Epitaxial growth of a silicon capping layer to mitigate roughness after the selective chemical etching of Si_1-xGe_x

Engineering & Materials Science

• Epitaxial growth 100%
• Etching 76%
• Surface roughness 59%
• Silicon 56%
• Dangling bonds 32%
• Interface states 27%
• Atomic layer deposition 27%
• Hydrofluoric acid 27%
• Epitaxial films 27%
• Wet etching 24%
• Nitric acid 24%
• Germanium 23%
• Acetic acid 23%
• Atomic force microscopy 22%
• Nanowires 22%
• X ray photoelectron spectroscopy 21%
• MOSFET devices 20%
• Atoms 18%
• Electric potential 18%
• Multilayers 17%
• Capacitance 15%
• Substrates 12%
• Metals 11%

Chemical Compounds

• Epitaxial Growth 86%
• Etching 64%
• Interface Trap 59%
• Trap Density Measurement 54%
• Density of Interface States 33%
• Dangling Bond 23%
• Surface 22%
• Atomic Layer Epitaxy 20%
• Deposition Process 19%
• Surface Roughness 17%
• Field Effect 17%
• Multilayer 15%
• Nanowire 15%
• Metal Oxide 14%
• Atomic Force Microscopy 14%
• Semiconductor 13%
• Acetic Acid 13%
• Voltage 12%
• X-Ray Photoelectron Spectroscopy 12%
• Liquid Film 8%
• Metal 8%
• Acid 6%

Physics & Astronomy

• roughness 58%
• etching 53%
• silicon 38%
• traps 26%
• nitric acid 23%
• acetic acid 23%
• etchants 22%
• hydrofluoric acid 22%
• electric potential 19%
• atomic layer epitaxy 18%
• metal oxide semiconductors 18%
• thick films 16%
• germanium 15%
• surface roughness 15%
• photoelectron spectroscopy 14%
• nanowires 14%
• capacitance 14%
• field effect transistors 13%
• atomic force microscopy 13%
• curves 9%
• metals 9%
• atoms 8%
• x rays 8%
• performance 7%