Abstract
Introducing nanoinclusions in thermoelectric (TE) materials is expected to lower the lattice thermal conductivity by intensifying the phonon scattering effect, thus enhancing their TE figure of merit ZT. We report a novel method of fabricating Bi 0.5Sb 1.5Te 3 nanocomposite with nanoscale metal particles by using metal acetate precursor, which is low cost and facile to scale up for mass production. Ag and Cu particles of ∼40 nm were successfully near-monodispersed at grain boundaries of Bi 0.5Sb 1.5Te 3 matrix. The well-dispersed metal nanoparticles reduce the lattice thermal conductivity extensively, while enhancing the power factor. Consequently, ZT was enhanced by more than 25% near room temperature and by more than 300% at 520 K compared with a Bi 0.5Sb 1.5Te 3 reference sample. The peak ZT of 1.35 was achieved at 400 K for 0.1 wt.% Cu-decorated Bi 0.5Sb 1.5Te 3.
| Original language | English |
|---|---|
| Pages (from-to) | 1165-1169 |
| Number of pages | 5 |
| Journal | Journal of Electronic Materials |
| Volume | 41 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2012 Jun 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Enhancement of thermoelectric figure of merit for Bi 0.5Sb 1.5Te 3 by metal nanoparticle decoration. / Lee, Kyu Hyoung; Kim, Hyun Sik; Kim, Sang Il; Lee, Eun Sung; Lee, Sang Mock; Rhyee, Jong Soo; Jung, Jae Yong; Kim, Il Ho; Wang, Yifeng; Koumoto, Kunihito.
In: Journal of Electronic Materials, Vol. 41, No. 6, 01.06.2012, p. 1165-1169.Research output: Contribution to journal › Article
TY - JOUR
T1 - Enhancement of thermoelectric figure of merit for Bi 0.5Sb 1.5Te 3 by metal nanoparticle decoration
AU - Lee, Kyu Hyoung
AU - Kim, Hyun Sik
AU - Kim, Sang Il
AU - Lee, Eun Sung
AU - Lee, Sang Mock
AU - Rhyee, Jong Soo
AU - Jung, Jae Yong
AU - Kim, Il Ho
AU - Wang, Yifeng
AU - Koumoto, Kunihito
PY - 2012/6/1
Y1 - 2012/6/1
N2 - Introducing nanoinclusions in thermoelectric (TE) materials is expected to lower the lattice thermal conductivity by intensifying the phonon scattering effect, thus enhancing their TE figure of merit ZT. We report a novel method of fabricating Bi 0.5Sb 1.5Te 3 nanocomposite with nanoscale metal particles by using metal acetate precursor, which is low cost and facile to scale up for mass production. Ag and Cu particles of ∼40 nm were successfully near-monodispersed at grain boundaries of Bi 0.5Sb 1.5Te 3 matrix. The well-dispersed metal nanoparticles reduce the lattice thermal conductivity extensively, while enhancing the power factor. Consequently, ZT was enhanced by more than 25% near room temperature and by more than 300% at 520 K compared with a Bi 0.5Sb 1.5Te 3 reference sample. The peak ZT of 1.35 was achieved at 400 K for 0.1 wt.% Cu-decorated Bi 0.5Sb 1.5Te 3.
AB - Introducing nanoinclusions in thermoelectric (TE) materials is expected to lower the lattice thermal conductivity by intensifying the phonon scattering effect, thus enhancing their TE figure of merit ZT. We report a novel method of fabricating Bi 0.5Sb 1.5Te 3 nanocomposite with nanoscale metal particles by using metal acetate precursor, which is low cost and facile to scale up for mass production. Ag and Cu particles of ∼40 nm were successfully near-monodispersed at grain boundaries of Bi 0.5Sb 1.5Te 3 matrix. The well-dispersed metal nanoparticles reduce the lattice thermal conductivity extensively, while enhancing the power factor. Consequently, ZT was enhanced by more than 25% near room temperature and by more than 300% at 520 K compared with a Bi 0.5Sb 1.5Te 3 reference sample. The peak ZT of 1.35 was achieved at 400 K for 0.1 wt.% Cu-decorated Bi 0.5Sb 1.5Te 3.
UR - http://www.scopus.com/inward/record.url?scp=84862788720&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84862788720&partnerID=8YFLogxK
U2 - 10.1007/s11664-012-1913-0
DO - 10.1007/s11664-012-1913-0
M3 - Article
AN - SCOPUS:84862788720
VL - 41
SP - 1165
EP - 1169
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 6
ER -