Enhancement of electron emission from silicon tips by nitrogen doped amorphous carbon coating

Eung Joon Chi, Jae Yeob Shim, Hong Koo Baik

Research output: Contribution to conferencePaper

Abstract

To enhance the emission current of silicon field emitter, it has been coated with nitrogenated amorphous carbon (a-C:N) by helical resonator plasma enhanced chemical vapor deposition. The a-C:N film is amorphous and hydrogenated with about 30 at% hydrogen. Nitrogen is also included in the amorphous network. Nitrogen in the films reduces the optical band gap resulting in more efficient electron transport. The I-V characteristics show good F-N behavior for silicon and a-C:N coated emitters, a-C:N coating enhances significantly the emission current of silicon tips.

Original languageEnglish
Pages210-211
Number of pages2
Publication statusPublished - 1998 Dec 1
EventProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA
Duration: 1998 Jul 191998 Jul 24

Other

OtherProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC
CityAsheville, NC, USA
Period98/7/1998/7/24

Fingerprint

electron emission
coatings
nitrogen
augmentation
carbon
silicon
emitters
resonators
vapor deposition
hydrogen
electrons

All Science Journal Classification (ASJC) codes

  • Surfaces and Interfaces

Cite this

Chi, E. J., Shim, J. Y., & Baik, H. K. (1998). Enhancement of electron emission from silicon tips by nitrogen doped amorphous carbon coating. 210-211. Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, .
Chi, Eung Joon ; Shim, Jae Yeob ; Baik, Hong Koo. / Enhancement of electron emission from silicon tips by nitrogen doped amorphous carbon coating. Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, .2 p.
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abstract = "To enhance the emission current of silicon field emitter, it has been coated with nitrogenated amorphous carbon (a-C:N) by helical resonator plasma enhanced chemical vapor deposition. The a-C:N film is amorphous and hydrogenated with about 30 at{\%} hydrogen. Nitrogen is also included in the amorphous network. Nitrogen in the films reduces the optical band gap resulting in more efficient electron transport. The I-V characteristics show good F-N behavior for silicon and a-C:N coated emitters, a-C:N coating enhances significantly the emission current of silicon tips.",
author = "Chi, {Eung Joon} and Shim, {Jae Yeob} and Baik, {Hong Koo}",
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Chi, EJ, Shim, JY & Baik, HK 1998, 'Enhancement of electron emission from silicon tips by nitrogen doped amorphous carbon coating' Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, 98/7/19 - 98/7/24, pp. 210-211.

Enhancement of electron emission from silicon tips by nitrogen doped amorphous carbon coating. / Chi, Eung Joon; Shim, Jae Yeob; Baik, Hong Koo.

1998. 210-211 Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, .

Research output: Contribution to conferencePaper

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AU - Baik, Hong Koo

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N2 - To enhance the emission current of silicon field emitter, it has been coated with nitrogenated amorphous carbon (a-C:N) by helical resonator plasma enhanced chemical vapor deposition. The a-C:N film is amorphous and hydrogenated with about 30 at% hydrogen. Nitrogen is also included in the amorphous network. Nitrogen in the films reduces the optical band gap resulting in more efficient electron transport. The I-V characteristics show good F-N behavior for silicon and a-C:N coated emitters, a-C:N coating enhances significantly the emission current of silicon tips.

AB - To enhance the emission current of silicon field emitter, it has been coated with nitrogenated amorphous carbon (a-C:N) by helical resonator plasma enhanced chemical vapor deposition. The a-C:N film is amorphous and hydrogenated with about 30 at% hydrogen. Nitrogen is also included in the amorphous network. Nitrogen in the films reduces the optical band gap resulting in more efficient electron transport. The I-V characteristics show good F-N behavior for silicon and a-C:N coated emitters, a-C:N coating enhances significantly the emission current of silicon tips.

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Chi EJ, Shim JY, Baik HK. Enhancement of electron emission from silicon tips by nitrogen doped amorphous carbon coating. 1998. Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, .