An effective method of increasing the sp3 hybridization fraction in sputtered amorphous carbon (a-C) film by the combination of Ar ion bombardment and Si incorporation was presented. It was observed that the incorporated Si in an a-C network breaks the sp2 hybridized bonded ring and promotes the formation of a sp3 hybridized bond. The results showed that the enhancement of the sp3 hybridized bonding characteristic was maximized for an a-C film with 23 at.% of Si and 100-150 V of applied bias voltage.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)