Abstract
An effective method of increasing the sp3 hybridization fraction in sputtered amorphous carbon (a-C) film by the combination of Ar ion bombardment and Si incorporation was presented. It was observed that the incorporated Si in an a-C network breaks the sp2 hybridized bonded ring and promotes the formation of a sp3 hybridized bond. The results showed that the enhancement of the sp3 hybridized bonding characteristic was maximized for an a-C film with 23 at.% of Si and 100-150 V of applied bias voltage.
| Original language | English |
|---|---|
| Pages (from-to) | 4828-4834 |
| Number of pages | 7 |
| Journal | Journal of Applied Physics |
| Volume | 94 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2003 Oct 15 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Fingerprint Dive into the research topics of 'Enhancement of sp<sup>3</sup> hybridized C in amorphous carbon films by Ar ion bombardment and Si incorporation'. Together they form a unique fingerprint.
Cite this
Jung, H. S., Park, H-H., Mendieta, I. R., & Smith, D. A. (2003). Enhancement of sp3 hybridized C in amorphous carbon films by Ar ion bombardment and Si incorporation. Journal of Applied Physics, 94(8), 4828-4834. https://doi.org/10.1063/1.1606511