Enhanced piezoelectric and imprint characteristics of in situ sputtered Ta-doped Pb(Zr,Ti)O3 thin films on Ir/TiW/SiO2/Si substrates

Chan Su Han, Kyu Sik Park, Hong Je Choi, Yong Soo Cho

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

High quality piezoelectric thin films have been pursued with simpler processing steps without subsequent annealing and poling procedure. Here, the in situ domain formation process of Ta-doped Pb(Zr0.52Ti0.48)O3 thin films was experimentally verified when the sputtering deposition proceeded with nonconventional buffer electrodes of Ir/TiW. The 2 mol% Ta-doped thin films with ∼2 μm thickness showed promising transverse piezoelectric coefficient e31 of −8.66 C/m2 and enhanced imprint behavior with a coercive field shift Ec,shift of ∼24 kV/cm. These improvements, which are ideally useful for mobile sensor applications, are attributed to the increase in crystallinity and the preferred domain orientation induced by the in situ polarization upon deposition. The incorporation of Ta into the perovskite lattices as a donor seems to help in inducing stronger internal field in the film by forming defects-driven dipoles. Therefore, this internal field might cause a clamping of domain walls, leading to the strong imprint behavior.

Original languageEnglish
Pages (from-to)369-375
Number of pages7
JournalJournal of Alloys and Compounds
Volume720
DOIs
Publication statusPublished - 2017 Jan 1

Fingerprint

Thin films
Substrates
Domain walls
Perovskite
Sputtering
Buffers
Annealing
Polarization
Defects
Electrodes
Sensors
Processing
perovskite

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

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abstract = "High quality piezoelectric thin films have been pursued with simpler processing steps without subsequent annealing and poling procedure. Here, the in situ domain formation process of Ta-doped Pb(Zr0.52Ti0.48)O3 thin films was experimentally verified when the sputtering deposition proceeded with nonconventional buffer electrodes of Ir/TiW. The 2 mol{\%} Ta-doped thin films with ∼2 μm thickness showed promising transverse piezoelectric coefficient e31 of −8.66 C/m2 and enhanced imprint behavior with a coercive field shift Ec,shift of ∼24 kV/cm. These improvements, which are ideally useful for mobile sensor applications, are attributed to the increase in crystallinity and the preferred domain orientation induced by the in situ polarization upon deposition. The incorporation of Ta into the perovskite lattices as a donor seems to help in inducing stronger internal field in the film by forming defects-driven dipoles. Therefore, this internal field might cause a clamping of domain walls, leading to the strong imprint behavior.",
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Enhanced piezoelectric and imprint characteristics of in situ sputtered Ta-doped Pb(Zr,Ti)O3 thin films on Ir/TiW/SiO2/Si substrates. / Han, Chan Su; Park, Kyu Sik; Choi, Hong Je; Cho, Yong Soo.

In: Journal of Alloys and Compounds, Vol. 720, 01.01.2017, p. 369-375.

Research output: Contribution to journalArticle

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AU - Cho, Yong Soo

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