Abstract
The thermal stability of nickel silicides from the Ni-Pt alloy on strained epitaxial Si1-x Cx layers was evaluated. C atoms in the epitaxial Si1-x Cx layer remain in the Ni (Pt) Si/ Si 1-x Cx interface during Ni(Pt)Si formation. The decrease in interfacial energy by C segregation at the grain boundaries and interfaces enhanced the thermal stability of NiSi. The thermal stability of NiSi was greatly enhanced when Pt was added during the silicidation process. Upon increasing annealing temperatures, the sheet resistance of Ni-Pt (5 and 10 atom %) / Si0.998C0.012 decreased to a lower value because a stable Ni(Pt)Si layer is formed on the epitaxial Si0.998C 0.012 layer. The formation of a stable Ni(Pt)Si phase suppressed the agglomeration of NiSi as well as the formation of a NiSi2 phase.
| Original language | English |
|---|---|
| Pages (from-to) | H837-H841 |
| Journal | Journal of the Electrochemical Society |
| Volume | 157 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2010 Jul 23 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
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Enhancement of thermal stability in Ni silicides on Epi-Si1-x Cx by Pt addition. / Yoo, J. H.; Sohn, H.; Ko, D. H.; Cho, M. H.
In: Journal of the Electrochemical Society, Vol. 157, No. 8, 23.07.2010, p. H837-H841.Research output: Contribution to journal › Article
TY - JOUR
T1 - Enhancement of thermal stability in Ni silicides on Epi-Si1-x Cx by Pt addition
AU - Yoo, J. H.
AU - Sohn, H.
AU - Ko, D. H.
AU - Cho, M. H.
PY - 2010/7/23
Y1 - 2010/7/23
N2 - The thermal stability of nickel silicides from the Ni-Pt alloy on strained epitaxial Si1-x Cx layers was evaluated. C atoms in the epitaxial Si1-x Cx layer remain in the Ni (Pt) Si/ Si 1-x Cx interface during Ni(Pt)Si formation. The decrease in interfacial energy by C segregation at the grain boundaries and interfaces enhanced the thermal stability of NiSi. The thermal stability of NiSi was greatly enhanced when Pt was added during the silicidation process. Upon increasing annealing temperatures, the sheet resistance of Ni-Pt (5 and 10 atom %) / Si0.998C0.012 decreased to a lower value because a stable Ni(Pt)Si layer is formed on the epitaxial Si0.998C 0.012 layer. The formation of a stable Ni(Pt)Si phase suppressed the agglomeration of NiSi as well as the formation of a NiSi2 phase.
AB - The thermal stability of nickel silicides from the Ni-Pt alloy on strained epitaxial Si1-x Cx layers was evaluated. C atoms in the epitaxial Si1-x Cx layer remain in the Ni (Pt) Si/ Si 1-x Cx interface during Ni(Pt)Si formation. The decrease in interfacial energy by C segregation at the grain boundaries and interfaces enhanced the thermal stability of NiSi. The thermal stability of NiSi was greatly enhanced when Pt was added during the silicidation process. Upon increasing annealing temperatures, the sheet resistance of Ni-Pt (5 and 10 atom %) / Si0.998C0.012 decreased to a lower value because a stable Ni(Pt)Si layer is formed on the epitaxial Si0.998C 0.012 layer. The formation of a stable Ni(Pt)Si phase suppressed the agglomeration of NiSi as well as the formation of a NiSi2 phase.
UR - http://www.scopus.com/inward/record.url?scp=77954700348&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77954700348&partnerID=8YFLogxK
U2 - 10.1149/1.3454216
DO - 10.1149/1.3454216
M3 - Article
AN - SCOPUS:77954700348
VL - 157
SP - H837-H841
JO - Journal of the Electrochemical Society
JF - Journal of the Electrochemical Society
SN - 0013-4651
IS - 8
ER -