Enhanced performance of ZnO nanocomposite transistor by external mechanical force

Ji Hyuk Choi, Kyung Ju Moon, Joohee Jeon, Jyoti Prakash Kar, Dahl Young Khang, Tae Il Lee, Jae Min Myoung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A simple route of external mechanical force is presented for enhancing the electrical properties of polymer nanocomposite consisted of nanowires. By dispersing ZnO nanowires in polymer solution and drop casting on substrates, nanocomposite transistors containing ZnO nanowires are successfully fabricated. Even though the ZnO nanowires density is properly controlled for device fabrication, as-casted device does not show any detectable currents, because nanowires are separated far from each other with the insulating polymer matrix intervening between them. Compared to the device pressed at 300 kPa, the device pressed at 600 kPa exhibits a significantly enhanced performance. Such an improved device performance would be realized by the contacts improvement and the increase of the number of electrical path induced by external force. This approach provides a viable solution for serious contact resistance problem of nanocomposite materials and broadens their use in a variety of applications.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1183-1184
Number of pages2
DOIs
Publication statusPublished - 2010 May 5
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 2010 Jan 32010 Jan 8

Other

Other2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period10/1/310/1/8

Fingerprint

Nanowires
Nanocomposites
Transistors
Contact resistance
Polymer solutions
Polymer matrix
Casting
Electric properties
Fabrication
Polymers
Substrates

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Choi, J. H., Moon, K. J., Jeon, J., Kar, J. P., Khang, D. Y., Lee, T. I., & Myoung, J. M. (2010). Enhanced performance of ZnO nanocomposite transistor by external mechanical force. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1183-1184). [5424965] https://doi.org/10.1109/INEC.2010.5424965
Choi, Ji Hyuk ; Moon, Kyung Ju ; Jeon, Joohee ; Kar, Jyoti Prakash ; Khang, Dahl Young ; Lee, Tae Il ; Myoung, Jae Min. / Enhanced performance of ZnO nanocomposite transistor by external mechanical force. INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. pp. 1183-1184
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Choi, JH, Moon, KJ, Jeon, J, Kar, JP, Khang, DY, Lee, TI & Myoung, JM 2010, Enhanced performance of ZnO nanocomposite transistor by external mechanical force. in INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings., 5424965, pp. 1183-1184, 2010 3rd International Nanoelectronics Conference, INEC 2010, Hongkong, China, 10/1/3. https://doi.org/10.1109/INEC.2010.5424965

Enhanced performance of ZnO nanocomposite transistor by external mechanical force. / Choi, Ji Hyuk; Moon, Kyung Ju; Jeon, Joohee; Kar, Jyoti Prakash; Khang, Dahl Young; Lee, Tae Il; Myoung, Jae Min.

INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1183-1184 5424965.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Choi JH, Moon KJ, Jeon J, Kar JP, Khang DY, Lee TI et al. Enhanced performance of ZnO nanocomposite transistor by external mechanical force. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings. 2010. p. 1183-1184. 5424965 https://doi.org/10.1109/INEC.2010.5424965