Enhancement of a channel strain via dry oxidation of recessed source/drain Si 1-xGe x structures

S. W. Kim, J. H. Yoo, S. M. Koo, Dae Hong Ko, H. J. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We investigated the effects of oxidation on recessed source/drain Si 1-xGe x structures. Epitaxial Si 1-xGe x films were deposited on recessed source/drain structures using a selective epitaxial growth process combined with ultrahigh-vacuum chemical vapor deposition and oxidized in dry oxygen ambient. Based on nano beam diffraction analyses, the channel strain was effectively enhanced at specific oxidation conditions. The increase in channel strain results from the formation of Ge-rich layers on the top surface of the Si 1-xGe x regions upon oxidation.

Original languageEnglish
Title of host publicationULSI Process Integration 7
Pages175-180
Number of pages6
Edition7
DOIs
Publication statusPublished - 2011 Dec 1
Event7th Symposium on ULSI Process Integration - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 92011 Oct 14

Publication series

NameECS Transactions
Number7
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other7th Symposium on ULSI Process Integration - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period11/10/911/10/14

Fingerprint

Oxidation
Ultrahigh vacuum
Epitaxial growth
Chemical vapor deposition
Diffraction
Oxygen

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kim, S. W., Yoo, J. H., Koo, S. M., Ko, D. H., & Lee, H. J. (2011). Enhancement of a channel strain via dry oxidation of recessed source/drain Si 1-xGe x structures. In ULSI Process Integration 7 (7 ed., pp. 175-180). (ECS Transactions; Vol. 41, No. 7). https://doi.org/10.1149/1.3633297
Kim, S. W. ; Yoo, J. H. ; Koo, S. M. ; Ko, Dae Hong ; Lee, H. J. / Enhancement of a channel strain via dry oxidation of recessed source/drain Si 1-xGe x structures. ULSI Process Integration 7. 7. ed. 2011. pp. 175-180 (ECS Transactions; 7).
@inproceedings{965aef2c84b8441496cf3a351828354f,
title = "Enhancement of a channel strain via dry oxidation of recessed source/drain Si 1-xGe x structures",
abstract = "We investigated the effects of oxidation on recessed source/drain Si 1-xGe x structures. Epitaxial Si 1-xGe x films were deposited on recessed source/drain structures using a selective epitaxial growth process combined with ultrahigh-vacuum chemical vapor deposition and oxidized in dry oxygen ambient. Based on nano beam diffraction analyses, the channel strain was effectively enhanced at specific oxidation conditions. The increase in channel strain results from the formation of Ge-rich layers on the top surface of the Si 1-xGe x regions upon oxidation.",
author = "Kim, {S. W.} and Yoo, {J. H.} and Koo, {S. M.} and Ko, {Dae Hong} and Lee, {H. J.}",
year = "2011",
month = "12",
day = "1",
doi = "10.1149/1.3633297",
language = "English",
isbn = "9781566779074",
series = "ECS Transactions",
number = "7",
pages = "175--180",
booktitle = "ULSI Process Integration 7",
edition = "7",

}

Kim, SW, Yoo, JH, Koo, SM, Ko, DH & Lee, HJ 2011, Enhancement of a channel strain via dry oxidation of recessed source/drain Si 1-xGe x structures. in ULSI Process Integration 7. 7 edn, ECS Transactions, no. 7, vol. 41, pp. 175-180, 7th Symposium on ULSI Process Integration - 220th ECS Meeting, Boston, MA, United States, 11/10/9. https://doi.org/10.1149/1.3633297

Enhancement of a channel strain via dry oxidation of recessed source/drain Si 1-xGe x structures. / Kim, S. W.; Yoo, J. H.; Koo, S. M.; Ko, Dae Hong; Lee, H. J.

ULSI Process Integration 7. 7. ed. 2011. p. 175-180 (ECS Transactions; Vol. 41, No. 7).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Enhancement of a channel strain via dry oxidation of recessed source/drain Si 1-xGe x structures

AU - Kim, S. W.

AU - Yoo, J. H.

AU - Koo, S. M.

AU - Ko, Dae Hong

AU - Lee, H. J.

PY - 2011/12/1

Y1 - 2011/12/1

N2 - We investigated the effects of oxidation on recessed source/drain Si 1-xGe x structures. Epitaxial Si 1-xGe x films were deposited on recessed source/drain structures using a selective epitaxial growth process combined with ultrahigh-vacuum chemical vapor deposition and oxidized in dry oxygen ambient. Based on nano beam diffraction analyses, the channel strain was effectively enhanced at specific oxidation conditions. The increase in channel strain results from the formation of Ge-rich layers on the top surface of the Si 1-xGe x regions upon oxidation.

AB - We investigated the effects of oxidation on recessed source/drain Si 1-xGe x structures. Epitaxial Si 1-xGe x films were deposited on recessed source/drain structures using a selective epitaxial growth process combined with ultrahigh-vacuum chemical vapor deposition and oxidized in dry oxygen ambient. Based on nano beam diffraction analyses, the channel strain was effectively enhanced at specific oxidation conditions. The increase in channel strain results from the formation of Ge-rich layers on the top surface of the Si 1-xGe x regions upon oxidation.

UR - http://www.scopus.com/inward/record.url?scp=84863148315&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863148315&partnerID=8YFLogxK

U2 - 10.1149/1.3633297

DO - 10.1149/1.3633297

M3 - Conference contribution

AN - SCOPUS:84863148315

SN - 9781566779074

T3 - ECS Transactions

SP - 175

EP - 180

BT - ULSI Process Integration 7

ER -

Kim SW, Yoo JH, Koo SM, Ko DH, Lee HJ. Enhancement of a channel strain via dry oxidation of recessed source/drain Si 1-xGe x structures. In ULSI Process Integration 7. 7 ed. 2011. p. 175-180. (ECS Transactions; 7). https://doi.org/10.1149/1.3633297