Enhancement of thermal stability in Ni silicides on Epi-Si1-x Cx by Pt addition

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The thermal stability of nickel silicides from the Ni-Pt alloy on strained epitaxial Si1-x Cx layers was evaluated. C atoms in the epitaxial Si1-x Cx layer remain in the Ni (Pt) Si/ Si 1-x Cx interface during Ni(Pt)Si formation. The decrease in interfacial energy by C segregation at the grain boundaries and interfaces enhanced the thermal stability of NiSi. The thermal stability of NiSi was greatly enhanced when Pt was added during the silicidation process. Upon increasing annealing temperatures, the sheet resistance of Ni-Pt (5 and 10 atom %) / Si0.998C0.012 decreased to a lower value because a stable Ni(Pt)Si layer is formed on the epitaxial Si0.998C 0.012 layer. The formation of a stable Ni(Pt)Si phase suppressed the agglomeration of NiSi as well as the formation of a NiSi2 phase.

Original languageEnglish
Pages (from-to)H837-H841
JournalJournal of the Electrochemical Society
Volume157
Issue number8
DOIs
Publication statusPublished - 2010 Jul 23

Fingerprint

Silicides
silicides
Thermodynamic stability
thermal stability
augmentation
Atoms
Sheet resistance
Nickel
Interfacial energy
interfacial energy
Grain boundaries
Agglomeration
agglomeration
Annealing
atoms
grain boundaries
nickel
annealing
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

@article{eaed6325d1da4c1aa85333f0eae2a28d,
title = "Enhancement of thermal stability in Ni silicides on Epi-Si1-x Cx by Pt addition",
abstract = "The thermal stability of nickel silicides from the Ni-Pt alloy on strained epitaxial Si1-x Cx layers was evaluated. C atoms in the epitaxial Si1-x Cx layer remain in the Ni (Pt) Si/ Si 1-x Cx interface during Ni(Pt)Si formation. The decrease in interfacial energy by C segregation at the grain boundaries and interfaces enhanced the thermal stability of NiSi. The thermal stability of NiSi was greatly enhanced when Pt was added during the silicidation process. Upon increasing annealing temperatures, the sheet resistance of Ni-Pt (5 and 10 atom {\%}) / Si0.998C0.012 decreased to a lower value because a stable Ni(Pt)Si layer is formed on the epitaxial Si0.998C 0.012 layer. The formation of a stable Ni(Pt)Si phase suppressed the agglomeration of NiSi as well as the formation of a NiSi2 phase.",
author = "Yoo, {J. H.} and H. Sohn and Ko, {D. H.} and Cho, {M. H.}",
year = "2010",
month = "7",
day = "23",
doi = "10.1149/1.3454216",
language = "English",
volume = "157",
pages = "H837--H841",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "8",

}

Enhancement of thermal stability in Ni silicides on Epi-Si1-x Cx by Pt addition. / Yoo, J. H.; Sohn, H.; Ko, D. H.; Cho, M. H.

In: Journal of the Electrochemical Society, Vol. 157, No. 8, 23.07.2010, p. H837-H841.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhancement of thermal stability in Ni silicides on Epi-Si1-x Cx by Pt addition

AU - Yoo, J. H.

AU - Sohn, H.

AU - Ko, D. H.

AU - Cho, M. H.

PY - 2010/7/23

Y1 - 2010/7/23

N2 - The thermal stability of nickel silicides from the Ni-Pt alloy on strained epitaxial Si1-x Cx layers was evaluated. C atoms in the epitaxial Si1-x Cx layer remain in the Ni (Pt) Si/ Si 1-x Cx interface during Ni(Pt)Si formation. The decrease in interfacial energy by C segregation at the grain boundaries and interfaces enhanced the thermal stability of NiSi. The thermal stability of NiSi was greatly enhanced when Pt was added during the silicidation process. Upon increasing annealing temperatures, the sheet resistance of Ni-Pt (5 and 10 atom %) / Si0.998C0.012 decreased to a lower value because a stable Ni(Pt)Si layer is formed on the epitaxial Si0.998C 0.012 layer. The formation of a stable Ni(Pt)Si phase suppressed the agglomeration of NiSi as well as the formation of a NiSi2 phase.

AB - The thermal stability of nickel silicides from the Ni-Pt alloy on strained epitaxial Si1-x Cx layers was evaluated. C atoms in the epitaxial Si1-x Cx layer remain in the Ni (Pt) Si/ Si 1-x Cx interface during Ni(Pt)Si formation. The decrease in interfacial energy by C segregation at the grain boundaries and interfaces enhanced the thermal stability of NiSi. The thermal stability of NiSi was greatly enhanced when Pt was added during the silicidation process. Upon increasing annealing temperatures, the sheet resistance of Ni-Pt (5 and 10 atom %) / Si0.998C0.012 decreased to a lower value because a stable Ni(Pt)Si layer is formed on the epitaxial Si0.998C 0.012 layer. The formation of a stable Ni(Pt)Si phase suppressed the agglomeration of NiSi as well as the formation of a NiSi2 phase.

UR - http://www.scopus.com/inward/record.url?scp=77954700348&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954700348&partnerID=8YFLogxK

U2 - 10.1149/1.3454216

DO - 10.1149/1.3454216

M3 - Article

AN - SCOPUS:77954700348

VL - 157

SP - H837-H841

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 8

ER -