Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing

Sang Jin Jeon, Jong Woong Chang, Kwang Soo Choi, Jyoti Prakash Kar, Tae Il Lee, Jae Min Myoung

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We have studied the characteristics of transparent bottom-gate thin film transistors (TFTs) using InGaZnO (IGZO) as an active channel material. IGZO films were deposited on SiO2/Si substrates by DC sputtering techniques. Thereafter, the bottom-gate TFT devices were fabricated by depositing Ti/Au metal pads on IGZO films, where the channel length and width were defined to be 200 and 1000 μm, respectively. Post-metallization thermal annealing of the devices was carried out at 260, 280 and 300 °C in nitrogen ambient for 1 h. The devices annealed at 280 °C have shown better characteristics with enhanced field-effect mobility and high onoff current ratio. The compositional variation of IGZO films was also observed with different annealing temperatures.

Original languageEnglish
Pages (from-to)320-324
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume13
Issue number5-6
DOIs
Publication statusPublished - 2010 Dec 15

Fingerprint

Zinc Oxide
gallium oxides
Gallium
Indium
Thin film transistors
Zinc oxide
zinc oxides
indium
transistors
Annealing
annealing
augmentation
thin films
Metallizing
Temperature
Sputtering
high current
Nitrogen
sputtering
Metals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Jeon, Sang Jin ; Chang, Jong Woong ; Choi, Kwang Soo ; Kar, Jyoti Prakash ; Lee, Tae Il ; Myoung, Jae Min. / Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing. In: Materials Science in Semiconductor Processing. 2010 ; Vol. 13, No. 5-6. pp. 320-324.
@article{d2afb1e4067c482db4ec08aa999608ce,
title = "Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing",
abstract = "We have studied the characteristics of transparent bottom-gate thin film transistors (TFTs) using InGaZnO (IGZO) as an active channel material. IGZO films were deposited on SiO2/Si substrates by DC sputtering techniques. Thereafter, the bottom-gate TFT devices were fabricated by depositing Ti/Au metal pads on IGZO films, where the channel length and width were defined to be 200 and 1000 μm, respectively. Post-metallization thermal annealing of the devices was carried out at 260, 280 and 300 °C in nitrogen ambient for 1 h. The devices annealed at 280 °C have shown better characteristics with enhanced field-effect mobility and high onoff current ratio. The compositional variation of IGZO films was also observed with different annealing temperatures.",
author = "Jeon, {Sang Jin} and Chang, {Jong Woong} and Choi, {Kwang Soo} and Kar, {Jyoti Prakash} and Lee, {Tae Il} and Myoung, {Jae Min}",
year = "2010",
month = "12",
day = "15",
doi = "10.1016/j.mssp.2011.02.012",
language = "English",
volume = "13",
pages = "320--324",
journal = "Materials Science in Semiconductor Processing",
issn = "1369-8001",
publisher = "Elsevier Limited",
number = "5-6",

}

Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing. / Jeon, Sang Jin; Chang, Jong Woong; Choi, Kwang Soo; Kar, Jyoti Prakash; Lee, Tae Il; Myoung, Jae Min.

In: Materials Science in Semiconductor Processing, Vol. 13, No. 5-6, 15.12.2010, p. 320-324.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing

AU - Jeon, Sang Jin

AU - Chang, Jong Woong

AU - Choi, Kwang Soo

AU - Kar, Jyoti Prakash

AU - Lee, Tae Il

AU - Myoung, Jae Min

PY - 2010/12/15

Y1 - 2010/12/15

N2 - We have studied the characteristics of transparent bottom-gate thin film transistors (TFTs) using InGaZnO (IGZO) as an active channel material. IGZO films were deposited on SiO2/Si substrates by DC sputtering techniques. Thereafter, the bottom-gate TFT devices were fabricated by depositing Ti/Au metal pads on IGZO films, where the channel length and width were defined to be 200 and 1000 μm, respectively. Post-metallization thermal annealing of the devices was carried out at 260, 280 and 300 °C in nitrogen ambient for 1 h. The devices annealed at 280 °C have shown better characteristics with enhanced field-effect mobility and high onoff current ratio. The compositional variation of IGZO films was also observed with different annealing temperatures.

AB - We have studied the characteristics of transparent bottom-gate thin film transistors (TFTs) using InGaZnO (IGZO) as an active channel material. IGZO films were deposited on SiO2/Si substrates by DC sputtering techniques. Thereafter, the bottom-gate TFT devices were fabricated by depositing Ti/Au metal pads on IGZO films, where the channel length and width were defined to be 200 and 1000 μm, respectively. Post-metallization thermal annealing of the devices was carried out at 260, 280 and 300 °C in nitrogen ambient for 1 h. The devices annealed at 280 °C have shown better characteristics with enhanced field-effect mobility and high onoff current ratio. The compositional variation of IGZO films was also observed with different annealing temperatures.

UR - http://www.scopus.com/inward/record.url?scp=82455171930&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=82455171930&partnerID=8YFLogxK

U2 - 10.1016/j.mssp.2011.02.012

DO - 10.1016/j.mssp.2011.02.012

M3 - Article

AN - SCOPUS:82455171930

VL - 13

SP - 320

EP - 324

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

SN - 1369-8001

IS - 5-6

ER -