Enhanced performance of solution-processed amorphous LiYInZnO thin-film transistors

Chang Young Koo, Keunkyu Song, Yangho Jung, Wooseok Yang, Seung Hyun Kim, Sunho Jeong, Jooho Moon

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Solution-processed, amorphous lithium-doped YInZnO (L-YIZO) thin-film transistors (TFTs) are investigated. An appropriate amount of Li doping significantly enhances the field-effect mobility in TFT performance (∼15 times greater than that of nondoped YIZO) without controlled annealing under water vapor or O 3/O 2 environments. The addition of Li into solution-processed YIZO semiconductors leads to improved film quality, which results from enriched metal oxygen bonding and reduced defect sites, such as oxygen vacancies and hydroxyl groups. Li doping of an amorphous ionic oxide semiconductor (AIOS) could serve as an effective strategy for low-temperature and high-performance solution-processed AIOS TFTs.

Original languageEnglish
Pages (from-to)1456-1461
Number of pages6
JournalACS Applied Materials and Interfaces
Volume4
Issue number3
DOIs
Publication statusPublished - 2012 Mar 28

Fingerprint

Amorphous films
Thin film transistors
Doping (additives)
Steam
Oxygen vacancies
Lithium
Hydroxyl Radical
Water vapor
Metals
Annealing
Semiconductor materials
Oxygen
Defects
Temperature
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Koo, Chang Young ; Song, Keunkyu ; Jung, Yangho ; Yang, Wooseok ; Kim, Seung Hyun ; Jeong, Sunho ; Moon, Jooho. / Enhanced performance of solution-processed amorphous LiYInZnO thin-film transistors. In: ACS Applied Materials and Interfaces. 2012 ; Vol. 4, No. 3. pp. 1456-1461.
@article{6c4a4c79908d4e958aece5f635107a57,
title = "Enhanced performance of solution-processed amorphous LiYInZnO thin-film transistors",
abstract = "Solution-processed, amorphous lithium-doped YInZnO (L-YIZO) thin-film transistors (TFTs) are investigated. An appropriate amount of Li doping significantly enhances the field-effect mobility in TFT performance (∼15 times greater than that of nondoped YIZO) without controlled annealing under water vapor or O 3/O 2 environments. The addition of Li into solution-processed YIZO semiconductors leads to improved film quality, which results from enriched metal oxygen bonding and reduced defect sites, such as oxygen vacancies and hydroxyl groups. Li doping of an amorphous ionic oxide semiconductor (AIOS) could serve as an effective strategy for low-temperature and high-performance solution-processed AIOS TFTs.",
author = "Koo, {Chang Young} and Keunkyu Song and Yangho Jung and Wooseok Yang and Kim, {Seung Hyun} and Sunho Jeong and Jooho Moon",
year = "2012",
month = "3",
day = "28",
doi = "10.1021/am201701v",
language = "English",
volume = "4",
pages = "1456--1461",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "3",

}

Enhanced performance of solution-processed amorphous LiYInZnO thin-film transistors. / Koo, Chang Young; Song, Keunkyu; Jung, Yangho; Yang, Wooseok; Kim, Seung Hyun; Jeong, Sunho; Moon, Jooho.

In: ACS Applied Materials and Interfaces, Vol. 4, No. 3, 28.03.2012, p. 1456-1461.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhanced performance of solution-processed amorphous LiYInZnO thin-film transistors

AU - Koo, Chang Young

AU - Song, Keunkyu

AU - Jung, Yangho

AU - Yang, Wooseok

AU - Kim, Seung Hyun

AU - Jeong, Sunho

AU - Moon, Jooho

PY - 2012/3/28

Y1 - 2012/3/28

N2 - Solution-processed, amorphous lithium-doped YInZnO (L-YIZO) thin-film transistors (TFTs) are investigated. An appropriate amount of Li doping significantly enhances the field-effect mobility in TFT performance (∼15 times greater than that of nondoped YIZO) without controlled annealing under water vapor or O 3/O 2 environments. The addition of Li into solution-processed YIZO semiconductors leads to improved film quality, which results from enriched metal oxygen bonding and reduced defect sites, such as oxygen vacancies and hydroxyl groups. Li doping of an amorphous ionic oxide semiconductor (AIOS) could serve as an effective strategy for low-temperature and high-performance solution-processed AIOS TFTs.

AB - Solution-processed, amorphous lithium-doped YInZnO (L-YIZO) thin-film transistors (TFTs) are investigated. An appropriate amount of Li doping significantly enhances the field-effect mobility in TFT performance (∼15 times greater than that of nondoped YIZO) without controlled annealing under water vapor or O 3/O 2 environments. The addition of Li into solution-processed YIZO semiconductors leads to improved film quality, which results from enriched metal oxygen bonding and reduced defect sites, such as oxygen vacancies and hydroxyl groups. Li doping of an amorphous ionic oxide semiconductor (AIOS) could serve as an effective strategy for low-temperature and high-performance solution-processed AIOS TFTs.

UR - http://www.scopus.com/inward/record.url?scp=84859112252&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84859112252&partnerID=8YFLogxK

U2 - 10.1021/am201701v

DO - 10.1021/am201701v

M3 - Article

C2 - 22311703

AN - SCOPUS:84859112252

VL - 4

SP - 1456

EP - 1461

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 3

ER -