Abstract
A simple route of external mechanical force is presented for enhancing the electrical properties of polymer nanocomposite consisted of nanowires. By dispersing ZnO nanowires in polymer solution and drop casting on substrates, nanocomposite transistors containing ZnO nanowires are successfully fabricated. Even though the ZnO nanowires density is properly controlled for device fabrication, as-casted device does not show any detectable currents, because nanowires are separated far from each other with the insulating polymer matrix intervening between them. Compared to the device pressed at 300 kPa, the device pressed at 600 kPa exhibits a significantly enhanced performance. Such an improved device performance would be realized by the contacts improvement and the increase of the number of electrical path induced by external force. This approach provides a viable solution for serious contact resistance problem of nanocomposite materials and broadens their use in a variety of applications.
| Original language | English |
|---|---|
| Title of host publication | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings |
| Pages | 1183-1184 |
| Number of pages | 2 |
| DOIs | |
| Publication status | Published - 2010 May 5 |
| Event | 2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China Duration: 2010 Jan 3 → 2010 Jan 8 |
Publication series
| Name | INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings |
|---|
Other
| Other | 2010 3rd International Nanoelectronics Conference, INEC 2010 |
|---|---|
| Country | China |
| City | Hongkong |
| Period | 10/1/3 → 10/1/8 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
Cite this
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Enhanced performance of ZnO nanocomposite transistor by external mechanical force. / Choi, Ji Hyuk; Moon, Kyung Ju; Jeon, Joohee; Kar, Jyoti Prakash; Khang, Dahl Young; Lee, Tae Il; Myoung, Jae Min.
INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1183-1184 5424965 (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Enhanced performance of ZnO nanocomposite transistor by external mechanical force
AU - Choi, Ji Hyuk
AU - Moon, Kyung Ju
AU - Jeon, Joohee
AU - Kar, Jyoti Prakash
AU - Khang, Dahl Young
AU - Lee, Tae Il
AU - Myoung, Jae Min
PY - 2010/5/5
Y1 - 2010/5/5
N2 - A simple route of external mechanical force is presented for enhancing the electrical properties of polymer nanocomposite consisted of nanowires. By dispersing ZnO nanowires in polymer solution and drop casting on substrates, nanocomposite transistors containing ZnO nanowires are successfully fabricated. Even though the ZnO nanowires density is properly controlled for device fabrication, as-casted device does not show any detectable currents, because nanowires are separated far from each other with the insulating polymer matrix intervening between them. Compared to the device pressed at 300 kPa, the device pressed at 600 kPa exhibits a significantly enhanced performance. Such an improved device performance would be realized by the contacts improvement and the increase of the number of electrical path induced by external force. This approach provides a viable solution for serious contact resistance problem of nanocomposite materials and broadens their use in a variety of applications.
AB - A simple route of external mechanical force is presented for enhancing the electrical properties of polymer nanocomposite consisted of nanowires. By dispersing ZnO nanowires in polymer solution and drop casting on substrates, nanocomposite transistors containing ZnO nanowires are successfully fabricated. Even though the ZnO nanowires density is properly controlled for device fabrication, as-casted device does not show any detectable currents, because nanowires are separated far from each other with the insulating polymer matrix intervening between them. Compared to the device pressed at 300 kPa, the device pressed at 600 kPa exhibits a significantly enhanced performance. Such an improved device performance would be realized by the contacts improvement and the increase of the number of electrical path induced by external force. This approach provides a viable solution for serious contact resistance problem of nanocomposite materials and broadens their use in a variety of applications.
UR - http://www.scopus.com/inward/record.url?scp=77951662038&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77951662038&partnerID=8YFLogxK
U2 - 10.1109/INEC.2010.5424965
DO - 10.1109/INEC.2010.5424965
M3 - Conference contribution
AN - SCOPUS:77951662038
SN - 9781424435449
T3 - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
SP - 1183
EP - 1184
BT - INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
ER -