Enhancing the ambient-enduring performance of pentacene thin-film transistors by SnO2-encapsulation

Woo Jin Kim, Won Hoe Koo, Sung Jin Jo, Chang Su Kim, Hong Koo Baik, Jiyoul Lee, Seongil Im

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Pentacene thin-film transistors (TFTs) encapsulated with a transparent SnO2 thin-film prepared by ion-beam-assisted deposition (IBAD) were fabricated. We deposited a thermally evaporated 100 nm SnO2 film on a pentacene TFT prior to IBAD as a buffer layer. After encapsulation, our TFT showed initial degradation in terms of field-effect mobility (from 0.62 to 0.5 cm2/V s). However, the mobility of 0.5 cm2/V s was sustained up to 1 month in air and before degrading to 0.35 cm2/V, which is but three times higher than that of a reference TFT without no encapsulation treatment. Under the SnO2 encapsulation, on/off current ratio was also maintained at over 105 which was initially ∼ 106, while the unprotected device displayed less than ∼ 104. Our work demonstrates that the IBAD SnO2 encapsulation is a promising technique for long-term protection of a pentacene TFT.

Original languageEnglish
Pages (from-to)G341-G344
JournalElectrochemical and Solid-State Letters
Volume8
Issue number12
DOIs
Publication statusPublished - 2005 Dec 5

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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