Enhancing the retention properties of ZnO memory transistor by modifying the channel/ferroelectric polymer interface

C. H. Park; Gyubaek Lee; Kwang H. Lee; Seongil Im; Byoung H. Lee; Myung M. Sung

doi:10.1063/1.3247881

Enhancing the retention properties of ZnO memory transistor by modifying the channel/ferroelectric polymer interface

C. H. Park, Gyubaek Lee, Kwang H. Lee, Seongil Im, Byoung H. Lee, Myung M. Sung

Department of Physics

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

We report on the fabrication of ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] ferroelectric layer. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of ±20 V with a maximum field effect mobility of ∼1 cm2 /V s, maximum memory window of ∼20 V, and WR-ER current ratio of 4× 102. When the NVM-TFT has a modified channel/ferroelectric interface with an inserted thin Al2 O³ buffer layer, our device shows long retention time of more than 104 s, which is much enhanced compared to that of the other device without the buffer. The dynamic response of our devices with or without the buffer was clear enough to distinguish the WR and ER states as performed with 300 ms pulse.

Original language	English
Article number	153502
Journal	Applied Physics Letters
Volume	95
Issue number	15
DOIs	https://doi.org/10.1063/1.3247881
Publication status	Published - 2009

Bibliographical note

Funding Information:
Authors acknowledge the financial support from KOSEF (NRL program Grant No. 2009-8-0403), from MKE (the fundamental R&D Program for Core Technology of Materials, Grant No. 2008-8-1410, the IT R&D Program for Smart window with transparent electronic devices, Grant No. 2008-8-0613), and Brain Korea 21 Program. C.H.P. thanks the Seoul Science Fellowship.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Enhancing the retention properties of ZnO memory transistor by modifying the channel/ferroelectric polymer interface",

abstract = "We report on the fabrication of ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] ferroelectric layer. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of ±20 V with a maximum field effect mobility of ∼1 cm2 /V s, maximum memory window of ∼20 V, and WR-ER current ratio of 4× 102. When the NVM-TFT has a modified channel/ferroelectric interface with an inserted thin Al2 O3 buffer layer, our device shows long retention time of more than 104 s, which is much enhanced compared to that of the other device without the buffer. The dynamic response of our devices with or without the buffer was clear enough to distinguish the WR and ER states as performed with 300 ms pulse.",

author = "Park, {C. H.} and Gyubaek Lee and Lee, {Kwang H.} and Seongil Im and Lee, {Byoung H.} and Sung, {Myung M.}",

note = "Funding Information: Authors acknowledge the financial support from KOSEF (NRL program Grant No. 2009-8-0403), from MKE (the fundamental R&D Program for Core Technology of Materials, Grant No. 2008-8-1410, the IT R&D Program for Smart window with transparent electronic devices, Grant No. 2008-8-0613), and Brain Korea 21 Program. C.H.P. thanks the Seoul Science Fellowship. ",

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AU - Lee, Gyubaek

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AU - Im, Seongil

AU - Lee, Byoung H.

AU - Sung, Myung M.

N1 - Funding Information: Authors acknowledge the financial support from KOSEF (NRL program Grant No. 2009-8-0403), from MKE (the fundamental R&D Program for Core Technology of Materials, Grant No. 2008-8-1410, the IT R&D Program for Smart window with transparent electronic devices, Grant No. 2008-8-0613), and Brain Korea 21 Program. C.H.P. thanks the Seoul Science Fellowship.

PY - 2009

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N2 - We report on the fabrication of ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] ferroelectric layer. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of ±20 V with a maximum field effect mobility of ∼1 cm2 /V s, maximum memory window of ∼20 V, and WR-ER current ratio of 4× 102. When the NVM-TFT has a modified channel/ferroelectric interface with an inserted thin Al2 O3 buffer layer, our device shows long retention time of more than 104 s, which is much enhanced compared to that of the other device without the buffer. The dynamic response of our devices with or without the buffer was clear enough to distinguish the WR and ER states as performed with 300 ms pulse.

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