Enhancement of sp3 hybridized C in amorphous carbon films by Ar ion bombardment and Si incorporation

Hae Suk Jung; Hyung Ho Park; I. R. Mendieta; D. A. Smith

doi:10.1063/1.1606511

Enhancement of sp³ hybridized C in amorphous carbon films by Ar ion bombardment and Si incorporation

Hae Suk Jung, Hyung Ho Park, I. R. Mendieta, D. A. Smith

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

An effective method of increasing the sp³ hybridization fraction in sputtered amorphous carbon (a-C) film by the combination of Ar ion bombardment and Si incorporation was presented. It was observed that the incorporated Si in an a-C network breaks the sp² hybridized bonded ring and promotes the formation of a sp³ hybridized bond. The results showed that the enhancement of the sp³ hybridized bonding characteristic was maximized for an a-C film with 23 at.% of Si and 100-150 V of applied bias voltage.

Original language	English
Pages (from-to)	4828-4834
Number of pages	7
Journal	Journal of Applied Physics
Volume	94
Issue number	8
DOIs	https://doi.org/10.1063/1.1606511
Publication status	Published - 2003 Oct 15

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.1606511

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@article{1d56c9ffa4964abe9ee36e93d49d8906,

title = "Enhancement of sp3 hybridized C in amorphous carbon films by Ar ion bombardment and Si incorporation",

abstract = "An effective method of increasing the sp3 hybridization fraction in sputtered amorphous carbon (a-C) film by the combination of Ar ion bombardment and Si incorporation was presented. It was observed that the incorporated Si in an a-C network breaks the sp2 hybridized bonded ring and promotes the formation of a sp3 hybridized bond. The results showed that the enhancement of the sp3 hybridized bonding characteristic was maximized for an a-C film with 23 at.% of Si and 100-150 V of applied bias voltage.",

author = "Jung, {Hae Suk} and Park, {Hyung Ho} and Mendieta, {I. R.} and Smith, {D. A.}",

year = "2003",

month = oct,

day = "15",

doi = "10.1063/1.1606511",

language = "English",

volume = "94",

pages = "4828--4834",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "8",

}

TY - JOUR

T1 - Enhancement of sp3 hybridized C in amorphous carbon films by Ar ion bombardment and Si incorporation

AU - Jung, Hae Suk

AU - Park, Hyung Ho

AU - Mendieta, I. R.

AU - Smith, D. A.

PY - 2003/10/15

Y1 - 2003/10/15

N2 - An effective method of increasing the sp3 hybridization fraction in sputtered amorphous carbon (a-C) film by the combination of Ar ion bombardment and Si incorporation was presented. It was observed that the incorporated Si in an a-C network breaks the sp2 hybridized bonded ring and promotes the formation of a sp3 hybridized bond. The results showed that the enhancement of the sp3 hybridized bonding characteristic was maximized for an a-C film with 23 at.% of Si and 100-150 V of applied bias voltage.

AB - An effective method of increasing the sp3 hybridization fraction in sputtered amorphous carbon (a-C) film by the combination of Ar ion bombardment and Si incorporation was presented. It was observed that the incorporated Si in an a-C network breaks the sp2 hybridized bonded ring and promotes the formation of a sp3 hybridized bond. The results showed that the enhancement of the sp3 hybridized bonding characteristic was maximized for an a-C film with 23 at.% of Si and 100-150 V of applied bias voltage.

UR - http://www.scopus.com/inward/record.url?scp=0242272461&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0242272461&partnerID=8YFLogxK

U2 - 10.1063/1.1606511

DO - 10.1063/1.1606511

M3 - Article

AN - SCOPUS:0242272461

VL - 94

SP - 4828

EP - 4834

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

ER -