We report on the fabrication of ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with thin poly(vinylidene fluoride/trifluoroethylene) [P(VDF-TrFE)] ferroelectric layer. Our NVM-TFT operates on glass substrates under low voltage write-erase (WR-ER) pulse of ±20 V with a maximum field effect mobility of ∼1 cm2 /V s, maximum memory window of ∼20 V, and WR-ER current ratio of 4× 102. When the NVM-TFT has a modified channel/ferroelectric interface with an inserted thin Al2 O3 buffer layer, our device shows long retention time of more than 104 s, which is much enhanced compared to that of the other device without the buffer. The dynamic response of our devices with or without the buffer was clear enough to distinguish the WR and ER states as performed with 300 ms pulse.
Bibliographical noteFunding Information:
Authors acknowledge the financial support from KOSEF (NRL program Grant No. 2009-8-0403), from MKE (the fundamental R&D Program for Core Technology of Materials, Grant No. 2008-8-1410, the IT R&D Program for Smart window with transparent electronic devices, Grant No. 2008-8-0613), and Brain Korea 21 Program. C.H.P. thanks the Seoul Science Fellowship.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)