Enhanced performance of solution-processed amorphous LiYInZnO thin-film transistors

Chang Young Koo; Keunkyu Song; Yangho Jung; Wooseok Yang; Seung Hyun Kim; Sunho Jeong; Jooho Moon

doi:10.1021/am201701v

Enhanced performance of solution-processed amorphous LiYInZnO thin-film transistors

Chang Young Koo, Keunkyu Song, Yangho Jung, Wooseok Yang, Seung Hyun Kim, Sunho Jeong, Jooho Moon

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Solution-processed, amorphous lithium-doped YInZnO (L-YIZO) thin-film transistors (TFTs) are investigated. An appropriate amount of Li doping significantly enhances the field-effect mobility in TFT performance (∼15 times greater than that of nondoped YIZO) without controlled annealing under water vapor or O ₃/O ₂ environments. The addition of Li into solution-processed YIZO semiconductors leads to improved film quality, which results from enriched metal oxygen bonding and reduced defect sites, such as oxygen vacancies and hydroxyl groups. Li doping of an amorphous ionic oxide semiconductor (AIOS) could serve as an effective strategy for low-temperature and high-performance solution-processed AIOS TFTs.

Original language	English
Pages (from-to)	1456-1461
Number of pages	6
Journal	ACS Applied Materials and Interfaces
Volume	4
Issue number	3
DOIs	https://doi.org/10.1021/am201701v
Publication status	Published - 2012 Mar 28

All Science Journal Classification (ASJC) codes

Materials Science(all)

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10.1021/am201701v

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abstract = "Solution-processed, amorphous lithium-doped YInZnO (L-YIZO) thin-film transistors (TFTs) are investigated. An appropriate amount of Li doping significantly enhances the field-effect mobility in TFT performance (∼15 times greater than that of nondoped YIZO) without controlled annealing under water vapor or O 3/O 2 environments. The addition of Li into solution-processed YIZO semiconductors leads to improved film quality, which results from enriched metal oxygen bonding and reduced defect sites, such as oxygen vacancies and hydroxyl groups. Li doping of an amorphous ionic oxide semiconductor (AIOS) could serve as an effective strategy for low-temperature and high-performance solution-processed AIOS TFTs.",

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AU - Koo, Chang Young

AU - Song, Keunkyu

AU - Jung, Yangho

AU - Yang, Wooseok

AU - Kim, Seung Hyun

AU - Jeong, Sunho

AU - Moon, Jooho

PY - 2012/3/28

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AB - Solution-processed, amorphous lithium-doped YInZnO (L-YIZO) thin-film transistors (TFTs) are investigated. An appropriate amount of Li doping significantly enhances the field-effect mobility in TFT performance (∼15 times greater than that of nondoped YIZO) without controlled annealing under water vapor or O 3/O 2 environments. The addition of Li into solution-processed YIZO semiconductors leads to improved film quality, which results from enriched metal oxygen bonding and reduced defect sites, such as oxygen vacancies and hydroxyl groups. Li doping of an amorphous ionic oxide semiconductor (AIOS) could serve as an effective strategy for low-temperature and high-performance solution-processed AIOS TFTs.

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Enhanced performance of solution-processed amorphous LiYInZnO thin-film transistors

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