Abstract
We have studied the characteristics of transparent bottom-gate thin film transistors (TFTs) using InGaZnO (IGZO) as an active channel material. IGZO films were deposited on SiO2/Si substrates by DC sputtering techniques. Thereafter, the bottom-gate TFT devices were fabricated by depositing Ti/Au metal pads on IGZO films, where the channel length and width were defined to be 200 and 1000 μm, respectively. Post-metallization thermal annealing of the devices was carried out at 260, 280 and 300 °C in nitrogen ambient for 1 h. The devices annealed at 280 °C have shown better characteristics with enhanced field-effect mobility and high onoff current ratio. The compositional variation of IGZO films was also observed with different annealing temperatures.
| Original language | English |
|---|---|
| Pages (from-to) | 320-324 |
| Number of pages | 5 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 13 |
| Issue number | 5-6 |
| DOIs | |
| Publication status | Published - 2010 Dec 15 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
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Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing. / Jeon, Sang Jin; Chang, Jong Woong; Choi, Kwang Soo; Kar, Jyoti Prakash; Lee, Tae Il; Myoung, Jae Min.
In: Materials Science in Semiconductor Processing, Vol. 13, No. 5-6, 15.12.2010, p. 320-324.Research output: Contribution to journal › Article
TY - JOUR
T1 - Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing
AU - Jeon, Sang Jin
AU - Chang, Jong Woong
AU - Choi, Kwang Soo
AU - Kar, Jyoti Prakash
AU - Lee, Tae Il
AU - Myoung, Jae Min
PY - 2010/12/15
Y1 - 2010/12/15
N2 - We have studied the characteristics of transparent bottom-gate thin film transistors (TFTs) using InGaZnO (IGZO) as an active channel material. IGZO films were deposited on SiO2/Si substrates by DC sputtering techniques. Thereafter, the bottom-gate TFT devices were fabricated by depositing Ti/Au metal pads on IGZO films, where the channel length and width were defined to be 200 and 1000 μm, respectively. Post-metallization thermal annealing of the devices was carried out at 260, 280 and 300 °C in nitrogen ambient for 1 h. The devices annealed at 280 °C have shown better characteristics with enhanced field-effect mobility and high onoff current ratio. The compositional variation of IGZO films was also observed with different annealing temperatures.
AB - We have studied the characteristics of transparent bottom-gate thin film transistors (TFTs) using InGaZnO (IGZO) as an active channel material. IGZO films were deposited on SiO2/Si substrates by DC sputtering techniques. Thereafter, the bottom-gate TFT devices were fabricated by depositing Ti/Au metal pads on IGZO films, where the channel length and width were defined to be 200 and 1000 μm, respectively. Post-metallization thermal annealing of the devices was carried out at 260, 280 and 300 °C in nitrogen ambient for 1 h. The devices annealed at 280 °C have shown better characteristics with enhanced field-effect mobility and high onoff current ratio. The compositional variation of IGZO films was also observed with different annealing temperatures.
UR - http://www.scopus.com/inward/record.url?scp=82455171930&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=82455171930&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2011.02.012
DO - 10.1016/j.mssp.2011.02.012
M3 - Article
AN - SCOPUS:82455171930
VL - 13
SP - 320
EP - 324
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
IS - 5-6
ER -