Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing

Sang Jin Jeon; Jong Woong Chang; Kwang Soo Choi; Jyoti Prakash Kar; Tae Il Lee; Jae Min Myoung

doi:10.1016/j.mssp.2011.02.012

Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing

Sang Jin Jeon, Jong Woong Chang, Kwang Soo Choi, Jyoti Prakash Kar, Tae Il Lee, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We have studied the characteristics of transparent bottom-gate thin film transistors (TFTs) using InGaZnO (IGZO) as an active channel material. IGZO films were deposited on SiO₂/Si substrates by DC sputtering techniques. Thereafter, the bottom-gate TFT devices were fabricated by depositing Ti/Au metal pads on IGZO films, where the channel length and width were defined to be 200 and 1000 μm, respectively. Post-metallization thermal annealing of the devices was carried out at 260, 280 and 300 °C in nitrogen ambient for 1 h. The devices annealed at 280 °C have shown better characteristics with enhanced field-effect mobility and high onoff current ratio. The compositional variation of IGZO films was also observed with different annealing temperatures.

Original language	English
Pages (from-to)	320-324
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	13
Issue number	5-6
DOIs	https://doi.org/10.1016/j.mssp.2011.02.012
Publication status	Published - 2010 Dec 15

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mssp.2011.02.012

Cite this

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title = "Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing",

abstract = "We have studied the characteristics of transparent bottom-gate thin film transistors (TFTs) using InGaZnO (IGZO) as an active channel material. IGZO films were deposited on SiO2/Si substrates by DC sputtering techniques. Thereafter, the bottom-gate TFT devices were fabricated by depositing Ti/Au metal pads on IGZO films, where the channel length and width were defined to be 200 and 1000 μm, respectively. Post-metallization thermal annealing of the devices was carried out at 260, 280 and 300 °C in nitrogen ambient for 1 h. The devices annealed at 280 °C have shown better characteristics with enhanced field-effect mobility and high onoff current ratio. The compositional variation of IGZO films was also observed with different annealing temperatures.",

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AU - Jeon, Sang Jin

AU - Chang, Jong Woong

AU - Choi, Kwang Soo

AU - Kar, Jyoti Prakash

AU - Lee, Tae Il

AU - Myoung, Jae Min

PY - 2010/12/15

Y1 - 2010/12/15

N2 - We have studied the characteristics of transparent bottom-gate thin film transistors (TFTs) using InGaZnO (IGZO) as an active channel material. IGZO films were deposited on SiO2/Si substrates by DC sputtering techniques. Thereafter, the bottom-gate TFT devices were fabricated by depositing Ti/Au metal pads on IGZO films, where the channel length and width were defined to be 200 and 1000 μm, respectively. Post-metallization thermal annealing of the devices was carried out at 260, 280 and 300 °C in nitrogen ambient for 1 h. The devices annealed at 280 °C have shown better characteristics with enhanced field-effect mobility and high onoff current ratio. The compositional variation of IGZO films was also observed with different annealing temperatures.

AB - We have studied the characteristics of transparent bottom-gate thin film transistors (TFTs) using InGaZnO (IGZO) as an active channel material. IGZO films were deposited on SiO2/Si substrates by DC sputtering techniques. Thereafter, the bottom-gate TFT devices were fabricated by depositing Ti/Au metal pads on IGZO films, where the channel length and width were defined to be 200 and 1000 μm, respectively. Post-metallization thermal annealing of the devices was carried out at 260, 280 and 300 °C in nitrogen ambient for 1 h. The devices annealed at 280 °C have shown better characteristics with enhanced field-effect mobility and high onoff current ratio. The compositional variation of IGZO films was also observed with different annealing temperatures.

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Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing

Abstract

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