We explored the effects of hypochlorous acid (HClO) oxidation on p-type oxide semiconductors. HClO generates oxygen radicals (O·) (strong reactive oxygen species) that affect the chemical state of p-type copper oxide (CuOx) thin films by reacting with CuOx. On robust oxidation by HClO, the numbers of Cu-O bonds increased and the numbers of copper vacancies serving as hole carriers decreased. In the modified CuOx thin-film transistors (TFTs), switching was evident. The subthreshold swing was 0.70 V/dec, the on-/off-current ratio was 4.86 × 104, and the field effect mobility was 2.83 × 10-3 cm2/V·s. Pristine CuOx TFTs did not exhibit switching.
|Number of pages||7|
|Journal||ACS Applied Materials and Interfaces|
|Publication status||Published - 2018 Sept 26|
Bibliographical noteFunding Information:
This work was supported by LG display and the National Research Foundation of Korea (NRF) Grant funded by the Korea government (MSIT) (No. 2017R1A2B3008719).
© 2018 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Materials Science(all)