Enhancement of a channel strain via dry oxidation of recessed source/drain Si 1-xGe x structures

S. W. Kim, J. H. Yoo, S. M. Koo, D. H. Ko, H. J. Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We investigated the effects of oxidation on recessed source/drain Si 1-xGe x structures. Epitaxial Si 1-xGe x films were deposited on recessed source/drain structures using a selective epitaxial growth process combined with ultrahigh-vacuum chemical vapor deposition and oxidized in dry oxygen ambient. Based on nano beam diffraction analyses, the channel strain was effectively enhanced at specific oxidation conditions. The increase in channel strain results from the formation of Ge-rich layers on the top surface of the Si 1-xGe x regions upon oxidation.

Original languageEnglish
Title of host publicationULSI Process Integration 7
Pages175-180
Number of pages6
Edition7
DOIs
Publication statusPublished - 2011 Dec 1
Event7th Symposium on ULSI Process Integration - 220th ECS Meeting - Boston, MA, United States
Duration: 2011 Oct 92011 Oct 14

Publication series

NameECS Transactions
Number7
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other7th Symposium on ULSI Process Integration - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period11/10/911/10/14

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Kim, S. W., Yoo, J. H., Koo, S. M., Ko, D. H., & Lee, H. J. (2011). Enhancement of a channel strain via dry oxidation of recessed source/drain Si 1-xGe x structures. In ULSI Process Integration 7 (7 ed., pp. 175-180). (ECS Transactions; Vol. 41, No. 7). https://doi.org/10.1149/1.3633297