In this study, we investigated the effect of phase-change characteristics on the device performance of carbon-incorporated Ge2Sb2Te5(CGST) to understand the origin of the enhanced reliability and stabilization of the device. Macroscopic and microscopic measurements confirmed that the structural stability significantly increased with the incorporation of as much as 10% carbon. After the completion of bond formation between C and Ge, the excess C (>5 atomic%) engages in bonding with Sb in localized regions because of the difference in formation energy. These bonds of C with Ge and Sb induce non-uniform local charge density of the short-range order. Finally, because the strong bonds between Ge and C shorten the short Ge-Te bonds, the high thermal stability of CGST relative to that of GST can be attributed to intensified Peierls distortion. The formation of strong bonds successfully underpins the local structures and reduces the stochastic effect. Moreover, extension of the C bonding to Sb enhances the structural reliability, resulting in highly stable CGST in the amorphous phase. Finally, the device stability of CGST in the reset state of the amorphous structure during the device switching process was significantly improved.
|Number of pages||10|
|Publication status||Published - 2021 Jun 25|
Bibliographical noteFunding Information:
This research was supported by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning (NRF-2016M3A7B4910398). This work was also supported by the Ministry of Trade, Industry & Energy (MOTIE) in Korea (Project No. 10080625) and the Korea Semiconductor Research Consortium (KSRC) through a project for developing source technologies for future semiconductor devices.
© The Royal Society of Chemistry 2021.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)