Enhancement of sp3 hybridized C in amorphous carbon films by Ar ion bombardment and Si incorporation

Hae Suk Jung; Hyung Ho Park; I. R. Mendieta; D. A. Smith

doi:10.1063/1.1606511

Enhancement of sp³ hybridized C in amorphous carbon films by Ar ion bombardment and Si incorporation

Hae Suk Jung, Hyung Ho Park, I. R. Mendieta, D. A. Smith

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

An effective method of increasing the sp³ hybridization fraction in sputtered amorphous carbon (a-C) film by the combination of Ar ion bombardment and Si incorporation was presented. It was observed that the incorporated Si in an a-C network breaks the sp² hybridized bonded ring and promotes the formation of a sp³ hybridized bond. The results showed that the enhancement of the sp³ hybridized bonding characteristic was maximized for an a-C film with 23 at.% of Si and 100-150 V of applied bias voltage.

Original language	English
Pages (from-to)	4828-4834
Number of pages	7
Journal	Journal of Applied Physics
Volume	94
Issue number	8
DOIs	https://doi.org/10.1063/1.1606511
Publication status	Published - 2003 Oct 15

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.1606511

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abstract = "An effective method of increasing the sp3 hybridization fraction in sputtered amorphous carbon (a-C) film by the combination of Ar ion bombardment and Si incorporation was presented. It was observed that the incorporated Si in an a-C network breaks the sp2 hybridized bonded ring and promotes the formation of a sp3 hybridized bond. The results showed that the enhancement of the sp3 hybridized bonding characteristic was maximized for an a-C film with 23 at.% of Si and 100-150 V of applied bias voltage.",

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AU - Mendieta, I. R.

AU - Smith, D. A.

PY - 2003/10/15

Y1 - 2003/10/15

N2 - An effective method of increasing the sp3 hybridization fraction in sputtered amorphous carbon (a-C) film by the combination of Ar ion bombardment and Si incorporation was presented. It was observed that the incorporated Si in an a-C network breaks the sp2 hybridized bonded ring and promotes the formation of a sp3 hybridized bond. The results showed that the enhancement of the sp3 hybridized bonding characteristic was maximized for an a-C film with 23 at.% of Si and 100-150 V of applied bias voltage.

AB - An effective method of increasing the sp3 hybridization fraction in sputtered amorphous carbon (a-C) film by the combination of Ar ion bombardment and Si incorporation was presented. It was observed that the incorporated Si in an a-C network breaks the sp2 hybridized bonded ring and promotes the formation of a sp3 hybridized bond. The results showed that the enhancement of the sp3 hybridized bonding characteristic was maximized for an a-C film with 23 at.% of Si and 100-150 V of applied bias voltage.

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