Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping

Taehoon Sung, Kyung Park, Jong Heon Kim, Hyun Woo Park, Pilsang Yun, Jiyong Non, Seok Woo Lee, Kwon Shik Park, Soo Young Yoon, In Byeong Kang, Kwun Bum Chung, Hyun Suk Kim, Jang Yeon Kwon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Device reliability and electrical properties of the a-IGZO Thin-film Transistors (TFTs) were analyzed in relation to the amount of nitrogen incorporated in the a-IGZO channel. The reliability of the a-IGZO TFTs was enhanced owing to the incorporated nitrogen, and the corresponding mechanism was studied by simulation and experiment.

Original languageEnglish
Title of host publication25th International Display Workshops, IDW 2018
PublisherInternational Display Workshops
Pages287-290
Number of pages4
ISBN (Electronic)9781510883918
Publication statusPublished - 2018 Jan 1
Event25th International Display Workshops, IDW 2018 - Nagoya, Japan
Duration: 2018 Dec 122018 Dec 14

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Conference

Conference25th International Display Workshops, IDW 2018
CountryJapan
CityNagoya
Period18/12/1218/12/14

Fingerprint

Thin film transistors
Nitrogen
Doping (additives)
Electric properties
Equipment and Supplies
Experiments

All Science Journal Classification (ASJC) codes

  • Computer Vision and Pattern Recognition
  • Human-Computer Interaction
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging

Cite this

Sung, T., Park, K., Kim, J. H., Park, H. W., Yun, P., Non, J., ... Kwon, J. Y. (2018). Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping. In 25th International Display Workshops, IDW 2018 (pp. 287-290). (Proceedings of the International Display Workshops; Vol. 1). International Display Workshops.
Sung, Taehoon ; Park, Kyung ; Kim, Jong Heon ; Park, Hyun Woo ; Yun, Pilsang ; Non, Jiyong ; Lee, Seok Woo ; Park, Kwon Shik ; Yoon, Soo Young ; Kang, In Byeong ; Chung, Kwun Bum ; Kim, Hyun Suk ; Kwon, Jang Yeon. / Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping. 25th International Display Workshops, IDW 2018. International Display Workshops, 2018. pp. 287-290 (Proceedings of the International Display Workshops).
@inproceedings{3edcd6af41e84fc89e6312a5d1912be1,
title = "Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping",
abstract = "Device reliability and electrical properties of the a-IGZO Thin-film Transistors (TFTs) were analyzed in relation to the amount of nitrogen incorporated in the a-IGZO channel. The reliability of the a-IGZO TFTs was enhanced owing to the incorporated nitrogen, and the corresponding mechanism was studied by simulation and experiment.",
author = "Taehoon Sung and Kyung Park and Kim, {Jong Heon} and Park, {Hyun Woo} and Pilsang Yun and Jiyong Non and Lee, {Seok Woo} and Park, {Kwon Shik} and Yoon, {Soo Young} and Kang, {In Byeong} and Chung, {Kwun Bum} and Kim, {Hyun Suk} and Kwon, {Jang Yeon}",
year = "2018",
month = "1",
day = "1",
language = "English",
series = "Proceedings of the International Display Workshops",
publisher = "International Display Workshops",
pages = "287--290",
booktitle = "25th International Display Workshops, IDW 2018",

}

Sung, T, Park, K, Kim, JH, Park, HW, Yun, P, Non, J, Lee, SW, Park, KS, Yoon, SY, Kang, IB, Chung, KB, Kim, HS & Kwon, JY 2018, Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping. in 25th International Display Workshops, IDW 2018. Proceedings of the International Display Workshops, vol. 1, International Display Workshops, pp. 287-290, 25th International Display Workshops, IDW 2018, Nagoya, Japan, 18/12/12.

Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping. / Sung, Taehoon; Park, Kyung; Kim, Jong Heon; Park, Hyun Woo; Yun, Pilsang; Non, Jiyong; Lee, Seok Woo; Park, Kwon Shik; Yoon, Soo Young; Kang, In Byeong; Chung, Kwun Bum; Kim, Hyun Suk; Kwon, Jang Yeon.

25th International Display Workshops, IDW 2018. International Display Workshops, 2018. p. 287-290 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping

AU - Sung, Taehoon

AU - Park, Kyung

AU - Kim, Jong Heon

AU - Park, Hyun Woo

AU - Yun, Pilsang

AU - Non, Jiyong

AU - Lee, Seok Woo

AU - Park, Kwon Shik

AU - Yoon, Soo Young

AU - Kang, In Byeong

AU - Chung, Kwun Bum

AU - Kim, Hyun Suk

AU - Kwon, Jang Yeon

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Device reliability and electrical properties of the a-IGZO Thin-film Transistors (TFTs) were analyzed in relation to the amount of nitrogen incorporated in the a-IGZO channel. The reliability of the a-IGZO TFTs was enhanced owing to the incorporated nitrogen, and the corresponding mechanism was studied by simulation and experiment.

AB - Device reliability and electrical properties of the a-IGZO Thin-film Transistors (TFTs) were analyzed in relation to the amount of nitrogen incorporated in the a-IGZO channel. The reliability of the a-IGZO TFTs was enhanced owing to the incorporated nitrogen, and the corresponding mechanism was studied by simulation and experiment.

UR - http://www.scopus.com/inward/record.url?scp=85072102490&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85072102490&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:85072102490

T3 - Proceedings of the International Display Workshops

SP - 287

EP - 290

BT - 25th International Display Workshops, IDW 2018

PB - International Display Workshops

ER -

Sung T, Park K, Kim JH, Park HW, Yun P, Non J et al. Enhancing reliability of amorphous In-Ga-Zn-O thin film transistors by nitrogen doping. In 25th International Display Workshops, IDW 2018. International Display Workshops. 2018. p. 287-290. (Proceedings of the International Display Workshops).