Enhanced prformance in SOI FinFETs with low series resistance by aluminum implant as a solution beyond 22nm node

I. Ok, C. D. Young, W. Y. Loh, T. Ngai, S. Lian, Jungwoo Oh, M. P. Rodgers, S. Bennett, H. O. Stamper, D. L. Franca, S. Lin, K. Akarvardar, C. Smith, C. Hobbs, P. Kirsch, R. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

We present an approach to scale Rext while maintaining control of short channel effects in scaled finFETs. For FETs with fins <20nm, an enhancement of 19% in drain current was achieved in nFETs by incorporating Al at silicide-Si interface. This Al implantation while reducing the Schottky barrier height for n-Si contact by 0.4 eV, does not degrade the integrity of the junction extensions or gate stacks. These attributes constitute a simple non-planar cMOS integration sequence for enhancing future high performance technology nodes.

Original languageEnglish
Title of host publication2010 Symposium on VLSI Technology, VLSIT 2010
Pages17-18
Number of pages2
DOIs
Publication statusPublished - 2010 Oct 19
Event2010 Symposium on VLSI Technology, VLSIT 2010 - Honolulu, HI, United States
Duration: 2010 Jun 152010 Jun 17

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2010 Symposium on VLSI Technology, VLSIT 2010
CountryUnited States
CityHonolulu, HI
Period10/6/1510/6/17

Fingerprint

Drain current
Field effect transistors
Aluminum
FinFET

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Ok, I., Young, C. D., Loh, W. Y., Ngai, T., Lian, S., Oh, J., ... Jammy, R. (2010). Enhanced prformance in SOI FinFETs with low series resistance by aluminum implant as a solution beyond 22nm node. In 2010 Symposium on VLSI Technology, VLSIT 2010 (pp. 17-18). [5556138] (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2010.5556138
Ok, I. ; Young, C. D. ; Loh, W. Y. ; Ngai, T. ; Lian, S. ; Oh, Jungwoo ; Rodgers, M. P. ; Bennett, S. ; Stamper, H. O. ; Franca, D. L. ; Lin, S. ; Akarvardar, K. ; Smith, C. ; Hobbs, C. ; Kirsch, P. ; Jammy, R. / Enhanced prformance in SOI FinFETs with low series resistance by aluminum implant as a solution beyond 22nm node. 2010 Symposium on VLSI Technology, VLSIT 2010. 2010. pp. 17-18 (Digest of Technical Papers - Symposium on VLSI Technology).
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abstract = "We present an approach to scale Rext while maintaining control of short channel effects in scaled finFETs. For FETs with fins <20nm, an enhancement of 19{\%} in drain current was achieved in nFETs by incorporating Al at silicide-Si interface. This Al implantation while reducing the Schottky barrier height for n-Si contact by 0.4 eV, does not degrade the integrity of the junction extensions or gate stacks. These attributes constitute a simple non-planar cMOS integration sequence for enhancing future high performance technology nodes.",
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Ok, I, Young, CD, Loh, WY, Ngai, T, Lian, S, Oh, J, Rodgers, MP, Bennett, S, Stamper, HO, Franca, DL, Lin, S, Akarvardar, K, Smith, C, Hobbs, C, Kirsch, P & Jammy, R 2010, Enhanced prformance in SOI FinFETs with low series resistance by aluminum implant as a solution beyond 22nm node. in 2010 Symposium on VLSI Technology, VLSIT 2010., 5556138, Digest of Technical Papers - Symposium on VLSI Technology, pp. 17-18, 2010 Symposium on VLSI Technology, VLSIT 2010, Honolulu, HI, United States, 10/6/15. https://doi.org/10.1109/VLSIT.2010.5556138

Enhanced prformance in SOI FinFETs with low series resistance by aluminum implant as a solution beyond 22nm node. / Ok, I.; Young, C. D.; Loh, W. Y.; Ngai, T.; Lian, S.; Oh, Jungwoo; Rodgers, M. P.; Bennett, S.; Stamper, H. O.; Franca, D. L.; Lin, S.; Akarvardar, K.; Smith, C.; Hobbs, C.; Kirsch, P.; Jammy, R.

2010 Symposium on VLSI Technology, VLSIT 2010. 2010. p. 17-18 5556138 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Ok I, Young CD, Loh WY, Ngai T, Lian S, Oh J et al. Enhanced prformance in SOI FinFETs with low series resistance by aluminum implant as a solution beyond 22nm node. In 2010 Symposium on VLSI Technology, VLSIT 2010. 2010. p. 17-18. 5556138. (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.1109/VLSIT.2010.5556138