Abstract
We report on the fabrication of ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] ferroelectric layer. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of ±20 V with a maximum field effect mobility of ∼1 cm2 /V s, maximum memory window of ∼20 V, and WR-ER current ratio of 4× 102. When the NVM-TFT has a modified channel/ferroelectric interface with an inserted thin Al2 O3 buffer layer, our device shows long retention time of more than 104 s, which is much enhanced compared to that of the other device without the buffer. The dynamic response of our devices with or without the buffer was clear enough to distinguish the WR and ER states as performed with 300 ms pulse.
| Original language | English |
|---|---|
| Article number | 153502 |
| Journal | Applied Physics Letters |
| Volume | 95 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 2009 Oct 22 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Enhancing the retention properties of ZnO memory transistor by modifying the channel/ferroelectric polymer interface. / Park, C. H.; Lee, Gyubaek; Lee, Kwang H.; Im, Seongil; Lee, Byoung H.; Sung, Myung M.
In: Applied Physics Letters, Vol. 95, No. 15, 153502, 22.10.2009.Research output: Contribution to journal › Article
TY - JOUR
T1 - Enhancing the retention properties of ZnO memory transistor by modifying the channel/ferroelectric polymer interface
AU - Park, C. H.
AU - Lee, Gyubaek
AU - Lee, Kwang H.
AU - Im, Seongil
AU - Lee, Byoung H.
AU - Sung, Myung M.
PY - 2009/10/22
Y1 - 2009/10/22
N2 - We report on the fabrication of ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] ferroelectric layer. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of ±20 V with a maximum field effect mobility of ∼1 cm2 /V s, maximum memory window of ∼20 V, and WR-ER current ratio of 4× 102. When the NVM-TFT has a modified channel/ferroelectric interface with an inserted thin Al2 O3 buffer layer, our device shows long retention time of more than 104 s, which is much enhanced compared to that of the other device without the buffer. The dynamic response of our devices with or without the buffer was clear enough to distinguish the WR and ER states as performed with 300 ms pulse.
AB - We report on the fabrication of ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] ferroelectric layer. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of ±20 V with a maximum field effect mobility of ∼1 cm2 /V s, maximum memory window of ∼20 V, and WR-ER current ratio of 4× 102. When the NVM-TFT has a modified channel/ferroelectric interface with an inserted thin Al2 O3 buffer layer, our device shows long retention time of more than 104 s, which is much enhanced compared to that of the other device without the buffer. The dynamic response of our devices with or without the buffer was clear enough to distinguish the WR and ER states as performed with 300 ms pulse.
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U2 - 10.1063/1.3247881
DO - 10.1063/1.3247881
M3 - Article
AN - SCOPUS:70350070411
VL - 95
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 15
M1 - 153502
ER -