Enhancement in the rate of the top seeded solution growth of SiC crystals via a roughening of the graphite surface

Ji Young Yoon, Myung Hyun Lee, Younghee Kim, Won Seon Seo, Yong Gun Shul, Won Jae Lee, Seong Min Jeong

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

With the top seeded solution growth (TSSG) method, SiC crystals are grown in a Si-C solution where the dissolved C is supplied from graphite crucibles. In this study, the reactivity of the graphite was enhanced by roughening the surface to form a SiC interlayer, the intermediate compound in the dissolution of C to a Si melt. As a result, we clearly observed an enhancement in the growth rate by roughening the graphite surface in the crystal growth of SiC using TSSG method.

Original languageEnglish
Article number065501
JournalJapanese journal of applied physics
Volume56
Issue number6
DOIs
Publication statusPublished - 2017 Jun

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Enhancement in the rate of the top seeded solution growth of SiC crystals via a roughening of the graphite surface'. Together they form a unique fingerprint.

  • Cite this