Enhanced thermoelectric properties in Bi/Te core/shell heterostructure nanowires through strain and interface engineering

Jeongmin Kim, Gwansik Kim, Je Hyeong Bahk, Jin Seo Noh, Wooyoung Lee

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Strain-engineered Bi/Te core/shell (C/S) nanowires (NWs) with various diameters were prepared by combining the on-film formation of NWs method with post-sputtering. Multiple devices were fabricated based on individual C/S NWs. The diameter-dependent electrical conductivity (σ), Seebeck coefficient (S), and thermal conductivity (κ) of the Bi/Te C/S NWs were systematically investigated. S and σ were found to increase with increasing NW diameter until they maximized at diameters exceeding 400 nm. Together with the reduction in κ, this generated a maximum thermoelectric figure of merit of 0.5 for a relatively large-diameter Bi/Te C/S NW (d=456 nm) at room temperature. These results suggest that the C/S NW structure could be used to modify the thermoelectric performance of materials, as the figure of merit was significantly greater than previously reported values for pure Bi NWs (0.07) and bulk Bi (0.05). Furthermore, the enhanced performance of very large Bi/Te C/S NWs demonstrated the possibility of designing heterostructures that can be used in thermoelectric device and module applications.

Original languageEnglish
Pages (from-to)520-525
Number of pages6
JournalNano Energy
Volume32
DOIs
Publication statusPublished - 2017 Feb 1

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Nanowires
Heterojunctions
Seebeck coefficient
Sputtering
Thermal conductivity

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)
  • Electrical and Electronic Engineering

Cite this

Kim, Jeongmin ; Kim, Gwansik ; Bahk, Je Hyeong ; Noh, Jin Seo ; Lee, Wooyoung. / Enhanced thermoelectric properties in Bi/Te core/shell heterostructure nanowires through strain and interface engineering. In: Nano Energy. 2017 ; Vol. 32. pp. 520-525.
@article{a8210bd92c93449aa8fa9848ec3c396d,
title = "Enhanced thermoelectric properties in Bi/Te core/shell heterostructure nanowires through strain and interface engineering",
abstract = "Strain-engineered Bi/Te core/shell (C/S) nanowires (NWs) with various diameters were prepared by combining the on-film formation of NWs method with post-sputtering. Multiple devices were fabricated based on individual C/S NWs. The diameter-dependent electrical conductivity (σ), Seebeck coefficient (S), and thermal conductivity (κ) of the Bi/Te C/S NWs were systematically investigated. S and σ were found to increase with increasing NW diameter until they maximized at diameters exceeding 400 nm. Together with the reduction in κ, this generated a maximum thermoelectric figure of merit of 0.5 for a relatively large-diameter Bi/Te C/S NW (d=456 nm) at room temperature. These results suggest that the C/S NW structure could be used to modify the thermoelectric performance of materials, as the figure of merit was significantly greater than previously reported values for pure Bi NWs (0.07) and bulk Bi (0.05). Furthermore, the enhanced performance of very large Bi/Te C/S NWs demonstrated the possibility of designing heterostructures that can be used in thermoelectric device and module applications.",
author = "Jeongmin Kim and Gwansik Kim and Bahk, {Je Hyeong} and Noh, {Jin Seo} and Wooyoung Lee",
year = "2017",
month = "2",
day = "1",
doi = "10.1016/j.nanoen.2017.01.017",
language = "English",
volume = "32",
pages = "520--525",
journal = "Nano Energy",
issn = "2211-2855",
publisher = "Elsevier BV",

}

Enhanced thermoelectric properties in Bi/Te core/shell heterostructure nanowires through strain and interface engineering. / Kim, Jeongmin; Kim, Gwansik; Bahk, Je Hyeong; Noh, Jin Seo; Lee, Wooyoung.

In: Nano Energy, Vol. 32, 01.02.2017, p. 520-525.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhanced thermoelectric properties in Bi/Te core/shell heterostructure nanowires through strain and interface engineering

AU - Kim, Jeongmin

AU - Kim, Gwansik

AU - Bahk, Je Hyeong

AU - Noh, Jin Seo

AU - Lee, Wooyoung

PY - 2017/2/1

Y1 - 2017/2/1

N2 - Strain-engineered Bi/Te core/shell (C/S) nanowires (NWs) with various diameters were prepared by combining the on-film formation of NWs method with post-sputtering. Multiple devices were fabricated based on individual C/S NWs. The diameter-dependent electrical conductivity (σ), Seebeck coefficient (S), and thermal conductivity (κ) of the Bi/Te C/S NWs were systematically investigated. S and σ were found to increase with increasing NW diameter until they maximized at diameters exceeding 400 nm. Together with the reduction in κ, this generated a maximum thermoelectric figure of merit of 0.5 for a relatively large-diameter Bi/Te C/S NW (d=456 nm) at room temperature. These results suggest that the C/S NW structure could be used to modify the thermoelectric performance of materials, as the figure of merit was significantly greater than previously reported values for pure Bi NWs (0.07) and bulk Bi (0.05). Furthermore, the enhanced performance of very large Bi/Te C/S NWs demonstrated the possibility of designing heterostructures that can be used in thermoelectric device and module applications.

AB - Strain-engineered Bi/Te core/shell (C/S) nanowires (NWs) with various diameters were prepared by combining the on-film formation of NWs method with post-sputtering. Multiple devices were fabricated based on individual C/S NWs. The diameter-dependent electrical conductivity (σ), Seebeck coefficient (S), and thermal conductivity (κ) of the Bi/Te C/S NWs were systematically investigated. S and σ were found to increase with increasing NW diameter until they maximized at diameters exceeding 400 nm. Together with the reduction in κ, this generated a maximum thermoelectric figure of merit of 0.5 for a relatively large-diameter Bi/Te C/S NW (d=456 nm) at room temperature. These results suggest that the C/S NW structure could be used to modify the thermoelectric performance of materials, as the figure of merit was significantly greater than previously reported values for pure Bi NWs (0.07) and bulk Bi (0.05). Furthermore, the enhanced performance of very large Bi/Te C/S NWs demonstrated the possibility of designing heterostructures that can be used in thermoelectric device and module applications.

UR - http://www.scopus.com/inward/record.url?scp=85009382344&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85009382344&partnerID=8YFLogxK

U2 - 10.1016/j.nanoen.2017.01.017

DO - 10.1016/j.nanoen.2017.01.017

M3 - Article

AN - SCOPUS:85009382344

VL - 32

SP - 520

EP - 525

JO - Nano Energy

JF - Nano Energy

SN - 2211-2855

ER -