Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices

Hyun Kum; Doeon Lee; Wei Kong; Hyunseok Kim; Yongmo Park; Yunjo Kim; Yongmin Baek; Sang Hoon Bae; Kyusang Lee; Jeehwan Kim

doi:10.1038/s41928-019-0314-2

Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices

Hyun Kum, Doeon Lee, Wei Kong, Hyunseok Kim, Yongmo Park, Yunjo Kim, Yongmin Baek, Sang Hoon Bae, Kyusang Lee, Jeehwan Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Review article › peer-review

98 Citations (Scopus)

Abstract

The demand for improved electronic and optoelectronic devices has fuelled the development of epitaxial growth techniques for single-crystalline semiconductors. However, lattice and thermal expansion coefficient mismatch problems limit the options for growth and integration of high-efficiency electronic and photonic devices on dissimilar materials. Accordingly, advanced epitaxial growth and layer lift-off techniques have been developed to address issues relating to lattice mismatch. Here, we review epitaxial growth and layer-transfer techniques for monolithic integration of dissimilar single-crystalline materials for application in advanced electronic and photonic devices. We also examine emerging epitaxial growth techniques that involve two-dimensional materials as an epitaxial release layer and explore future integrated computing systems that could harness both advanced epitaxial growth and lift-off approaches.

Original language	English
Pages (from-to)	439-450
Number of pages	12
Journal	Nature Electronics
Volume	2
Issue number	10
DOIs	https://doi.org/10.1038/s41928-019-0314-2
Publication status	Published - 2019 Oct 1

Bibliographical note

Funding Information:
We acknowledge funding from the Department of Energy, Office of Energy Efficiency and Renewable Energy, and Defense Advanced Research Projects Agency (award numbers 027049-00001 and D19AP00037).

Publisher Copyright:
© 2019, The Author(s), under exclusive licence to Springer Nature Limited.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Electrical and Electronic Engineering

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10.1038/s41928-019-0314-2

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abstract = "The demand for improved electronic and optoelectronic devices has fuelled the development of epitaxial growth techniques for single-crystalline semiconductors. However, lattice and thermal expansion coefficient mismatch problems limit the options for growth and integration of high-efficiency electronic and photonic devices on dissimilar materials. Accordingly, advanced epitaxial growth and layer lift-off techniques have been developed to address issues relating to lattice mismatch. Here, we review epitaxial growth and layer-transfer techniques for monolithic integration of dissimilar single-crystalline materials for application in advanced electronic and photonic devices. We also examine emerging epitaxial growth techniques that involve two-dimensional materials as an epitaxial release layer and explore future integrated computing systems that could harness both advanced epitaxial growth and lift-off approaches.",

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AU - Kim, Yunjo

AU - Baek, Yongmin

AU - Bae, Sang Hoon

AU - Lee, Kyusang

AU - Kim, Jeehwan

N1 - Funding Information: We acknowledge funding from the Department of Energy, Office of Energy Efficiency and Renewable Energy, and Defense Advanced Research Projects Agency (award numbers 027049-00001 and D19AP00037). Publisher Copyright: © 2019, The Author(s), under exclusive licence to Springer Nature Limited.

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N2 - The demand for improved electronic and optoelectronic devices has fuelled the development of epitaxial growth techniques for single-crystalline semiconductors. However, lattice and thermal expansion coefficient mismatch problems limit the options for growth and integration of high-efficiency electronic and photonic devices on dissimilar materials. Accordingly, advanced epitaxial growth and layer lift-off techniques have been developed to address issues relating to lattice mismatch. Here, we review epitaxial growth and layer-transfer techniques for monolithic integration of dissimilar single-crystalline materials for application in advanced electronic and photonic devices. We also examine emerging epitaxial growth techniques that involve two-dimensional materials as an epitaxial release layer and explore future integrated computing systems that could harness both advanced epitaxial growth and lift-off approaches.

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Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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