Enhancement of sp3 hybridized C in amorphous carbon films by Ar ion bombardment and Si incorporation

Hae Suk Jung, Hyung-Ho Park, I. R. Mendieta, D. A. Smith

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An effective method of increasing the sp3 hybridization fraction in sputtered amorphous carbon (a-C) film by the combination of Ar ion bombardment and Si incorporation was presented. It was observed that the incorporated Si in an a-C network breaks the sp2 hybridized bonded ring and promotes the formation of a sp3 hybridized bond. The results showed that the enhancement of the sp3 hybridized bonding characteristic was maximized for an a-C film with 23 at.% of Si and 100-150 V of applied bias voltage.

Original languageEnglish
Pages (from-to)4828-4834
Number of pages7
JournalJournal of Applied Physics
Issue number8
Publication statusPublished - 2003 Oct 15


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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