Enhancement in positive bias stress stability of In-Ga-Zn-O thin-film transistors with vertically graded-oxygen-vacancy active layer

Yeong Gyu Kim, Seokhyun Yoon, Seonghwan Hong, Jong Sun Choi, Hyun Jae Kim

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

To enhance the bias stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs), we proposed a simple method to deposit the vertically graded-oxygen-vacancy active layer (VGA). The oxygen partial pressure was varied during deposition in order to fabricate VGA TFTs using sputtering. By adopting this method, we could control the concentration of oxygen vacancy in active layer according to the depth. The threshold voltage shift of optimized VGA TFTs was drastically improved under positive bias stress (PBS) condition compared with conventional ones.

Original languageEnglish
Pages (from-to)1209-1212
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume46
Issue numberBook 3
DOIs
Publication statusPublished - 2015 Jun 1
Event2015 SID International Symposium - San Jose, United States
Duration: 2015 Jun 4 → …

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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