Enhancement of a cyclic endurance of phase change memory by application of a high-density C15(Ge21Sb36Te43) film

J. H. Park, S. W. Kim, J. H. Kim, Dae Hong Ko, Z. Wu, D. Ahn, D. H. Ahn, J. M. Lee, S. B. Kang, S. Y. Choi

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The lower cyclic endurance of Phase Change Memory (PCM) devices limits the spread of its applications for reliable memory. The findings reported here show that micro-voids and excess vacancies that are produced during the deposition process and the subsequent growth in sputtered carbon-doped GeSbTe films is one of the major causes of device failure in PCM with cycling. We found that the size of voids in C15(Ge21Sb36Te43) films increased with increasing annealing temperature and the activation energy for the growth rate of voids was determined to be 2.22 eV. The film density, which is closely related to voids, varies with the deposition temperature and sputtering power used. The lower heat of vaporization of elemental Sb and Te compared to that for elemental Ge and C is a major cause of the low density of the film. It was possible to suppress void formation to a considerable extent by optimizing the deposition conditions, which leads to a dramatic enhancement in cyclic endurance by 2 orders of magnitude in PCM devices prepared at 300°C-300W compared to one prepared at 240°C-500W without change of compositions.

Original languageEnglish
Article number025013
JournalAIP Advances
Volume6
Issue number2
DOIs
Publication statusPublished - 2016 Feb 1

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endurance
voids
augmentation
heat of vaporization
causes
sputtering
activation energy
cycles
annealing
temperature
carbon

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Park, J. H. ; Kim, S. W. ; Kim, J. H. ; Ko, Dae Hong ; Wu, Z. ; Ahn, D. ; Ahn, D. H. ; Lee, J. M. ; Kang, S. B. ; Choi, S. Y. / Enhancement of a cyclic endurance of phase change memory by application of a high-density C15(Ge21Sb36Te43) film. In: AIP Advances. 2016 ; Vol. 6, No. 2.
@article{57527b73dab042a28d6512bdbcd075d4,
title = "Enhancement of a cyclic endurance of phase change memory by application of a high-density C15(Ge21Sb36Te43) film",
abstract = "The lower cyclic endurance of Phase Change Memory (PCM) devices limits the spread of its applications for reliable memory. The findings reported here show that micro-voids and excess vacancies that are produced during the deposition process and the subsequent growth in sputtered carbon-doped GeSbTe films is one of the major causes of device failure in PCM with cycling. We found that the size of voids in C15(Ge21Sb36Te43) films increased with increasing annealing temperature and the activation energy for the growth rate of voids was determined to be 2.22 eV. The film density, which is closely related to voids, varies with the deposition temperature and sputtering power used. The lower heat of vaporization of elemental Sb and Te compared to that for elemental Ge and C is a major cause of the low density of the film. It was possible to suppress void formation to a considerable extent by optimizing the deposition conditions, which leads to a dramatic enhancement in cyclic endurance by 2 orders of magnitude in PCM devices prepared at 300°C-300W compared to one prepared at 240°C-500W without change of compositions.",
author = "Park, {J. H.} and Kim, {S. W.} and Kim, {J. H.} and Ko, {Dae Hong} and Z. Wu and D. Ahn and Ahn, {D. H.} and Lee, {J. M.} and Kang, {S. B.} and Choi, {S. Y.}",
year = "2016",
month = "2",
day = "1",
doi = "10.1063/1.4942110",
language = "English",
volume = "6",
journal = "AIP Advances",
issn = "2158-3226",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

Park, JH, Kim, SW, Kim, JH, Ko, DH, Wu, Z, Ahn, D, Ahn, DH, Lee, JM, Kang, SB & Choi, SY 2016, 'Enhancement of a cyclic endurance of phase change memory by application of a high-density C15(Ge21Sb36Te43) film', AIP Advances, vol. 6, no. 2, 025013. https://doi.org/10.1063/1.4942110

Enhancement of a cyclic endurance of phase change memory by application of a high-density C15(Ge21Sb36Te43) film. / Park, J. H.; Kim, S. W.; Kim, J. H.; Ko, Dae Hong; Wu, Z.; Ahn, D.; Ahn, D. H.; Lee, J. M.; Kang, S. B.; Choi, S. Y.

In: AIP Advances, Vol. 6, No. 2, 025013, 01.02.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhancement of a cyclic endurance of phase change memory by application of a high-density C15(Ge21Sb36Te43) film

AU - Park, J. H.

AU - Kim, S. W.

AU - Kim, J. H.

AU - Ko, Dae Hong

AU - Wu, Z.

AU - Ahn, D.

AU - Ahn, D. H.

AU - Lee, J. M.

AU - Kang, S. B.

AU - Choi, S. Y.

PY - 2016/2/1

Y1 - 2016/2/1

N2 - The lower cyclic endurance of Phase Change Memory (PCM) devices limits the spread of its applications for reliable memory. The findings reported here show that micro-voids and excess vacancies that are produced during the deposition process and the subsequent growth in sputtered carbon-doped GeSbTe films is one of the major causes of device failure in PCM with cycling. We found that the size of voids in C15(Ge21Sb36Te43) films increased with increasing annealing temperature and the activation energy for the growth rate of voids was determined to be 2.22 eV. The film density, which is closely related to voids, varies with the deposition temperature and sputtering power used. The lower heat of vaporization of elemental Sb and Te compared to that for elemental Ge and C is a major cause of the low density of the film. It was possible to suppress void formation to a considerable extent by optimizing the deposition conditions, which leads to a dramatic enhancement in cyclic endurance by 2 orders of magnitude in PCM devices prepared at 300°C-300W compared to one prepared at 240°C-500W without change of compositions.

AB - The lower cyclic endurance of Phase Change Memory (PCM) devices limits the spread of its applications for reliable memory. The findings reported here show that micro-voids and excess vacancies that are produced during the deposition process and the subsequent growth in sputtered carbon-doped GeSbTe films is one of the major causes of device failure in PCM with cycling. We found that the size of voids in C15(Ge21Sb36Te43) films increased with increasing annealing temperature and the activation energy for the growth rate of voids was determined to be 2.22 eV. The film density, which is closely related to voids, varies with the deposition temperature and sputtering power used. The lower heat of vaporization of elemental Sb and Te compared to that for elemental Ge and C is a major cause of the low density of the film. It was possible to suppress void formation to a considerable extent by optimizing the deposition conditions, which leads to a dramatic enhancement in cyclic endurance by 2 orders of magnitude in PCM devices prepared at 300°C-300W compared to one prepared at 240°C-500W without change of compositions.

UR - http://www.scopus.com/inward/record.url?scp=84958576749&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84958576749&partnerID=8YFLogxK

U2 - 10.1063/1.4942110

DO - 10.1063/1.4942110

M3 - Article

VL - 6

JO - AIP Advances

JF - AIP Advances

SN - 2158-3226

IS - 2

M1 - 025013

ER -