Epitaxial growth and band alignment of (GdxLa1-x)2O3 films on n-GaAs (0 0 1)

Jun Kyu Yang; Sun Gyu Choi; Hyung Ho Park

doi:10.1016/j.micron.2008.03.002

Epitaxial growth and band alignment of (Gd_xLa_1-x)₂O₃ films on n-GaAs (0 0 1)

Jun Kyu Yang, Sun Gyu Choi, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Herein we demonstrate the epitaxial stabilization of single-crystalline (Gd_xLa_1-x)₂O₃ films on n-GaAs (0 0 1) with a controlled lattice match. (Gd_xLa_1-x)₂O₃ films have an in-plane epitaxial relationship with a twofold rotation on GaAs (0 0 1). Spectroscopic characterization by photoemission and absorption confirms that the band gap of (Gd_xLa_1-x)₂O₃ film is approximately ∼5.8 eV. However, the conduction band offset is increased by the unpinned Fermi level of the n-GaAs in the (Gd_xLa_1-x)₂O₃ film (x = 0.97). The correlation of the crystalline property and the interfacial band offset by the electrical properties, as probed by capacitance and leakage current measurements, is also discussed.

Original language	English
Pages (from-to)	114-117
Number of pages	4
Journal	Micron
Volume	40
Issue number	1
DOIs	https://doi.org/10.1016/j.micron.2008.03.002
Publication status	Published - 2009 Jan

Bibliographical note

Funding Information:
“This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD)” (KRF-2007-314-D00133). The experiments at PLS were supported in part by MOST and POSTECH. This work was researched by the Second Stage of Brain Korea 21 Project in 2007.

All Science Journal Classification (ASJC) codes

Structural Biology
Materials Science(all)
Physics and Astronomy(all)
Cell Biology

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title = "Epitaxial growth and band alignment of (GdxLa1-x)2O3 films on n-GaAs (0 0 1)",

abstract = "Herein we demonstrate the epitaxial stabilization of single-crystalline (GdxLa1-x)2O3 films on n-GaAs (0 0 1) with a controlled lattice match. (GdxLa1-x)2O3 films have an in-plane epitaxial relationship with a twofold rotation on GaAs (0 0 1). Spectroscopic characterization by photoemission and absorption confirms that the band gap of (GdxLa1-x)2O3 film is approximately ∼5.8 eV. However, the conduction band offset is increased by the unpinned Fermi level of the n-GaAs in the (GdxLa1-x)2O3 film (x = 0.97). The correlation of the crystalline property and the interfacial band offset by the electrical properties, as probed by capacitance and leakage current measurements, is also discussed.",

author = "Yang, {Jun Kyu} and Choi, {Sun Gyu} and Park, {Hyung Ho}",

note = "Funding Information: “This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD)” (KRF-2007-314-D00133). The experiments at PLS were supported in part by MOST and POSTECH. This work was researched by the Second Stage of Brain Korea 21 Project in 2007. ",

year = "2009",

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doi = "10.1016/j.micron.2008.03.002",

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T1 - Epitaxial growth and band alignment of (GdxLa1-x)2O3 films on n-GaAs (0 0 1)

AU - Yang, Jun Kyu

AU - Choi, Sun Gyu

AU - Park, Hyung Ho

N1 - Funding Information: “This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD)” (KRF-2007-314-D00133). The experiments at PLS were supported in part by MOST and POSTECH. This work was researched by the Second Stage of Brain Korea 21 Project in 2007.

PY - 2009/1

Y1 - 2009/1

N2 - Herein we demonstrate the epitaxial stabilization of single-crystalline (GdxLa1-x)2O3 films on n-GaAs (0 0 1) with a controlled lattice match. (GdxLa1-x)2O3 films have an in-plane epitaxial relationship with a twofold rotation on GaAs (0 0 1). Spectroscopic characterization by photoemission and absorption confirms that the band gap of (GdxLa1-x)2O3 film is approximately ∼5.8 eV. However, the conduction band offset is increased by the unpinned Fermi level of the n-GaAs in the (GdxLa1-x)2O3 film (x = 0.97). The correlation of the crystalline property and the interfacial band offset by the electrical properties, as probed by capacitance and leakage current measurements, is also discussed.

AB - Herein we demonstrate the epitaxial stabilization of single-crystalline (GdxLa1-x)2O3 films on n-GaAs (0 0 1) with a controlled lattice match. (GdxLa1-x)2O3 films have an in-plane epitaxial relationship with a twofold rotation on GaAs (0 0 1). Spectroscopic characterization by photoemission and absorption confirms that the band gap of (GdxLa1-x)2O3 film is approximately ∼5.8 eV. However, the conduction band offset is increased by the unpinned Fermi level of the n-GaAs in the (GdxLa1-x)2O3 film (x = 0.97). The correlation of the crystalline property and the interfacial band offset by the electrical properties, as probed by capacitance and leakage current measurements, is also discussed.

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