Environmental-Variation-Tolerant magnetic tunnel junction-based physical unclonable function cell with auto write-back technique

Byungkyu Song, Sehee Lim, Seung H. Kang, Seong Ook Jung

Research output: Contribution to journalArticlepeer-review

Abstract

Recently, with the increase in popularity of Internet of Things (IoT) devices, cryptographic protection techniques have become necessary for high-security applications. In general, IoT devices have strict power and area constraints. Thus, use of a physical unclonable function (PUF), which can generate a secret key at low cost, can be advantageous for high-security IoT devices. This paper presents a novel environmental-variation-tolerant (EVT) magnetic tunnel junction (MTJ)-based PUF that has a small area, high randomness, and low bit error rate (BER) compared to previous PUFs. The simulation results obtained using industry-compatible 65-nm model parameters indicate that the proposed PUF exhibits an inter-chip Hamming distance of 0.4901 and entropy of 0.9997, which proves the randomness of the PUF response. In addition, the proposed PUF exhibits the lowest BER across a wide voltage range (0.9 V-1.3 V) and temperature range (-25 °C - 75 °C) compared with previous PUFs.

Original languageEnglish
Article number9385126
Pages (from-to)2843-2853
Number of pages11
JournalIEEE Transactions on Information Forensics and Security
Volume16
DOIs
Publication statusPublished - 2021

Bibliographical note

Publisher Copyright:
© 2005-2012 IEEE.

All Science Journal Classification (ASJC) codes

  • Safety, Risk, Reliability and Quality
  • Computer Networks and Communications

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