Enhancement in the rate of the top seeded solution growth of SiC crystals via a roughening of the graphite surface

Ji Young Yoon, Myung Hyun Lee, Younghee Kim, Won Seon Seo, Yong-Gun Shul, Won Jae Lee, Seong Min Jeong

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

With the top seeded solution growth (TSSG) method, SiC crystals are grown in a Si-C solution where the dissolved C is supplied from graphite crucibles. In this study, the reactivity of the graphite was enhanced by roughening the surface to form a SiC interlayer, the intermediate compound in the dissolution of C to a Si melt. As a result, we clearly observed an enhancement in the growth rate by roughening the graphite surface in the crystal growth of SiC using TSSG method.

Original languageEnglish
Article number065501
JournalJapanese Journal of Applied Physics
Volume56
Issue number6
DOIs
Publication statusPublished - 2017 Jun 1

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Graphite
graphite
Crystals
augmentation
crystals
Crucibles
crucibles
Crystal growth
crystal growth
interlayers
dissolving
Dissolution
reactivity

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Yoon, Ji Young ; Lee, Myung Hyun ; Kim, Younghee ; Seo, Won Seon ; Shul, Yong-Gun ; Lee, Won Jae ; Jeong, Seong Min. / Enhancement in the rate of the top seeded solution growth of SiC crystals via a roughening of the graphite surface. In: Japanese Journal of Applied Physics. 2017 ; Vol. 56, No. 6.
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Enhancement in the rate of the top seeded solution growth of SiC crystals via a roughening of the graphite surface. / Yoon, Ji Young; Lee, Myung Hyun; Kim, Younghee; Seo, Won Seon; Shul, Yong-Gun; Lee, Won Jae; Jeong, Seong Min.

In: Japanese Journal of Applied Physics, Vol. 56, No. 6, 065501, 01.06.2017.

Research output: Contribution to journalArticle

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AU - Lee, Myung Hyun

AU - Kim, Younghee

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AU - Shul, Yong-Gun

AU - Lee, Won Jae

AU - Jeong, Seong Min

PY - 2017/6/1

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AB - With the top seeded solution growth (TSSG) method, SiC crystals are grown in a Si-C solution where the dissolved C is supplied from graphite crucibles. In this study, the reactivity of the graphite was enhanced by roughening the surface to form a SiC interlayer, the intermediate compound in the dissolution of C to a Si melt. As a result, we clearly observed an enhancement in the growth rate by roughening the graphite surface in the crystal growth of SiC using TSSG method.

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