Enhancement of electron emission from silicon tips by nitrogen doped amorphous carbon coating

Eung Joon Chi, Jae Yeob Shim, Hong Koo Baik

Research output: Contribution to conferencePaper

Abstract

To enhance the emission current of silicon field emitter, it has been coated with nitrogenated amorphous carbon (a-C:N) by helical resonator plasma enhanced chemical vapor deposition. The a-C:N film is amorphous and hydrogenated with about 30 at% hydrogen. Nitrogen is also included in the amorphous network. Nitrogen in the films reduces the optical band gap resulting in more efficient electron transport. The I-V characteristics show good F-N behavior for silicon and a-C:N coated emitters, a-C:N coating enhances significantly the emission current of silicon tips.

Original languageEnglish
Pages210-211
Number of pages2
Publication statusPublished - 1998 Dec 1
EventProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC - Asheville, NC, USA
Duration: 1998 Jul 191998 Jul 24

Other

OtherProceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC
CityAsheville, NC, USA
Period98/7/1998/7/24

All Science Journal Classification (ASJC) codes

  • Surfaces and Interfaces

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    Chi, E. J., Shim, J. Y., & Baik, H. K. (1998). Enhancement of electron emission from silicon tips by nitrogen doped amorphous carbon coating. 210-211. Paper presented at Proceedings of the 1998 11th International Vacuum Microelectronics Conference, IVMC, Asheville, NC, USA, .