Enhancement of thermal stability in Ni silicides on Epi-Si1-x Cx by Pt addition

J. H. Yoo; H. Sohn; D. H. Ko; M. H. Cho

doi:10.1149/1.3454216

Enhancement of thermal stability in Ni silicides on Epi-Si_1-x C_x by Pt addition

J. H. Yoo, H. Sohn, D. H. Ko, M. H. Cho

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The thermal stability of nickel silicides from the Ni-Pt alloy on strained epitaxial Si_1-x C_x layers was evaluated. C atoms in the epitaxial Si_1-x C_x layer remain in the Ni (Pt) Si/ Si _1-x C_x interface during Ni(Pt)Si formation. The decrease in interfacial energy by C segregation at the grain boundaries and interfaces enhanced the thermal stability of NiSi. The thermal stability of NiSi was greatly enhanced when Pt was added during the silicidation process. Upon increasing annealing temperatures, the sheet resistance of Ni-Pt (5 and 10 atom %) / Si_0.998C_0.012 decreased to a lower value because a stable Ni(Pt)Si layer is formed on the epitaxial Si_0.998C _0.012 layer. The formation of a stable Ni(Pt)Si phase suppressed the agglomeration of NiSi as well as the formation of a NiSi₂ phase.

Original language	English
Pages (from-to)	H837-H841
Journal	Journal of the Electrochemical Society
Volume	157
Issue number	8
DOIs	https://doi.org/10.1149/1.3454216
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

Access to Document

10.1149/1.3454216

Fingerprint Dive into the research topics of 'Enhancement of thermal stability in Ni silicides on Epi-Si<sub>1-x</sub> C<sub>x</sub> by Pt addition'. Together they form a unique fingerprint.

Cite this

@article{eaed6325d1da4c1aa85333f0eae2a28d,

title = "Enhancement of thermal stability in Ni silicides on Epi-Si1-x Cx by Pt addition",

abstract = "The thermal stability of nickel silicides from the Ni-Pt alloy on strained epitaxial Si1-x Cx layers was evaluated. C atoms in the epitaxial Si1-x Cx layer remain in the Ni (Pt) Si/ Si 1-x Cx interface during Ni(Pt)Si formation. The decrease in interfacial energy by C segregation at the grain boundaries and interfaces enhanced the thermal stability of NiSi. The thermal stability of NiSi was greatly enhanced when Pt was added during the silicidation process. Upon increasing annealing temperatures, the sheet resistance of Ni-Pt (5 and 10 atom %) / Si0.998C0.012 decreased to a lower value because a stable Ni(Pt)Si layer is formed on the epitaxial Si0.998C 0.012 layer. The formation of a stable Ni(Pt)Si phase suppressed the agglomeration of NiSi as well as the formation of a NiSi2 phase.",

author = "Yoo, {J. H.} and H. Sohn and Ko, {D. H.} and Cho, {M. H.}",

year = "2010",

doi = "10.1149/1.3454216",

language = "English",

volume = "157",

pages = "H837--H841",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "8",

}

TY - JOUR

T1 - Enhancement of thermal stability in Ni silicides on Epi-Si1-x Cx by Pt addition

AU - Yoo, J. H.

AU - Sohn, H.

AU - Ko, D. H.

AU - Cho, M. H.

PY - 2010

Y1 - 2010

N2 - The thermal stability of nickel silicides from the Ni-Pt alloy on strained epitaxial Si1-x Cx layers was evaluated. C atoms in the epitaxial Si1-x Cx layer remain in the Ni (Pt) Si/ Si 1-x Cx interface during Ni(Pt)Si formation. The decrease in interfacial energy by C segregation at the grain boundaries and interfaces enhanced the thermal stability of NiSi. The thermal stability of NiSi was greatly enhanced when Pt was added during the silicidation process. Upon increasing annealing temperatures, the sheet resistance of Ni-Pt (5 and 10 atom %) / Si0.998C0.012 decreased to a lower value because a stable Ni(Pt)Si layer is formed on the epitaxial Si0.998C 0.012 layer. The formation of a stable Ni(Pt)Si phase suppressed the agglomeration of NiSi as well as the formation of a NiSi2 phase.

AB - The thermal stability of nickel silicides from the Ni-Pt alloy on strained epitaxial Si1-x Cx layers was evaluated. C atoms in the epitaxial Si1-x Cx layer remain in the Ni (Pt) Si/ Si 1-x Cx interface during Ni(Pt)Si formation. The decrease in interfacial energy by C segregation at the grain boundaries and interfaces enhanced the thermal stability of NiSi. The thermal stability of NiSi was greatly enhanced when Pt was added during the silicidation process. Upon increasing annealing temperatures, the sheet resistance of Ni-Pt (5 and 10 atom %) / Si0.998C0.012 decreased to a lower value because a stable Ni(Pt)Si layer is formed on the epitaxial Si0.998C 0.012 layer. The formation of a stable Ni(Pt)Si phase suppressed the agglomeration of NiSi as well as the formation of a NiSi2 phase.

UR - http://www.scopus.com/inward/record.url?scp=77954700348&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954700348&partnerID=8YFLogxK

U2 - 10.1149/1.3454216

DO - 10.1149/1.3454216

M3 - Article

AN - SCOPUS:77954700348

VL - 157

SP - H837-H841

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 8

ER -