Enhancement of interconnectivity in the channels of pentacene thin-film transistors and its effect on field-effect mobility

Hwa Sung Lee, Do Hwan Kim, Jeong Ho Cho, Yeong Don Park, Jong Soo Kim, Kilwon Cho

Research output: Contribution to journalArticle

56 Citations (Scopus)

Abstract

With the aim of improving the field-effect mobility of transistors by promoting the interconnectivity of the grains in pentacene thin films, deposition conditions of the pentacene molecules using one-step (total thickness of layer 50 nm: 0.1 Ås-1) and two-step (first layer 10 nm: 0.1 Ås-1, second layer 40 nm: 4.0 Ås-1) depositions are controlled. Significantly, it is found that the continuities of the pentacene thin films vary with the deposition conditions of the pentacene molecules. Specifically, a smaller number of voids is observed at the interface for the two-step deposition, which results in field-effect mobilities as high as 1.2 cm2 V-1 s-1; these are higher by more than a factor of two than those of the pentacene films deposited in one step. This remarkable increase in field-effect mobility is due in particular to the interconnectivity of the pentacene grains near the insulator substrate.

Original languageEnglish
Pages (from-to)1859-1864
Number of pages6
JournalAdvanced Functional Materials
Volume16
Issue number14
DOIs
Publication statusPublished - 2006 Sep 18

Fingerprint

Thin film transistors
transistors
augmentation
thin films
Thin films
Molecules
continuity
molecules
voids
Transistors
insulators
pentacene
Substrates

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Lee, Hwa Sung ; Kim, Do Hwan ; Cho, Jeong Ho ; Park, Yeong Don ; Kim, Jong Soo ; Cho, Kilwon. / Enhancement of interconnectivity in the channels of pentacene thin-film transistors and its effect on field-effect mobility. In: Advanced Functional Materials. 2006 ; Vol. 16, No. 14. pp. 1859-1864.
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Enhancement of interconnectivity in the channels of pentacene thin-film transistors and its effect on field-effect mobility. / Lee, Hwa Sung; Kim, Do Hwan; Cho, Jeong Ho; Park, Yeong Don; Kim, Jong Soo; Cho, Kilwon.

In: Advanced Functional Materials, Vol. 16, No. 14, 18.09.2006, p. 1859-1864.

Research output: Contribution to journalArticle

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