With the top seeded solution growth (TSSG) method, SiC crystals are grown in a Si-C solution where the dissolved C is supplied from graphite crucibles. In this study, the reactivity of the graphite was enhanced by roughening the surface to form a SiC interlayer, the intermediate compound in the dissolution of C to a Si melt. As a result, we clearly observed an enhancement in the growth rate by roughening the graphite surface in the crystal growth of SiC using TSSG method.
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© 2017 The Japan Society of Applied Physics.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)