Herein we demonstrate the epitaxial stabilization of single-crystalline (GdxLa1-x)2O3 films on n-GaAs (0 0 1) with a controlled lattice match. (GdxLa1-x)2O3 films have an in-plane epitaxial relationship with a twofold rotation on GaAs (0 0 1). Spectroscopic characterization by photoemission and absorption confirms that the band gap of (GdxLa1-x)2O3 film is approximately ∼5.8 eV. However, the conduction band offset is increased by the unpinned Fermi level of the n-GaAs in the (GdxLa1-x)2O3 film (x = 0.97). The correlation of the crystalline property and the interfacial band offset by the electrical properties, as probed by capacitance and leakage current measurements, is also discussed.
Bibliographical noteFunding Information:
“This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD)” (KRF-2007-314-D00133). The experiments at PLS were supported in part by MOST and POSTECH. This work was researched by the Second Stage of Brain Korea 21 Project in 2007.
All Science Journal Classification (ASJC) codes
- Structural Biology
- Materials Science(all)
- Physics and Astronomy(all)
- Cell Biology