Enhancement in electrical performance of indium gallium zinc oxide-based thin film transistors by low temperature thermal annealing

Sang Jin Jeon, Jong Woong Chang, Kwang Soo Choi, Jyoti Prakash Kar, Tae Il Lee, Jae Min Myoung

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We have studied the characteristics of transparent bottom-gate thin film transistors (TFTs) using InGaZnO (IGZO) as an active channel material. IGZO films were deposited on SiO2/Si substrates by DC sputtering techniques. Thereafter, the bottom-gate TFT devices were fabricated by depositing Ti/Au metal pads on IGZO films, where the channel length and width were defined to be 200 and 1000 μm, respectively. Post-metallization thermal annealing of the devices was carried out at 260, 280 and 300 °C in nitrogen ambient for 1 h. The devices annealed at 280 °C have shown better characteristics with enhanced field-effect mobility and high onoff current ratio. The compositional variation of IGZO films was also observed with different annealing temperatures.

Original languageEnglish
Pages (from-to)320-324
Number of pages5
JournalMaterials Science in Semiconductor Processing
Volume13
Issue number5-6
DOIs
Publication statusPublished - 2010 Dec 15

Bibliographical note

Funding Information:
This research was supported by academic–industrial Cooperation Program of Samsung electronics LCD Industry. We thank all the members of LCD R&D panel 1 team for support and cooperation.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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