Enhanced Thermoelectric Performance of p-Type Bi-Sb-Te Alloys by Codoping with Ga and Ag

Kyu Hyoung Lee, Soon Mok Choi, Jong Wook Roh, Sungwoo Hwang, Sang Il Kim, Weon Ho Shin, Hee Jung Park, Jeong Hoon Lee, Sung Wng Kim, Dae Jin Yang

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15 Citations (Scopus)

Abstract

We report an enhancement of the thermoelectric performance in spark-plasma-sintered polycrystalline p-type Bi0.42Sb1.58Te3 by codoping with Ga and Ag at Bi/Sb-site. Through controlled doping of Ga (n-type) and Ag (p-type), electronic transport properties including the electrical conductivity (~988 S/cm at 300 K) and power factor (~3.91 mW m−1 K−2 at 300 K) could be maintained at values comparable to those of pristine Bi0.42Sb1.58Te3, while the lattice thermal conductivity was significantly reduced due to point-defect phonon scattering originating from the mass difference between the host atoms (Bi and Sb) and dopants (Ga and Ag). Through these synergetic effects, a peak ZT of 1.15 was obtained in Bi0.42Sb1.5535Ga0.025Ag0.0015Te3 at 360 K, and ZT could be engineered to be over 1.0 for a wide temperature range (300 K to 420 K).

Original languageEnglish
Pages (from-to)1531-1535
Number of pages5
JournalJournal of Electronic Materials
Volume44
Issue number6
DOIs
Publication statusPublished - 2015 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Lee, K. H., Choi, S. M., Roh, J. W., Hwang, S., Kim, S. I., Shin, W. H., Park, H. J., Lee, J. H., Kim, S. W., & Yang, D. J. (2015). Enhanced Thermoelectric Performance of p-Type Bi-Sb-Te Alloys by Codoping with Ga and Ag. Journal of Electronic Materials, 44(6), 1531-1535. https://doi.org/10.1007/s11664-014-3446-1