Epitaxial growth and band alignment of (GdxLa1-x)2O3 films on n-GaAs (0 0 1)

Jun Kyu Yang, Sun Gyu Choi, Hyung-Ho Park

Research output: Contribution to journalArticle

Abstract

Herein we demonstrate the epitaxial stabilization of single-crystalline (GdxLa1-x)2O3 films on n-GaAs (0 0 1) with a controlled lattice match. (GdxLa1-x)2O3 films have an in-plane epitaxial relationship with a twofold rotation on GaAs (0 0 1). Spectroscopic characterization by photoemission and absorption confirms that the band gap of (GdxLa1-x)2O3 film is approximately ∼5.8 eV. However, the conduction band offset is increased by the unpinned Fermi level of the n-GaAs in the (GdxLa1-x)2O3 film (x = 0.97). The correlation of the crystalline property and the interfacial band offset by the electrical properties, as probed by capacitance and leakage current measurements, is also discussed.

Original languageEnglish
Pages (from-to)114-117
Number of pages4
JournalMicron
Volume40
Issue number1
DOIs
Publication statusPublished - 2009 Jan 1

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gallium arsenide

All Science Journal Classification (ASJC) codes

  • Structural Biology
  • Cell Biology

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Yang, Jun Kyu ; Choi, Sun Gyu ; Park, Hyung-Ho. / Epitaxial growth and band alignment of (GdxLa1-x)2O3 films on n-GaAs (0 0 1). In: Micron. 2009 ; Vol. 40, No. 1. pp. 114-117.
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Epitaxial growth and band alignment of (GdxLa1-x)2O3 films on n-GaAs (0 0 1). / Yang, Jun Kyu; Choi, Sun Gyu; Park, Hyung-Ho.

In: Micron, Vol. 40, No. 1, 01.01.2009, p. 114-117.

Research output: Contribution to journalArticle

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AB - Herein we demonstrate the epitaxial stabilization of single-crystalline (GdxLa1-x)2O3 films on n-GaAs (0 0 1) with a controlled lattice match. (GdxLa1-x)2O3 films have an in-plane epitaxial relationship with a twofold rotation on GaAs (0 0 1). Spectroscopic characterization by photoemission and absorption confirms that the band gap of (GdxLa1-x)2O3 film is approximately ∼5.8 eV. However, the conduction band offset is increased by the unpinned Fermi level of the n-GaAs in the (GdxLa1-x)2O3 film (x = 0.97). The correlation of the crystalline property and the interfacial band offset by the electrical properties, as probed by capacitance and leakage current measurements, is also discussed.

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