Enhanced photoelectrochemical water oxidation on bismuth vanadate by electrodeposition of amorphous titanium dioxide

David Eisenberg, Hyun S. Ahn, Allen J. Bard

Research output: Contribution to journalArticle

132 Citations (Scopus)

Abstract

n-BiVO4 is a promising semiconductor material for photoelectrochemical water oxidation. Although most thin-film syntheses yield discontinuous BiVO4 layers, back reduction of photo-oxidized products on the conductive substrate has never been considered as a possible energy loss mechanism in the material. We report that a 15 s electrodeposition of amorphous TiO2 (a-TiO2) on W:BiVO4/F:SnO2 blocks this undesired back reduction and dramatically improves the photoelectrochemical performance of the electrode. Water oxidation photocurrent increases by up to 5.5 times, and its onset potential shifts negatively by ∼500 mV. In addition to blocking solution-mediated recombination at the substrate, the a-TiO2 film - which is found to lack any photocatalytic activity in itself - is hypothesized to react with surface defects and deactivate them toward surface recombination. The proposed treatment is simple and effective, and it may easily be extended to a wide variety of thin-film photoelectrodes.

Original languageEnglish
Pages (from-to)14011-14014
Number of pages4
JournalJournal of the American Chemical Society
Volume136
Issue number40
DOIs
Publication statusPublished - 2014 Oct 8

Fingerprint

Electroplating
Bismuth
Electrodeposition
Titanium dioxide
Thin films
Oxidation
Genetic Recombination
Water
Surface defects
Amorphous films
Substrates
Photocurrents
Energy dissipation
Semiconductors
Semiconductor materials
Electrodes
bismuth vanadium tetraoxide
titanium dioxide

All Science Journal Classification (ASJC) codes

  • Catalysis
  • Chemistry(all)
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

@article{c6ab5b5f29e84063872ef20817334b2b,
title = "Enhanced photoelectrochemical water oxidation on bismuth vanadate by electrodeposition of amorphous titanium dioxide",
abstract = "n-BiVO4 is a promising semiconductor material for photoelectrochemical water oxidation. Although most thin-film syntheses yield discontinuous BiVO4 layers, back reduction of photo-oxidized products on the conductive substrate has never been considered as a possible energy loss mechanism in the material. We report that a 15 s electrodeposition of amorphous TiO2 (a-TiO2) on W:BiVO4/F:SnO2 blocks this undesired back reduction and dramatically improves the photoelectrochemical performance of the electrode. Water oxidation photocurrent increases by up to 5.5 times, and its onset potential shifts negatively by ∼500 mV. In addition to blocking solution-mediated recombination at the substrate, the a-TiO2 film - which is found to lack any photocatalytic activity in itself - is hypothesized to react with surface defects and deactivate them toward surface recombination. The proposed treatment is simple and effective, and it may easily be extended to a wide variety of thin-film photoelectrodes.",
author = "David Eisenberg and Ahn, {Hyun S.} and Bard, {Allen J.}",
year = "2014",
month = "10",
day = "8",
doi = "10.1021/ja5082475",
language = "English",
volume = "136",
pages = "14011--14014",
journal = "Journal of the American Chemical Society",
issn = "0002-7863",
publisher = "American Chemical Society",
number = "40",

}

Enhanced photoelectrochemical water oxidation on bismuth vanadate by electrodeposition of amorphous titanium dioxide. / Eisenberg, David; Ahn, Hyun S.; Bard, Allen J.

In: Journal of the American Chemical Society, Vol. 136, No. 40, 08.10.2014, p. 14011-14014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhanced photoelectrochemical water oxidation on bismuth vanadate by electrodeposition of amorphous titanium dioxide

AU - Eisenberg, David

AU - Ahn, Hyun S.

AU - Bard, Allen J.

PY - 2014/10/8

Y1 - 2014/10/8

N2 - n-BiVO4 is a promising semiconductor material for photoelectrochemical water oxidation. Although most thin-film syntheses yield discontinuous BiVO4 layers, back reduction of photo-oxidized products on the conductive substrate has never been considered as a possible energy loss mechanism in the material. We report that a 15 s electrodeposition of amorphous TiO2 (a-TiO2) on W:BiVO4/F:SnO2 blocks this undesired back reduction and dramatically improves the photoelectrochemical performance of the electrode. Water oxidation photocurrent increases by up to 5.5 times, and its onset potential shifts negatively by ∼500 mV. In addition to blocking solution-mediated recombination at the substrate, the a-TiO2 film - which is found to lack any photocatalytic activity in itself - is hypothesized to react with surface defects and deactivate them toward surface recombination. The proposed treatment is simple and effective, and it may easily be extended to a wide variety of thin-film photoelectrodes.

AB - n-BiVO4 is a promising semiconductor material for photoelectrochemical water oxidation. Although most thin-film syntheses yield discontinuous BiVO4 layers, back reduction of photo-oxidized products on the conductive substrate has never been considered as a possible energy loss mechanism in the material. We report that a 15 s electrodeposition of amorphous TiO2 (a-TiO2) on W:BiVO4/F:SnO2 blocks this undesired back reduction and dramatically improves the photoelectrochemical performance of the electrode. Water oxidation photocurrent increases by up to 5.5 times, and its onset potential shifts negatively by ∼500 mV. In addition to blocking solution-mediated recombination at the substrate, the a-TiO2 film - which is found to lack any photocatalytic activity in itself - is hypothesized to react with surface defects and deactivate them toward surface recombination. The proposed treatment is simple and effective, and it may easily be extended to a wide variety of thin-film photoelectrodes.

UR - http://www.scopus.com/inward/record.url?scp=84907919620&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907919620&partnerID=8YFLogxK

U2 - 10.1021/ja5082475

DO - 10.1021/ja5082475

M3 - Article

VL - 136

SP - 14011

EP - 14014

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 40

ER -