Abstract
Solution-processed, amorphous lithium-doped YInZnO (L-YIZO) thin-film transistors (TFTs) are investigated. An appropriate amount of Li doping significantly enhances the field-effect mobility in TFT performance (∼15 times greater than that of nondoped YIZO) without controlled annealing under water vapor or O 3/O 2 environments. The addition of Li into solution-processed YIZO semiconductors leads to improved film quality, which results from enriched metal oxygen bonding and reduced defect sites, such as oxygen vacancies and hydroxyl groups. Li doping of an amorphous ionic oxide semiconductor (AIOS) could serve as an effective strategy for low-temperature and high-performance solution-processed AIOS TFTs.
| Original language | English |
|---|---|
| Pages (from-to) | 1456-1461 |
| Number of pages | 6 |
| Journal | ACS Applied Materials and Interfaces |
| Volume | 4 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2012 Mar 28 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
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Cite this
Koo, C. Y., Song, K., Jung, Y., Yang, W., Kim, S. H., Jeong, S., & Moon, J. (2012). Enhanced performance of solution-processed amorphous LiYInZnO thin-film transistors. ACS Applied Materials and Interfaces, 4(3), 1456-1461. https://doi.org/10.1021/am201701v