Abstract
Herein we demonstrate the epitaxial stabilization of single-crystalline (GdxLa1-x)2O3 films on n-GaAs (0 0 1) with a controlled lattice match. (GdxLa1-x)2O3 films have an in-plane epitaxial relationship with a twofold rotation on GaAs (0 0 1). Spectroscopic characterization by photoemission and absorption confirms that the band gap of (GdxLa1-x)2O3 film is approximately ∼5.8 eV. However, the conduction band offset is increased by the unpinned Fermi level of the n-GaAs in the (GdxLa1-x)2O3 film (x = 0.97). The correlation of the crystalline property and the interfacial band offset by the electrical properties, as probed by capacitance and leakage current measurements, is also discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 114-117 |
| Number of pages | 4 |
| Journal | Micron |
| Volume | 40 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2009 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Structural Biology
- Cell Biology
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Epitaxial growth and band alignment of (GdxLa1-x)2O3 films on n-GaAs (0 0 1). / Yang, Jun Kyu; Choi, Sun Gyu; Park, Hyung-Ho.
In: Micron, Vol. 40, No. 1, 01.01.2009, p. 114-117.Research output: Contribution to journal › Article
TY - JOUR
T1 - Epitaxial growth and band alignment of (GdxLa1-x)2O3 films on n-GaAs (0 0 1)
AU - Yang, Jun Kyu
AU - Choi, Sun Gyu
AU - Park, Hyung-Ho
PY - 2009/1/1
Y1 - 2009/1/1
N2 - Herein we demonstrate the epitaxial stabilization of single-crystalline (GdxLa1-x)2O3 films on n-GaAs (0 0 1) with a controlled lattice match. (GdxLa1-x)2O3 films have an in-plane epitaxial relationship with a twofold rotation on GaAs (0 0 1). Spectroscopic characterization by photoemission and absorption confirms that the band gap of (GdxLa1-x)2O3 film is approximately ∼5.8 eV. However, the conduction band offset is increased by the unpinned Fermi level of the n-GaAs in the (GdxLa1-x)2O3 film (x = 0.97). The correlation of the crystalline property and the interfacial band offset by the electrical properties, as probed by capacitance and leakage current measurements, is also discussed.
AB - Herein we demonstrate the epitaxial stabilization of single-crystalline (GdxLa1-x)2O3 films on n-GaAs (0 0 1) with a controlled lattice match. (GdxLa1-x)2O3 films have an in-plane epitaxial relationship with a twofold rotation on GaAs (0 0 1). Spectroscopic characterization by photoemission and absorption confirms that the band gap of (GdxLa1-x)2O3 film is approximately ∼5.8 eV. However, the conduction band offset is increased by the unpinned Fermi level of the n-GaAs in the (GdxLa1-x)2O3 film (x = 0.97). The correlation of the crystalline property and the interfacial band offset by the electrical properties, as probed by capacitance and leakage current measurements, is also discussed.
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U2 - 10.1016/j.micron.2008.03.002
DO - 10.1016/j.micron.2008.03.002
M3 - Article
C2 - 18442915
AN - SCOPUS:54349091371
VL - 40
SP - 114
EP - 117
JO - Micron
JF - Micron
SN - 0968-4328
IS - 1
ER -