Enhanced thermoelectric performance of n-type Cu0.008Bi2Te2.7Se0.3 by band engineering

Kyu Hyoung Lee, Sang Il Kim, Hyeona Mun, Byungki Ryu, Soon Mok Choi, Hee Jung Park, Sungwoo Hwang, Sung Wng Kim

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Abstract

We herein report the significantly improved thermoelectric performance of n-type Bi2Te2.7Se0.3 polycrystalline bulks through band structure engineering achieved by Au-doping. The Seebeck coefficient can be increased for both Bi2Te2.7Se0.3 and Cu-intercalated Bi2Te2.7Se0.3 bulks by doping Au on the Bi site, either due to the addition of the resonant state or the enhancement of density of states (DOS) effective mass md∗. Theoretical calculations combined with experimental measurements showed that band engineering connected with chemical potential tuning results in higher DOS at the bottom of the conduction band and increases the md∗ from ∼0.88m0 (Bi2Te2.7Se0.3) to ∼1.06m0 (Cu0.008Bi1.99Au0.01Te2.7Se0.3). As a consequence, a peak thermoelectric figure of merit ZT ∼0.91 was obtained at 320 K for Cu0.008Bi1.99Au0.01Te2.7Se0.3, which is ∼40% and ∼25% enhancement in comparison with Bi2Te2.7Se0.3 and Cu0.008Bi2Te2.7Se0.3, respectively.

Original languageEnglish
Pages (from-to)10604-10609
Number of pages6
JournalJournal of Materials Chemistry C
Volume3
Issue number40
DOIs
Publication statusPublished - 2015 Jan 1

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Doping (additives)
Seebeck coefficient
Chemical potential
Conduction bands
Band structure
Tuning

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Lee, Kyu Hyoung ; Kim, Sang Il ; Mun, Hyeona ; Ryu, Byungki ; Choi, Soon Mok ; Park, Hee Jung ; Hwang, Sungwoo ; Kim, Sung Wng. / Enhanced thermoelectric performance of n-type Cu0.008Bi2Te2.7Se0.3 by band engineering. In: Journal of Materials Chemistry C. 2015 ; Vol. 3, No. 40. pp. 10604-10609.
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abstract = "We herein report the significantly improved thermoelectric performance of n-type Bi2Te2.7Se0.3 polycrystalline bulks through band structure engineering achieved by Au-doping. The Seebeck coefficient can be increased for both Bi2Te2.7Se0.3 and Cu-intercalated Bi2Te2.7Se0.3 bulks by doping Au on the Bi site, either due to the addition of the resonant state or the enhancement of density of states (DOS) effective mass md∗. Theoretical calculations combined with experimental measurements showed that band engineering connected with chemical potential tuning results in higher DOS at the bottom of the conduction band and increases the md∗ from ∼0.88m0 (Bi2Te2.7Se0.3) to ∼1.06m0 (Cu0.008Bi1.99Au0.01Te2.7Se0.3). As a consequence, a peak thermoelectric figure of merit ZT ∼0.91 was obtained at 320 K for Cu0.008Bi1.99Au0.01Te2.7Se0.3, which is ∼40{\%} and ∼25{\%} enhancement in comparison with Bi2Te2.7Se0.3 and Cu0.008Bi2Te2.7Se0.3, respectively.",
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Lee, KH, Kim, SI, Mun, H, Ryu, B, Choi, SM, Park, HJ, Hwang, S & Kim, SW 2015, 'Enhanced thermoelectric performance of n-type Cu0.008Bi2Te2.7Se0.3 by band engineering', Journal of Materials Chemistry C, vol. 3, no. 40, pp. 10604-10609. https://doi.org/10.1039/c5tc01731a

Enhanced thermoelectric performance of n-type Cu0.008Bi2Te2.7Se0.3 by band engineering. / Lee, Kyu Hyoung; Kim, Sang Il; Mun, Hyeona; Ryu, Byungki; Choi, Soon Mok; Park, Hee Jung; Hwang, Sungwoo; Kim, Sung Wng.

In: Journal of Materials Chemistry C, Vol. 3, No. 40, 01.01.2015, p. 10604-10609.

Research output: Contribution to journalArticle

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AU - Lee, Kyu Hyoung

AU - Kim, Sang Il

AU - Mun, Hyeona

AU - Ryu, Byungki

AU - Choi, Soon Mok

AU - Park, Hee Jung

AU - Hwang, Sungwoo

AU - Kim, Sung Wng

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Y1 - 2015/1/1

N2 - We herein report the significantly improved thermoelectric performance of n-type Bi2Te2.7Se0.3 polycrystalline bulks through band structure engineering achieved by Au-doping. The Seebeck coefficient can be increased for both Bi2Te2.7Se0.3 and Cu-intercalated Bi2Te2.7Se0.3 bulks by doping Au on the Bi site, either due to the addition of the resonant state or the enhancement of density of states (DOS) effective mass md∗. Theoretical calculations combined with experimental measurements showed that band engineering connected with chemical potential tuning results in higher DOS at the bottom of the conduction band and increases the md∗ from ∼0.88m0 (Bi2Te2.7Se0.3) to ∼1.06m0 (Cu0.008Bi1.99Au0.01Te2.7Se0.3). As a consequence, a peak thermoelectric figure of merit ZT ∼0.91 was obtained at 320 K for Cu0.008Bi1.99Au0.01Te2.7Se0.3, which is ∼40% and ∼25% enhancement in comparison with Bi2Te2.7Se0.3 and Cu0.008Bi2Te2.7Se0.3, respectively.

AB - We herein report the significantly improved thermoelectric performance of n-type Bi2Te2.7Se0.3 polycrystalline bulks through band structure engineering achieved by Au-doping. The Seebeck coefficient can be increased for both Bi2Te2.7Se0.3 and Cu-intercalated Bi2Te2.7Se0.3 bulks by doping Au on the Bi site, either due to the addition of the resonant state or the enhancement of density of states (DOS) effective mass md∗. Theoretical calculations combined with experimental measurements showed that band engineering connected with chemical potential tuning results in higher DOS at the bottom of the conduction band and increases the md∗ from ∼0.88m0 (Bi2Te2.7Se0.3) to ∼1.06m0 (Cu0.008Bi1.99Au0.01Te2.7Se0.3). As a consequence, a peak thermoelectric figure of merit ZT ∼0.91 was obtained at 320 K for Cu0.008Bi1.99Au0.01Te2.7Se0.3, which is ∼40% and ∼25% enhancement in comparison with Bi2Te2.7Se0.3 and Cu0.008Bi2Te2.7Se0.3, respectively.

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