Abstract
Solution-processed, amorphous lithium-doped YInZnO (L-YIZO) thin-film transistors (TFTs) are investigated. An appropriate amount of Li doping significantly enhances the field-effect mobility in TFT performance (∼15 times greater than that of nondoped YIZO) without controlled annealing under water vapor or O 3/O 2 environments. The addition of Li into solution-processed YIZO semiconductors leads to improved film quality, which results from enriched metal oxygen bonding and reduced defect sites, such as oxygen vacancies and hydroxyl groups. Li doping of an amorphous ionic oxide semiconductor (AIOS) could serve as an effective strategy for low-temperature and high-performance solution-processed AIOS TFTs.
| Original language | English |
|---|---|
| Pages (from-to) | 1456-1461 |
| Number of pages | 6 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 4 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2012 Mar 28 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
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Enhanced performance of solution-processed amorphous LiYInZnO thin-film transistors. / Koo, Chang Young; Song, Keunkyu; Jung, Yangho; Yang, Wooseok; Kim, Seung Hyun; Jeong, Sunho; Moon, Jooho.
In: ACS Applied Materials and Interfaces, Vol. 4, No. 3, 28.03.2012, p. 1456-1461.Research output: Contribution to journal › Article
TY - JOUR
T1 - Enhanced performance of solution-processed amorphous LiYInZnO thin-film transistors
AU - Koo, Chang Young
AU - Song, Keunkyu
AU - Jung, Yangho
AU - Yang, Wooseok
AU - Kim, Seung Hyun
AU - Jeong, Sunho
AU - Moon, Jooho
PY - 2012/3/28
Y1 - 2012/3/28
N2 - Solution-processed, amorphous lithium-doped YInZnO (L-YIZO) thin-film transistors (TFTs) are investigated. An appropriate amount of Li doping significantly enhances the field-effect mobility in TFT performance (∼15 times greater than that of nondoped YIZO) without controlled annealing under water vapor or O 3/O 2 environments. The addition of Li into solution-processed YIZO semiconductors leads to improved film quality, which results from enriched metal oxygen bonding and reduced defect sites, such as oxygen vacancies and hydroxyl groups. Li doping of an amorphous ionic oxide semiconductor (AIOS) could serve as an effective strategy for low-temperature and high-performance solution-processed AIOS TFTs.
AB - Solution-processed, amorphous lithium-doped YInZnO (L-YIZO) thin-film transistors (TFTs) are investigated. An appropriate amount of Li doping significantly enhances the field-effect mobility in TFT performance (∼15 times greater than that of nondoped YIZO) without controlled annealing under water vapor or O 3/O 2 environments. The addition of Li into solution-processed YIZO semiconductors leads to improved film quality, which results from enriched metal oxygen bonding and reduced defect sites, such as oxygen vacancies and hydroxyl groups. Li doping of an amorphous ionic oxide semiconductor (AIOS) could serve as an effective strategy for low-temperature and high-performance solution-processed AIOS TFTs.
UR - http://www.scopus.com/inward/record.url?scp=84859112252&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84859112252&partnerID=8YFLogxK
U2 - 10.1021/am201701v
DO - 10.1021/am201701v
M3 - Article
C2 - 22311703
AN - SCOPUS:84859112252
VL - 4
SP - 1456
EP - 1461
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 3
ER -