Abstract
An effective method of increasing the sp3 hybridization fraction in sputtered amorphous carbon (a-C) film by the combination of Ar ion bombardment and Si incorporation was presented. It was observed that the incorporated Si in an a-C network breaks the sp2 hybridized bonded ring and promotes the formation of a sp3 hybridized bond. The results showed that the enhancement of the sp3 hybridized bonding characteristic was maximized for an a-C film with 23 at.% of Si and 100-150 V of applied bias voltage.
Original language | English |
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Pages (from-to) | 4828-4834 |
Number of pages | 7 |
Journal | Journal of Applied Physics |
Volume | 94 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2003 Oct 15 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)