Epitaxial growth and layer-transfer techniques for heterogeneous integration of materials for electronic and photonic devices

Hyun Kum, Doeon Lee, Wei Kong, Hyunseok Kim, Yongmo Park, Yunjo Kim, Yongmin Baek, Sang Hoon Bae, Kyusang Lee, Jeehwan Kim

Research output: Contribution to journalReview articlepeer-review

37 Citations (Scopus)

Abstract

The demand for improved electronic and optoelectronic devices has fuelled the development of epitaxial growth techniques for single-crystalline semiconductors. However, lattice and thermal expansion coefficient mismatch problems limit the options for growth and integration of high-efficiency electronic and photonic devices on dissimilar materials. Accordingly, advanced epitaxial growth and layer lift-off techniques have been developed to address issues relating to lattice mismatch. Here, we review epitaxial growth and layer-transfer techniques for monolithic integration of dissimilar single-crystalline materials for application in advanced electronic and photonic devices. We also examine emerging epitaxial growth techniques that involve two-dimensional materials as an epitaxial release layer and explore future integrated computing systems that could harness both advanced epitaxial growth and lift-off approaches.

Original languageEnglish
Pages (from-to)439-450
Number of pages12
JournalNature Electronics
Volume2
Issue number10
DOIs
Publication statusPublished - 2019 Oct 1

Bibliographical note

Funding Information:
We acknowledge funding from the Department of Energy, Office of Energy Efficiency and Renewable Energy, and Defense Advanced Research Projects Agency (award numbers 027049-00001 and D19AP00037).

Publisher Copyright:
© 2019, The Author(s), under exclusive licence to Springer Nature Limited.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Electrical and Electronic Engineering

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