Enhanced Reconfigurable Physical Unclonable Function Based on Stochastic Nature of Multilevel Cell RRAM

Gyo Sub Lee, Gun Hwan Kim, Kisung Kwak, Doo Seok Jeong, Hyunsu Ju

Research output: Contribution to journalArticlepeer-review


The physical unclonable function (PUF) based on resistive random-access memory (RRAM) possesses a distinctive advantage that can offer higher security and lower cost than the traditional complementary metal-oxide-semiconductor-based cryptographic devices and other conventional PUFs. The intrinsic stochasticity of RRAM devices successfully provides attractive properties to implement PUF. In this paper, we present a novel multistate-based RRAM PUF to realize strong tolerance against attack. By applying multilevel states with bit shuffling to the RRAM PUF, the randomness and uniqueness were enhanced close to ideal values. In addition, the bit error rate was dramatically reduced using the temperature compensation mechanism. Moreover, our new method not only enables the generation of larger challenge-response pairs (CRPs) with less footprint but also can reconfigure CRPs.

Original languageEnglish
Article number8660576
Pages (from-to)1717-1721
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number4
Publication statusPublished - 2019 Apr

Bibliographical note

Funding Information:
Manuscript received November 22, 2018; revised January 15, 2019; accepted January 29, 2019. Date of publication March 5, 2019; date of current version March 22, 2019. This work was supported by the National Research Foundation Program under Grant NRF-2017R1E1A1A01077484. The review of this paper was arranged by Editor U. E. Avci. (Gyo Sub Lee and Gun-Hwan Kim contributed equally to this work.) (Corresponding authors: Doo Seok Jeong; Hyunsu Ju.) G. S. Lee and H. Ju are with the Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology, Seoul 02792, South Korea, and also with the Department of Nanomaterials Science and Engineering, Korea University of Science and Technology, Daejeon 34113, South Korea (e-mail: hyunsuju@kist.re.kr).

Publisher Copyright:
© 2019 IEEE.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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