Epitaxial growth of CoSi2 in a decanano contact opening on a (100) silicon substrate

Ho Jung Sun, Young Jin Lee, Soo Hyun Kim, Joo Wan Lee, Ja Chun Ku, Hyun Chul Sohn, Jin Woong Kim, Uisik Kim, Nak Kyun Sung

Research output: Contribution to journalArticle

Abstract

The behavior of cobalt silicidation was investigated in a 45-nm-wide contact opening on (100) silicon substrate. A Co film was deposited using sputtering techniques with elongated target-to-wafer spacing and a CoSi2 phase was developed after being annealed using rapid thermal processing at 750°C for 30 s. It was revealed that the CoSi2 was grown epitaxially both on {111} and (100) Si at the same time, resulting in a faceted single crystal. Type A epitaxy on {111} Si was developed due to the coepitaxial growth. It was suggested that the tendency for the epitaxial growth of CoSi2 was strong in such a highly confined contact opening.

Original languageEnglish
Article number221919
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number22
DOIs
Publication statusPublished - 2005 Jul 4

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silicon
epitaxy
tendencies
cobalt
sputtering
spacing
wafers
single crystals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Sun, H. J., Lee, Y. J., Kim, S. H., Lee, J. W., Ku, J. C., Sohn, H. C., ... Sung, N. K. (2005). Epitaxial growth of CoSi2 in a decanano contact opening on a (100) silicon substrate. Applied Physics Letters, 86(22), 1-3. [221919]. https://doi.org/10.1063/1.1943500
Sun, Ho Jung ; Lee, Young Jin ; Kim, Soo Hyun ; Lee, Joo Wan ; Ku, Ja Chun ; Sohn, Hyun Chul ; Kim, Jin Woong ; Kim, Uisik ; Sung, Nak Kyun. / Epitaxial growth of CoSi2 in a decanano contact opening on a (100) silicon substrate. In: Applied Physics Letters. 2005 ; Vol. 86, No. 22. pp. 1-3.
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Sun, HJ, Lee, YJ, Kim, SH, Lee, JW, Ku, JC, Sohn, HC, Kim, JW, Kim, U & Sung, NK 2005, 'Epitaxial growth of CoSi2 in a decanano contact opening on a (100) silicon substrate', Applied Physics Letters, vol. 86, no. 22, 221919, pp. 1-3. https://doi.org/10.1063/1.1943500

Epitaxial growth of CoSi2 in a decanano contact opening on a (100) silicon substrate. / Sun, Ho Jung; Lee, Young Jin; Kim, Soo Hyun; Lee, Joo Wan; Ku, Ja Chun; Sohn, Hyun Chul; Kim, Jin Woong; Kim, Uisik; Sung, Nak Kyun.

In: Applied Physics Letters, Vol. 86, No. 22, 221919, 04.07.2005, p. 1-3.

Research output: Contribution to journalArticle

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AU - Sohn, Hyun Chul

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