Enhancement of thermal stability in Ni silicides on Epi-Si1-x Cx by Pt addition

J. H. Yoo; H. Sohn; D. H. Ko; M. H. Cho

doi:10.1149/1.3454216

Enhancement of thermal stability in Ni silicides on Epi-Si_1-x C_x by Pt addition

J. H. Yoo, H. Sohn, D. H. Ko, M. H. Cho

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

The thermal stability of nickel silicides from the Ni-Pt alloy on strained epitaxial Si_1-x C_x layers was evaluated. C atoms in the epitaxial Si_1-x C_x layer remain in the Ni (Pt) Si/ Si _1-x C_x interface during Ni(Pt)Si formation. The decrease in interfacial energy by C segregation at the grain boundaries and interfaces enhanced the thermal stability of NiSi. The thermal stability of NiSi was greatly enhanced when Pt was added during the silicidation process. Upon increasing annealing temperatures, the sheet resistance of Ni-Pt (5 and 10 atom %) / Si_0.998C_0.012 decreased to a lower value because a stable Ni(Pt)Si layer is formed on the epitaxial Si_0.998C _0.012 layer. The formation of a stable Ni(Pt)Si phase suppressed the agglomeration of NiSi as well as the formation of a NiSi₂ phase.

Original language	English
Pages (from-to)	H837-H841
Journal	Journal of the Electrochemical Society
Volume	157
Issue number	8
DOIs	https://doi.org/10.1149/1.3454216
Publication status	Published - 2010 Jul 23

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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Yoo, J. H., Sohn, H., Ko, D. H., & Cho, M. H. (2010). Enhancement of thermal stability in Ni silicides on Epi-Si_1-x C_x by Pt addition. Journal of the Electrochemical Society, 157(8), H837-H841. https://doi.org/10.1149/1.3454216

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abstract = "The thermal stability of nickel silicides from the Ni-Pt alloy on strained epitaxial Si1-x Cx layers was evaluated. C atoms in the epitaxial Si1-x Cx layer remain in the Ni (Pt) Si/ Si 1-x Cx interface during Ni(Pt)Si formation. The decrease in interfacial energy by C segregation at the grain boundaries and interfaces enhanced the thermal stability of NiSi. The thermal stability of NiSi was greatly enhanced when Pt was added during the silicidation process. Upon increasing annealing temperatures, the sheet resistance of Ni-Pt (5 and 10 atom %) / Si0.998C0.012 decreased to a lower value because a stable Ni(Pt)Si layer is formed on the epitaxial Si0.998C 0.012 layer. The formation of a stable Ni(Pt)Si phase suppressed the agglomeration of NiSi as well as the formation of a NiSi2 phase.",

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AU - Yoo, J. H.

AU - Sohn, H.

AU - Ko, D. H.

AU - Cho, M. H.

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N2 - The thermal stability of nickel silicides from the Ni-Pt alloy on strained epitaxial Si1-x Cx layers was evaluated. C atoms in the epitaxial Si1-x Cx layer remain in the Ni (Pt) Si/ Si 1-x Cx interface during Ni(Pt)Si formation. The decrease in interfacial energy by C segregation at the grain boundaries and interfaces enhanced the thermal stability of NiSi. The thermal stability of NiSi was greatly enhanced when Pt was added during the silicidation process. Upon increasing annealing temperatures, the sheet resistance of Ni-Pt (5 and 10 atom %) / Si0.998C0.012 decreased to a lower value because a stable Ni(Pt)Si layer is formed on the epitaxial Si0.998C 0.012 layer. The formation of a stable Ni(Pt)Si phase suppressed the agglomeration of NiSi as well as the formation of a NiSi2 phase.

AB - The thermal stability of nickel silicides from the Ni-Pt alloy on strained epitaxial Si1-x Cx layers was evaluated. C atoms in the epitaxial Si1-x Cx layer remain in the Ni (Pt) Si/ Si 1-x Cx interface during Ni(Pt)Si formation. The decrease in interfacial energy by C segregation at the grain boundaries and interfaces enhanced the thermal stability of NiSi. The thermal stability of NiSi was greatly enhanced when Pt was added during the silicidation process. Upon increasing annealing temperatures, the sheet resistance of Ni-Pt (5 and 10 atom %) / Si0.998C0.012 decreased to a lower value because a stable Ni(Pt)Si layer is formed on the epitaxial Si0.998C 0.012 layer. The formation of a stable Ni(Pt)Si phase suppressed the agglomeration of NiSi as well as the formation of a NiSi2 phase.

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