Enhancement of Switching Characteristic for p-Type Oxide Semiconductors Using Hypochlorous Acid

Tae Soo Jung, Heesoo Lee, Sung Pyo Park, Hee Jun Kim, Jin Hyeok Lee, Dongwoo Kim, Hyun Jae Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We explored the effects of hypochlorous acid (HClO) oxidation on p-type oxide semiconductors. HClO generates oxygen radicals (O·) (strong reactive oxygen species) that affect the chemical state of p-type copper oxide (CuOx) thin films by reacting with CuOx. On robust oxidation by HClO, the numbers of Cu-O bonds increased and the numbers of copper vacancies serving as hole carriers decreased. In the modified CuOx thin-film transistors (TFTs), switching was evident. The subthreshold swing was 0.70 V/dec, the on-/off-current ratio was 4.86 × 104, and the field effect mobility was 2.83 × 10-3 cm2/V·s. Pristine CuOx TFTs did not exhibit switching.

Original languageEnglish
Pages (from-to)32337-32343
Number of pages7
JournalACS Applied Materials and Interfaces
Volume10
Issue number38
DOIs
Publication statusPublished - 2018 Sep 26

Fingerprint

Hypochlorous Acid
Thin film transistors
Acids
Reactive Oxygen Species
Oxidation
Oxygen
Copper oxides
Oxide films
Vacancies
Copper
Thin films
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Jung, Tae Soo ; Lee, Heesoo ; Park, Sung Pyo ; Kim, Hee Jun ; Lee, Jin Hyeok ; Kim, Dongwoo ; Kim, Hyun Jae. / Enhancement of Switching Characteristic for p-Type Oxide Semiconductors Using Hypochlorous Acid. In: ACS Applied Materials and Interfaces. 2018 ; Vol. 10, No. 38. pp. 32337-32343.
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Enhancement of Switching Characteristic for p-Type Oxide Semiconductors Using Hypochlorous Acid. / Jung, Tae Soo; Lee, Heesoo; Park, Sung Pyo; Kim, Hee Jun; Lee, Jin Hyeok; Kim, Dongwoo; Kim, Hyun Jae.

In: ACS Applied Materials and Interfaces, Vol. 10, No. 38, 26.09.2018, p. 32337-32343.

Research output: Contribution to journalArticle

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T1 - Enhancement of Switching Characteristic for p-Type Oxide Semiconductors Using Hypochlorous Acid

AU - Jung, Tae Soo

AU - Lee, Heesoo

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AU - Kim, Dongwoo

AU - Kim, Hyun Jae

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AB - We explored the effects of hypochlorous acid (HClO) oxidation on p-type oxide semiconductors. HClO generates oxygen radicals (O·) (strong reactive oxygen species) that affect the chemical state of p-type copper oxide (CuOx) thin films by reacting with CuOx. On robust oxidation by HClO, the numbers of Cu-O bonds increased and the numbers of copper vacancies serving as hole carriers decreased. In the modified CuOx thin-film transistors (TFTs), switching was evident. The subthreshold swing was 0.70 V/dec, the on-/off-current ratio was 4.86 × 104, and the field effect mobility was 2.83 × 10-3 cm2/V·s. Pristine CuOx TFTs did not exhibit switching.

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