Enhancing the retention properties of ZnO memory transistor by modifying the channel/ferroelectric polymer interface

C. H. Park; Gyubaek Lee; Kwang H. Lee; Seongil Im; Byoung H. Lee; Myung M. Sung

doi:10.1063/1.3247881

Enhancing the retention properties of ZnO memory transistor by modifying the channel/ferroelectric polymer interface

C. H. Park, Gyubaek Lee, Kwang H. Lee, Seongil Im, Byoung H. Lee, Myung M. Sung

Department of Physics

Research output: Contribution to journal › Article

32 Citations (Scopus)

Abstract

We report on the fabrication of ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] ferroelectric layer. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of ±20 V with a maximum field effect mobility of ∼1 cm2 /V s, maximum memory window of ∼20 V, and WR-ER current ratio of 4× 102. When the NVM-TFT has a modified channel/ferroelectric interface with an inserted thin Al2 O³ buffer layer, our device shows long retention time of more than 104 s, which is much enhanced compared to that of the other device without the buffer. The dynamic response of our devices with or without the buffer was clear enough to distinguish the WR and ER states as performed with 300 ms pulse.

Original language	English
Article number	153502
Journal	Applied Physics Letters
Volume	95
Issue number	15
DOIs	https://doi.org/10.1063/1.3247881
Publication status	Published - 2009 Oct 22

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All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Park, C. H., Lee, G., Lee, K. H., Im, S., Lee, B. H., & Sung, M. M. (2009). Enhancing the retention properties of ZnO memory transistor by modifying the channel/ferroelectric polymer interface. Applied Physics Letters, 95(15), [153502]. https://doi.org/10.1063/1.3247881

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10.1063/1.3247881