Epitaxial CrN(001) Grown and Analyzed in situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers

R. T. Haasch; T. Y. Lee; D. Gall; J. E. Greene; I. Petrov

doi:10.1116/1.1367636

Epitaxial CrN(001) Grown and Analyzed in situ by XPS and UPS. II. Analysis of Ar⁺ Sputter Etched Layers

R. T. Haasch, T. Y. Lee, D. Gall, J. E. Greene, I. Petrov

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to study epitaxial CrN(001) grown in situ which were Ar⁺ sputter etched. The films were deposited on MgO(001) at 650 °C in pure N₂ discharges maintained at a pressure of 5 mTorr (0.67) and shown to have a N/Cr ratio of 1.04 ± 0.02 by Rutherford backscattering (RBS). The films were sputter etched with 3 keV Ar⁺ at an angle of 40° to a constant nitrogen-to-chromium ratio. A Mg Kα x-ray source was used to obtain the XPS data, while the UPS data was generated by He I and He II UV radiation. The sputter etched films were found to have a N/Cr ratio, as determined by XPS, of 0.63, a decrease of 29% of that determined from the as-deposited surface. This indicates a preferential removal of nitrogen from the sputtered layers.

Original language	English
Pages (from-to)	262-270
Number of pages	9
Journal	Surface Science Spectra
Volume	7
Issue number	3
DOIs	https://doi.org/10.1116/1.1367636
Publication status	Published - 2000 Jul 1

Bibliographical note

Funding Information:
The authors gratefully acknowledge the financial support of the Department of Energy, under Contract No. DEFG02-96-ER45439 and the use of the facilities of the Center for Microanalysis of Materials, which is partially supported by DOE, at the University of Illinois.

Publisher Copyright:
© 2000 American Vacuum Society.

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1116/1.1367636

Cite this

@article{66a25133c52042df8aafb4080587af38,

title = "Epitaxial CrN(001) Grown and Analyzed in situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers",

abstract = "X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to study epitaxial CrN(001) grown in situ which were Ar+ sputter etched. The films were deposited on MgO(001) at 650 °C in pure N2 discharges maintained at a pressure of 5 mTorr (0.67) and shown to have a N/Cr ratio of 1.04 ± 0.02 by Rutherford backscattering (RBS). The films were sputter etched with 3 keV Ar+ at an angle of 40° to a constant nitrogen-to-chromium ratio. A Mg Kα x-ray source was used to obtain the XPS data, while the UPS data was generated by He I and He II UV radiation. The sputter etched films were found to have a N/Cr ratio, as determined by XPS, of 0.63, a decrease of 29% of that determined from the as-deposited surface. This indicates a preferential removal of nitrogen from the sputtered layers.",

author = "Haasch, {R. T.} and Lee, {T. Y.} and D. Gall and Greene, {J. E.} and I. Petrov",

note = "Funding Information: The authors gratefully acknowledge the financial support of the Department of Energy, under Contract No. DEFG02-96-ER45439 and the use of the facilities of the Center for Microanalysis of Materials, which is partially supported by DOE, at the University of Illinois. Publisher Copyright: {\textcopyright} 2000 American Vacuum Society.",

year = "2000",

month = jul,

day = "1",

doi = "10.1116/1.1367636",

language = "English",

volume = "7",

pages = "262--270",

journal = "Surface Science Spectra",

issn = "1055-5269",

publisher = "AVS Science and Technology Society",

number = "3",

}

TY - JOUR

T1 - Epitaxial CrN(001) Grown and Analyzed in situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers

AU - Haasch, R. T.

AU - Lee, T. Y.

AU - Gall, D.

AU - Greene, J. E.

AU - Petrov, I.

N1 - Funding Information: The authors gratefully acknowledge the financial support of the Department of Energy, under Contract No. DEFG02-96-ER45439 and the use of the facilities of the Center for Microanalysis of Materials, which is partially supported by DOE, at the University of Illinois. Publisher Copyright: © 2000 American Vacuum Society.

PY - 2000/7/1

Y1 - 2000/7/1

N2 - X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to study epitaxial CrN(001) grown in situ which were Ar+ sputter etched. The films were deposited on MgO(001) at 650 °C in pure N2 discharges maintained at a pressure of 5 mTorr (0.67) and shown to have a N/Cr ratio of 1.04 ± 0.02 by Rutherford backscattering (RBS). The films were sputter etched with 3 keV Ar+ at an angle of 40° to a constant nitrogen-to-chromium ratio. A Mg Kα x-ray source was used to obtain the XPS data, while the UPS data was generated by He I and He II UV radiation. The sputter etched films were found to have a N/Cr ratio, as determined by XPS, of 0.63, a decrease of 29% of that determined from the as-deposited surface. This indicates a preferential removal of nitrogen from the sputtered layers.

AB - X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to study epitaxial CrN(001) grown in situ which were Ar+ sputter etched. The films were deposited on MgO(001) at 650 °C in pure N2 discharges maintained at a pressure of 5 mTorr (0.67) and shown to have a N/Cr ratio of 1.04 ± 0.02 by Rutherford backscattering (RBS). The films were sputter etched with 3 keV Ar+ at an angle of 40° to a constant nitrogen-to-chromium ratio. A Mg Kα x-ray source was used to obtain the XPS data, while the UPS data was generated by He I and He II UV radiation. The sputter etched films were found to have a N/Cr ratio, as determined by XPS, of 0.63, a decrease of 29% of that determined from the as-deposited surface. This indicates a preferential removal of nitrogen from the sputtered layers.

UR - http://www.scopus.com/inward/record.url?scp=85116929212&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85116929212&partnerID=8YFLogxK

U2 - 10.1116/1.1367636

DO - 10.1116/1.1367636

M3 - Article

AN - SCOPUS:85116929212

SN - 1055-5269

VL - 7

SP - 262

EP - 270

JO - Surface Science Spectra

JF - Surface Science Spectra

IS - 3

ER -