Enhancing crystallinity of C60 layer by thickness-control of underneath pentacene layer for high mobility C60/pentacene ambipolar transistors

Kwangseok Ahn, Jong Beom Kim, Hyunjun Park, Hyunjung Kim, Moo Hyung Lee, Beom Joon Kim, Jeong Ho Cho, Moon Sung Kang, Dong Ryeol Lee

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

We present systematic control of the crystallinity and electrical transport properties of C60 films that are deposited onto pentacene layers, based on simple tuning of the underneath pentacene layer thickness. With increasing the pentacene layer thickness from 0 to 2 monolayers, we observed improvement in crystallinity and grain size of the C60 layer, which led to dramatic enhancement in electron conduction. Also, hole transport in this bilayer structure could be generated when the thickness of the pentacene layer was above one monolayer. The resulting ambipolar transport thin-film transistors yielded electron and hole mobilities as high as 2.8 and 0.3 cm2 V-1 s-1, respectively, and complementary inverters with gain value above 20.

Original languageEnglish
Article number043306
JournalApplied Physics Letters
Volume102
Issue number4
DOIs
Publication statusPublished - 2013 Jan 28

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crystallinity
transistors
inverters
hole mobility
electron mobility
conduction electrons
transport properties
grain size
tuning
augmentation
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Ahn, Kwangseok ; Beom Kim, Jong ; Park, Hyunjun ; Kim, Hyunjung ; Hyung Lee, Moo ; Joon Kim, Beom ; Ho Cho, Jeong ; Sung Kang, Moon ; Lee, Dong Ryeol. / Enhancing crystallinity of C60 layer by thickness-control of underneath pentacene layer for high mobility C60/pentacene ambipolar transistors. In: Applied Physics Letters. 2013 ; Vol. 102, No. 4.
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Enhancing crystallinity of C60 layer by thickness-control of underneath pentacene layer for high mobility C60/pentacene ambipolar transistors. / Ahn, Kwangseok; Beom Kim, Jong; Park, Hyunjun; Kim, Hyunjung; Hyung Lee, Moo; Joon Kim, Beom; Ho Cho, Jeong; Sung Kang, Moon; Lee, Dong Ryeol.

In: Applied Physics Letters, Vol. 102, No. 4, 043306, 28.01.2013.

Research output: Contribution to journalArticle

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AU - Ahn, Kwangseok

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AU - Hyung Lee, Moo

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