Enhancement of Switching Characteristic for p-Type Oxide Semiconductors Using Hypochlorous Acid

Tae Soo Jung, Heesoo Lee, Sung Pyo Park, Hee Jun Kim, Jin Hyeok Lee, Dongwoo Kim, Hyun Jae Kim

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


We explored the effects of hypochlorous acid (HClO) oxidation on p-type oxide semiconductors. HClO generates oxygen radicals (O·) (strong reactive oxygen species) that affect the chemical state of p-type copper oxide (CuOx) thin films by reacting with CuOx. On robust oxidation by HClO, the numbers of Cu-O bonds increased and the numbers of copper vacancies serving as hole carriers decreased. In the modified CuOx thin-film transistors (TFTs), switching was evident. The subthreshold swing was 0.70 V/dec, the on-/off-current ratio was 4.86 × 104, and the field effect mobility was 2.83 × 10-3 cm2/V·s. Pristine CuOx TFTs did not exhibit switching.

Original languageEnglish
Pages (from-to)32337-32343
Number of pages7
JournalACS Applied Materials and Interfaces
Issue number38
Publication statusPublished - 2018 Sept 26

Bibliographical note

Funding Information:
This work was supported by LG display and the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MSIT) (No. 2017R1A2B3008719).

Publisher Copyright:
© 2018 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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