We have studied the characteristics of transparent bottom-gate thin film transistors (TFTs) using InGaZnO (IGZO) as an active channel material. IGZO films were deposited on SiO2/Si substrates by DC sputtering techniques. Thereafter, the bottom-gate TFT devices were fabricated by depositing Ti/Au metal pads on IGZO films, where the channel length and width were defined to be 200 and 1000 μm, respectively. Post-metallization thermal annealing of the devices was carried out at 260, 280 and 300 °C in nitrogen ambient for 1 h. The devices annealed at 280 °C have shown better characteristics with enhanced field-effect mobility and high onoff current ratio. The compositional variation of IGZO films was also observed with different annealing temperatures.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering