Enhancing the breakdown voltages of Au/n-Si Schottky diodes by boron ion beam-induced edge termination

M. H. Joo, K. M. Park, Woo-Young Choi, J. H. Song, Seongil Im

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6 Citations (Scopus)

Abstract

Boron ion implantation for edge termination of Au/n-Si Schottky diode has been studied to enhance the breakdown voltages of the diodes. Ion energies of 30 and 50 keV were adopted to achieve edge-terminated Schottky diodes. Four doses of 1 × 1013, 1 × 1014, 1 × 1015 and 1 × 1016 B cm-2 were used for each energy. The Schottky diodes with edge termination show much higher breakdown voltages than the diodes without edge termination if the ion dose is controlled. For instance the diodes treated with low doses achieve high breakdown voltages while the diodes with high doses of 1 × 1015 and 1 × 1016 B cm-2 easily fail at low voltages showing early breakdown and high current leakage. According to the results from current-voltage (I-V), the current leakage is reasoned to result from deep level defects introduced by B ion implantation and the leakage at a reverse bias of -40 V is maintained low up to an elevated temperature of 160°C.

Original languageEnglish
Pages (from-to)399-403
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume168
Issue number3
DOIs
Publication statusPublished - 2000 Jan 1

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Schottky diodes
Electric breakdown
electrical faults
Ion beams
Boron
Diodes
boron
ion beams
diodes
dosage
leakage
ion implantation
Ion implantation
Leakage currents
low voltage
high current
ions
breakdown
Ions
Electric potential

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

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title = "Enhancing the breakdown voltages of Au/n-Si Schottky diodes by boron ion beam-induced edge termination",
abstract = "Boron ion implantation for edge termination of Au/n-Si Schottky diode has been studied to enhance the breakdown voltages of the diodes. Ion energies of 30 and 50 keV were adopted to achieve edge-terminated Schottky diodes. Four doses of 1 × 1013, 1 × 1014, 1 × 1015 and 1 × 1016 B cm-2 were used for each energy. The Schottky diodes with edge termination show much higher breakdown voltages than the diodes without edge termination if the ion dose is controlled. For instance the diodes treated with low doses achieve high breakdown voltages while the diodes with high doses of 1 × 1015 and 1 × 1016 B cm-2 easily fail at low voltages showing early breakdown and high current leakage. According to the results from current-voltage (I-V), the current leakage is reasoned to result from deep level defects introduced by B ion implantation and the leakage at a reverse bias of -40 V is maintained low up to an elevated temperature of 160°C.",
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T1 - Enhancing the breakdown voltages of Au/n-Si Schottky diodes by boron ion beam-induced edge termination

AU - Joo, M. H.

AU - Park, K. M.

AU - Choi, Woo-Young

AU - Song, J. H.

AU - Im, Seongil

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Boron ion implantation for edge termination of Au/n-Si Schottky diode has been studied to enhance the breakdown voltages of the diodes. Ion energies of 30 and 50 keV were adopted to achieve edge-terminated Schottky diodes. Four doses of 1 × 1013, 1 × 1014, 1 × 1015 and 1 × 1016 B cm-2 were used for each energy. The Schottky diodes with edge termination show much higher breakdown voltages than the diodes without edge termination if the ion dose is controlled. For instance the diodes treated with low doses achieve high breakdown voltages while the diodes with high doses of 1 × 1015 and 1 × 1016 B cm-2 easily fail at low voltages showing early breakdown and high current leakage. According to the results from current-voltage (I-V), the current leakage is reasoned to result from deep level defects introduced by B ion implantation and the leakage at a reverse bias of -40 V is maintained low up to an elevated temperature of 160°C.

AB - Boron ion implantation for edge termination of Au/n-Si Schottky diode has been studied to enhance the breakdown voltages of the diodes. Ion energies of 30 and 50 keV were adopted to achieve edge-terminated Schottky diodes. Four doses of 1 × 1013, 1 × 1014, 1 × 1015 and 1 × 1016 B cm-2 were used for each energy. The Schottky diodes with edge termination show much higher breakdown voltages than the diodes without edge termination if the ion dose is controlled. For instance the diodes treated with low doses achieve high breakdown voltages while the diodes with high doses of 1 × 1015 and 1 × 1016 B cm-2 easily fail at low voltages showing early breakdown and high current leakage. According to the results from current-voltage (I-V), the current leakage is reasoned to result from deep level defects introduced by B ion implantation and the leakage at a reverse bias of -40 V is maintained low up to an elevated temperature of 160°C.

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