Enhanced Thermoelectric Performance of p-Type Bi-Sb-Te Alloys by Codoping with Ga and Ag

Kyu Hyoung Lee, Soon Mok Choi, Jong Wook Roh, Sungwoo Hwang, Sang Il Kim, Weon Ho Shin, Hee Jung Park, Jeong Hoon Lee, Sung Wng Kim, Dae Jin Yang

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We report an enhancement of the thermoelectric performance in spark-plasma-sintered polycrystalline p-type Bi0.42Sb1.58Te3 by codoping with Ga and Ag at Bi/Sb-site. Through controlled doping of Ga (n-type) and Ag (p-type), electronic transport properties including the electrical conductivity (~988 S/cm at 300 K) and power factor (~3.91 mW m−1 K−2 at 300 K) could be maintained at values comparable to those of pristine Bi0.42Sb1.58Te3, while the lattice thermal conductivity was significantly reduced due to point-defect phonon scattering originating from the mass difference between the host atoms (Bi and Sb) and dopants (Ga and Ag). Through these synergetic effects, a peak ZT of 1.15 was obtained in Bi0.42Sb1.5535Ga0.025Ag0.0015Te3 at 360 K, and ZT could be engineered to be over 1.0 for a wide temperature range (300 K to 420 K).

Original languageEnglish
Pages (from-to)1531-1535
Number of pages5
JournalJournal of Electronic Materials
Volume44
Issue number6
DOIs
Publication statusPublished - 2015 Jun 1

Fingerprint

sparks
point defects
thermal conductivity
transport properties
Doping (additives)
electrical resistivity
Phonon scattering
augmentation
Point defects
Electric sparks
scattering
electronics
Crystal lattices
Transport properties
atoms
Thermal conductivity
Plasmas
Atoms
temperature
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Lee, Kyu Hyoung ; Choi, Soon Mok ; Roh, Jong Wook ; Hwang, Sungwoo ; Kim, Sang Il ; Shin, Weon Ho ; Park, Hee Jung ; Lee, Jeong Hoon ; Kim, Sung Wng ; Yang, Dae Jin. / Enhanced Thermoelectric Performance of p-Type Bi-Sb-Te Alloys by Codoping with Ga and Ag. In: Journal of Electronic Materials. 2015 ; Vol. 44, No. 6. pp. 1531-1535.
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Lee, KH, Choi, SM, Roh, JW, Hwang, S, Kim, SI, Shin, WH, Park, HJ, Lee, JH, Kim, SW & Yang, DJ 2015, 'Enhanced Thermoelectric Performance of p-Type Bi-Sb-Te Alloys by Codoping with Ga and Ag', Journal of Electronic Materials, vol. 44, no. 6, pp. 1531-1535. https://doi.org/10.1007/s11664-014-3446-1

Enhanced Thermoelectric Performance of p-Type Bi-Sb-Te Alloys by Codoping with Ga and Ag. / Lee, Kyu Hyoung; Choi, Soon Mok; Roh, Jong Wook; Hwang, Sungwoo; Kim, Sang Il; Shin, Weon Ho; Park, Hee Jung; Lee, Jeong Hoon; Kim, Sung Wng; Yang, Dae Jin.

In: Journal of Electronic Materials, Vol. 44, No. 6, 01.06.2015, p. 1531-1535.

Research output: Contribution to journalArticle

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AU - Lee, Kyu Hyoung

AU - Choi, Soon Mok

AU - Roh, Jong Wook

AU - Hwang, Sungwoo

AU - Kim, Sang Il

AU - Shin, Weon Ho

AU - Park, Hee Jung

AU - Lee, Jeong Hoon

AU - Kim, Sung Wng

AU - Yang, Dae Jin

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N2 - We report an enhancement of the thermoelectric performance in spark-plasma-sintered polycrystalline p-type Bi0.42Sb1.58Te3 by codoping with Ga and Ag at Bi/Sb-site. Through controlled doping of Ga (n-type) and Ag (p-type), electronic transport properties including the electrical conductivity (~988 S/cm at 300 K) and power factor (~3.91 mW m−1 K−2 at 300 K) could be maintained at values comparable to those of pristine Bi0.42Sb1.58Te3, while the lattice thermal conductivity was significantly reduced due to point-defect phonon scattering originating from the mass difference between the host atoms (Bi and Sb) and dopants (Ga and Ag). Through these synergetic effects, a peak ZT of 1.15 was obtained in Bi0.42Sb1.5535Ga0.025Ag0.0015Te3 at 360 K, and ZT could be engineered to be over 1.0 for a wide temperature range (300 K to 420 K).

AB - We report an enhancement of the thermoelectric performance in spark-plasma-sintered polycrystalline p-type Bi0.42Sb1.58Te3 by codoping with Ga and Ag at Bi/Sb-site. Through controlled doping of Ga (n-type) and Ag (p-type), electronic transport properties including the electrical conductivity (~988 S/cm at 300 K) and power factor (~3.91 mW m−1 K−2 at 300 K) could be maintained at values comparable to those of pristine Bi0.42Sb1.58Te3, while the lattice thermal conductivity was significantly reduced due to point-defect phonon scattering originating from the mass difference between the host atoms (Bi and Sb) and dopants (Ga and Ag). Through these synergetic effects, a peak ZT of 1.15 was obtained in Bi0.42Sb1.5535Ga0.025Ag0.0015Te3 at 360 K, and ZT could be engineered to be over 1.0 for a wide temperature range (300 K to 420 K).

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