Herein, β-Ga2O3 photocatalyst was designed to improve the photocatalytic activity. Therefore, two strategies were employed: chemical modification by Ce doping and morphological control by formation of nanofibers. Therefore, Ce-doped β-Ga2O3 nanofibers were successfully synthesized using a sol–gel derived electrospinning. These synthesized nanofibers were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and UV–vis spectroscopy. The SEM and XRD results indicated that Ce doping slightly influence on the morphology and crystal structure of nanofibers. In addition, the UV–vis transmittance spectra result indicates that the bandgap energy of Ce-doped β-Ga2O3 nanofibers was significantly reduced from 4.92 eV to 4.54 eV. In specific, the 0.7 mol % Ce-doped β-Ga2O3 nanofibers exhibits the lowest optical band gap energy as 4.54 eV. Moreover, the photodegradation properties of β-Ga2O3 nanofibers were evaluated by using the Methylene Blue (MB) under UV light. Interestingly, the β-Ga2O3 nanofibers doped by 0.7 mol% cerium atom exhibited the highest photocatalytic activity than other synthesized nanofibers. Consequently, from the overall characterizations, it was found that improved activity of photocatalytic degradation will be attributed to the narrow optical bandgap energy and reduced recombination rate arising from the cerium doping.
|Number of pages||13|
|Journal||Journal of Materials Science: Materials in Electronics|
|Publication status||Published - 2021 Feb|
Bibliographical noteFunding Information:
This study has been conducted with the support of the Korea Institute of Industrial Technology as "Development of eco-friendly production system technology for total periodic resource cycle? (KITECH EO-20-0022).
© 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering