Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping

Taehoon Sung, Kyung Park, Jong Heon Kim, Hyun Woo Park, Pilsang Yun, Jiyong Non, Seok Woo Lee, Kwon Shik Park, Soo Young Yoon, In Byeong Kang, Kwun Bum Chung, Hyun Suk Kim, Jang Yeon Kwon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Device reliability and electrical properties of the a-IGZO Thin-film Transistors (TFTs) were analyzed in relation to the amount of nitrogen incorporated in the a-IGZO channel. The reliability of the a-IGZO TFTs was enhanced owing to the incorporated nitrogen, and the corresponding mechanism was studied by simulation and experiment.

Original languageEnglish
Title of host publication25th International Display Workshops, IDW 2018
PublisherInternational Display Workshops
Pages287-290
Number of pages4
ISBN (Electronic)9781510883918
Publication statusPublished - 2018 Jan 1
Event25th International Display Workshops, IDW 2018 - Nagoya, Japan
Duration: 2018 Dec 122018 Dec 14

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Conference

Conference25th International Display Workshops, IDW 2018
CountryJapan
CityNagoya
Period18/12/1218/12/14

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

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  • Cite this

    Sung, T., Park, K., Kim, J. H., Park, H. W., Yun, P., Non, J., Lee, S. W., Park, K. S., Yoon, S. Y., Kang, I. B., Chung, K. B., Kim, H. S., & Kwon, J. Y. (2018). Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping. In 25th International Display Workshops, IDW 2018 (pp. 287-290). (Proceedings of the International Display Workshops; Vol. 1). International Display Workshops.