Enhanced thermal stability of high-dielectric Gd2O3 films using ZrO2 incorporation

M. H. Cho, D. W. Moon, S. A. Park, Y. S. Rho, Y. K. Kim, K. Jeong, C. H. Chang, J. H. Gu, J. H. Lee, S. Y. Choi

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Abstract

The thermal stability of Gd2O3 films as a function of incorporated ZrO2 was investigated. The structural characteristics of epitaxial Gd2O3 with the codeposition of Zn were maintained on the Si(111) substrate. The improved cyrstallinity of the film and suppressed interfacial reactions were observed by the incorporation of ZrO2 in Gd2O3. Depending on the microstructural changes, the structutral stability in the epitaxial structure with no deformation was enhanced upto 800°C. The extensive interactions between Gd and Si which caused interfacial defects were also minimized.

Original languageEnglish
Pages (from-to)678-680
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number5
DOIs
Publication statusPublished - 2004 Feb 2

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Cho, M. H., Moon, D. W., Park, S. A., Rho, Y. S., Kim, Y. K., Jeong, K., Chang, C. H., Gu, J. H., Lee, J. H., & Choi, S. Y. (2004). Enhanced thermal stability of high-dielectric Gd2O3 films using ZrO2 incorporation. Applied Physics Letters, 84(5), 678-680. https://doi.org/10.1063/1.1644047