Epitaxial growth of a silicon capping layer to mitigate roughness after the selective chemical etching of Si_1-xGe_x

Engineering

• Density 100%
• Acid 75%
• Roughness 75%
• Electric Potential 50%
• Interface Trap 50%
• Si Capping Layer 50%
• Metal-Oxide-Semiconductor Field-Effect Transistor 50%
• Surfaces 50%
• Atomic Layer Deposition 25%
• Deposition Process 25%
• Promising Candidate 25%
• Future Generation 25%
• Device Performance 25%
• Nanowire 25%
• Si Substrate 25%
• Capacitance 25%
• Metal Gate 25%
• Sio2 Film 25%
• Interface State 25%
• Low Power Operation 25%
• Si Surface 25%
• Dangling Bond 25%
• Capping Layer 25%
• Selective Etching 25%
• Atomic Bond 25%
• Thickness 25%
• Measurer 25%
• Current Drive 25%

Physics

• Silicon 75%
• Roughness 75%
• Electric Potential 50%
• Area 50%
• Etching 50%
• X Ray Spectroscopy 25%
• Atomic Layer Epitaxy 25%
• Surface Roughness 25%
• Capacitance 25%
• Atomic Force Microscopy 25%
• Germanium 25%
• Technology 25%
• Nanowires 25%
• Impact 25%
• Atoms 25%

Material Science

• Surface 50%
• Etching 50%
• Multilayers 50%
• Epitaxy 25%
• Wet Etching 25%
• Rough Surface 25%