Epitaxial growth of CoSi2 in a decanano contact opening on a (100) silicon substrate

Ho Jung Sun, Young Jin Lee, Soo Hyun Kim, Joo Wan Lee, Ja Chun Ku, Hyun Chul Sohn, Jin Woong Kim, Uisik Kim, Nak Kyun Sung

Research output: Contribution to journalArticle

Abstract

The behavior of cobalt silicidation was investigated in a 45-nm-wide contact opening on (100) silicon substrate. A Co film was deposited using sputtering techniques with elongated target-to-wafer spacing and a CoSi2 phase was developed after being annealed using rapid thermal processing at 750°C for 30 s. It was revealed that the CoSi2 was grown epitaxially both on {111} and (100) Si at the same time, resulting in a faceted single crystal. Type A epitaxy on {111} Si was developed due to the coepitaxial growth. It was suggested that the tendency for the epitaxial growth of CoSi2 was strong in such a highly confined contact opening.

Original languageEnglish
Article number221919
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number22
DOIs
Publication statusPublished - 2005 Jul 4

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Sun, H. J., Lee, Y. J., Kim, S. H., Lee, J. W., Ku, J. C., Sohn, H. C., Kim, J. W., Kim, U., & Sung, N. K. (2005). Epitaxial growth of CoSi2 in a decanano contact opening on a (100) silicon substrate. Applied Physics Letters, 86(22), 1-3. [221919]. https://doi.org/10.1063/1.1943500