Enhanced tunneling properties of band-engineered (HfO2) x(SiO2)1-x/SiO2 double dielectric layers for non-volatile flash memory device

Min Young Heo, Jonggi Kim, Hae Yoon Kang, Jinho Oh, Kyumin Lee, Hyunchul Sohn

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

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