnglish
Article number051101
JournalApplied Physics Express
Volume7
Issue number5
DOIs
Publication statusPublished - 2014 Jan 1

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Gallium
Thin film transistors
hydrogen peroxide
Hydrogen peroxide
indium oxides
Indium
Oxide films
gallium
transistors
Vapors
vapors
thin films
air
Air
Annealing
annealing
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Enhanced performance of solution-processed amorphous gallium-doped indium oxide thin-film transistors after hydrogen peroxide vapor treatment",
abstract = "We fabricated solution-processed gallium-doped indium oxide (GIO) thin-film transistors (TFTs) and performed hydrogen peroxide (H2O2) vapor treatment at 350 °C. We demonstrated that H2O and H 2O2 vapor treatment enhanced the performance of the GIO TFTs. The GIO TFT only annealed in ambient air at 350 °C performed very poorly, whereas those annealed in air with H2O2 and H 2O vapor at 350 °C exhibited significantly improved electrical performance. In particular, the H2O2-vapor-treated GIO TFTs had a mobility of 3.22 cm2V-1 s-1. We believe that this method can help decrease the annealing temperature in order to obtain high-performance GIO TFTs.",
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Enhanced performance of solution-processed amorphous gallium-doped indium oxide thin-film transistors after hydrogen peroxide vapor treatment. / Park, Jee Ho; Yoo, Young Bum; Oh, Jin Young; Lee, Ji Hoon; Lee, Tae Il; Baik, Hong Koo.

In: Applied Physics Express, Vol. 7, No. 5, 051101, 01.01.2014.

Research output: Contribution to journalArticle

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AU - Baik, Hong Koo

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