Enhancement of the thermoelectric performance of Bi0.4Sb 1.6Te3 alloys by in and Ga doping

Kyu Hyoung Lee, Sungwoo Hwang, Byungki Ryu, Kyunghan Ahn, Jongwook Roh, Daejin Yang, Sang Mock Lee, Hyunsik Kim, Sang Il Kim

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


We report an enhancement of the thermoelectric figure of merit in polycrystalline In- and Ga-doped Bi0.4Sb1.6Te3 compounds. Via the controlled doping of In or Ga, the lattice thermal conductivity was effectively reduced by strong point-defect phonon scattering while the power factor was not significantly changed due to the similarity of the density of states near the valence-band maximum between undoped and In- or Ga-doped compositions. An enhanced ZT of 1.2 at 320 K was obtained in 0.5 at.% In-doped Bi0.4Sb1.6Te3 compound by these synergetic effects.

Original languageEnglish
Pages (from-to)1617-1621
Number of pages5
JournalJournal of Electronic Materials
Issue number7
Publication statusPublished - 2013 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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