Enhanced tunneling magnetoresistance and thermal stability of magnetic tunnel junction by rapid thermal anneal

K. I. Lee, J. H. Lee, W. Y. Lee, K. W. Rhie, J. G. Ha, C. S. Kim, K. H. Shin

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The effect of rapid thermal anneal (RTA) has been investigated on the properties of an FeMn exchange-biased magnetic tunnel junction (MTJ) using magnetoresistance and I-V measurements and transmission electron microscopy (TEM). The tunneling magnetoresistance (TMR) in an as-grown MTJ is found to be ∼27%, while the TMR in MTJs annealed by RTA increases with annealing temperature up to 300°C, reaching ∼l46%. TEM images reveal that the interface of Al2O3 layer for the annealed MTJ has changed into a relatively clear morphology, as compared to that for the as-grown MTJ. The oxide barrier parameters are found to vary abruptly with annealing time within a few ten seconds. Our results demonstrate that the present RTA enhances the thermal stability of MTJs.

Original languageEnglish
Pages (from-to)120-122
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Issue number1-3
Publication statusPublished - 2002 Feb 1


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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