Abstract
Thermoelectric properties of p-type Bi0.4Sb1.6Te3 polycrystalline bulks fabricated by spark plasma sintering from the ingots of stoichiometric Bi0.4Sb1.6Te3 and 0.5–3 wt.% excess Te added compositions were investigated in an effort to demonstrate the feasibility of traditional melt-solidification combined with a pressure induced sintering process. We found that the electronic and thermal transport properties of p-type Bi2-xSbxTe3 could be optimized by excess Te addition due to the suppression of uncontrollable formation of Te-vacancies during the fabrication process. Enhanced thermoelectric performance ZT of 1.1 at 300 K was obtained in 1, 2, and 3 wt.% excess Te added Bi0.4Sb1.6Te3. High ZT and superior controllability of the thermoelectric transport parameters achieved in the present study enable the pressure induced sintering process to be utilized for commercial manufacturing process for solid state cooling and power generation modules.
| Original language | English |
|---|---|
| Pages (from-to) | 7681-7684 |
| Number of pages | 4 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 17 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2017 Oct 1 |
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All Science Journal Classification (ASJC) codes
- Medicine(all)
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Enhanced thermoelectric performance of p-type Bi04Sb16Te3 by excess Te addition. / Kim, Tae Wan; Roh, Jong Wook; Moon, Seung Pil; Ahn, Yeon Sik; Park, Hee Jung; Choi, Soon Mok; Kim, Jong Young; Kim, Sung Wng; Lee, Kyu Hyoung.
In: Journal of Nanoscience and Nanotechnology, Vol. 17, No. 10, 01.10.2017, p. 7681-7684.Research output: Contribution to journal › Article
TY - JOUR
T1 - Enhanced thermoelectric performance of p-type Bi04Sb16Te3 by excess Te addition
AU - Kim, Tae Wan
AU - Roh, Jong Wook
AU - Moon, Seung Pil
AU - Ahn, Yeon Sik
AU - Park, Hee Jung
AU - Choi, Soon Mok
AU - Kim, Jong Young
AU - Kim, Sung Wng
AU - Lee, Kyu Hyoung
PY - 2017/10/1
Y1 - 2017/10/1
N2 - Thermoelectric properties of p-type Bi0.4Sb1.6Te3 polycrystalline bulks fabricated by spark plasma sintering from the ingots of stoichiometric Bi0.4Sb1.6Te3 and 0.5–3 wt.% excess Te added compositions were investigated in an effort to demonstrate the feasibility of traditional melt-solidification combined with a pressure induced sintering process. We found that the electronic and thermal transport properties of p-type Bi2-xSbxTe3 could be optimized by excess Te addition due to the suppression of uncontrollable formation of Te-vacancies during the fabrication process. Enhanced thermoelectric performance ZT of 1.1 at 300 K was obtained in 1, 2, and 3 wt.% excess Te added Bi0.4Sb1.6Te3. High ZT and superior controllability of the thermoelectric transport parameters achieved in the present study enable the pressure induced sintering process to be utilized for commercial manufacturing process for solid state cooling and power generation modules.
AB - Thermoelectric properties of p-type Bi0.4Sb1.6Te3 polycrystalline bulks fabricated by spark plasma sintering from the ingots of stoichiometric Bi0.4Sb1.6Te3 and 0.5–3 wt.% excess Te added compositions were investigated in an effort to demonstrate the feasibility of traditional melt-solidification combined with a pressure induced sintering process. We found that the electronic and thermal transport properties of p-type Bi2-xSbxTe3 could be optimized by excess Te addition due to the suppression of uncontrollable formation of Te-vacancies during the fabrication process. Enhanced thermoelectric performance ZT of 1.1 at 300 K was obtained in 1, 2, and 3 wt.% excess Te added Bi0.4Sb1.6Te3. High ZT and superior controllability of the thermoelectric transport parameters achieved in the present study enable the pressure induced sintering process to be utilized for commercial manufacturing process for solid state cooling and power generation modules.
UR - http://www.scopus.com/inward/record.url?scp=85025684072&partnerID=8YFLogxK
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U2 - 10.1166/jnn.2017.14820
DO - 10.1166/jnn.2017.14820
M3 - Article
AN - SCOPUS:85025684072
VL - 17
SP - 7681
EP - 7684
JO - Journal of Nanoscience and Nanotechnology
JF - Journal of Nanoscience and Nanotechnology
SN - 1533-4880
IS - 10
ER -