Epitaxial Growth of Thin Ferroelectric Polymer Films on Graphene Layer for Fully Transparent and Flexible Nonvolatile Memory

Kang Lib Kim, Wonho Lee, Sun Kak Hwang, Se Hun Joo, Suk Man Cho, Giyoung Song, Sung Hwan Cho, Beomjin Jeong, Ihn Hwang, Jong Hyun Ahn, Young Jun Yu, Tae Joo Shin, Sang Kyu Kwak, Seok Ju Kang, Cheolmin Park

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

Enhancing the device performance of organic memory devices while providing high optical transparency and mechanical flexibility requires an optimized combination of functional materials and smart device architecture design. However, it remains a great challenge to realize fully functional transparent and mechanically durable nonvolatile memory because of the limitations of conventional rigid, opaque metal electrodes. Here, we demonstrate ferroelectric nonvolatile memory devices that use graphene electrodes as the epitaxial growth substrate for crystalline poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) polymer. The strong crystallographic interaction between PVDF-TrFE and graphene results in the orientation of the crystals with distinct symmetry, which is favorable for polarization switching upon the electric field. The epitaxial growth of PVDF-TrFE on a graphene layer thus provides excellent ferroelectric performance with high remnant polarization in metal/ferroelectric polymer/metal devices. Furthermore, a fully transparent and flexible array of ferroelectric field effect transistors was successfully realized by adopting transparent poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] semiconducting polymer.

Original languageEnglish
Pages (from-to)334-340
Number of pages7
JournalNano letters
Volume16
Issue number1
DOIs
Publication statusPublished - 2016 Jan 13

Fingerprint

Ferroelectric films
Graphite
Epitaxial growth
Polymer films
Graphene
Ferroelectric materials
graphene
Data storage equipment
vinylidene
Metals
polymers
fluorides
Polymers
Polarization
Semiconducting polymers
Electrodes
Functional materials
metals
Crystal symmetry
Field effect transistors

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Kim, Kang Lib ; Lee, Wonho ; Hwang, Sun Kak ; Joo, Se Hun ; Cho, Suk Man ; Song, Giyoung ; Cho, Sung Hwan ; Jeong, Beomjin ; Hwang, Ihn ; Ahn, Jong Hyun ; Yu, Young Jun ; Shin, Tae Joo ; Kwak, Sang Kyu ; Kang, Seok Ju ; Park, Cheolmin. / Epitaxial Growth of Thin Ferroelectric Polymer Films on Graphene Layer for Fully Transparent and Flexible Nonvolatile Memory. In: Nano letters. 2016 ; Vol. 16, No. 1. pp. 334-340.
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abstract = "Enhancing the device performance of organic memory devices while providing high optical transparency and mechanical flexibility requires an optimized combination of functional materials and smart device architecture design. However, it remains a great challenge to realize fully functional transparent and mechanically durable nonvolatile memory because of the limitations of conventional rigid, opaque metal electrodes. Here, we demonstrate ferroelectric nonvolatile memory devices that use graphene electrodes as the epitaxial growth substrate for crystalline poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) polymer. The strong crystallographic interaction between PVDF-TrFE and graphene results in the orientation of the crystals with distinct symmetry, which is favorable for polarization switching upon the electric field. The epitaxial growth of PVDF-TrFE on a graphene layer thus provides excellent ferroelectric performance with high remnant polarization in metal/ferroelectric polymer/metal devices. Furthermore, a fully transparent and flexible array of ferroelectric field effect transistors was successfully realized by adopting transparent poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] semiconducting polymer.",
author = "Kim, {Kang Lib} and Wonho Lee and Hwang, {Sun Kak} and Joo, {Se Hun} and Cho, {Suk Man} and Giyoung Song and Cho, {Sung Hwan} and Beomjin Jeong and Ihn Hwang and Ahn, {Jong Hyun} and Yu, {Young Jun} and Shin, {Tae Joo} and Kwak, {Sang Kyu} and Kang, {Seok Ju} and Cheolmin Park",
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Kim, KL, Lee, W, Hwang, SK, Joo, SH, Cho, SM, Song, G, Cho, SH, Jeong, B, Hwang, I, Ahn, JH, Yu, YJ, Shin, TJ, Kwak, SK, Kang, SJ & Park, C 2016, 'Epitaxial Growth of Thin Ferroelectric Polymer Films on Graphene Layer for Fully Transparent and Flexible Nonvolatile Memory', Nano letters, vol. 16, no. 1, pp. 334-340. https://doi.org/10.1021/acs.nanolett.5b03882

Epitaxial Growth of Thin Ferroelectric Polymer Films on Graphene Layer for Fully Transparent and Flexible Nonvolatile Memory. / Kim, Kang Lib; Lee, Wonho; Hwang, Sun Kak; Joo, Se Hun; Cho, Suk Man; Song, Giyoung; Cho, Sung Hwan; Jeong, Beomjin; Hwang, Ihn; Ahn, Jong Hyun; Yu, Young Jun; Shin, Tae Joo; Kwak, Sang Kyu; Kang, Seok Ju; Park, Cheolmin.

In: Nano letters, Vol. 16, No. 1, 13.01.2016, p. 334-340.

Research output: Contribution to journalArticle

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AU - Kim, Kang Lib

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AU - Cho, Suk Man

AU - Song, Giyoung

AU - Cho, Sung Hwan

AU - Jeong, Beomjin

AU - Hwang, Ihn

AU - Ahn, Jong Hyun

AU - Yu, Young Jun

AU - Shin, Tae Joo

AU - Kwak, Sang Kyu

AU - Kang, Seok Ju

AU - Park, Cheolmin

PY - 2016/1/13

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N2 - Enhancing the device performance of organic memory devices while providing high optical transparency and mechanical flexibility requires an optimized combination of functional materials and smart device architecture design. However, it remains a great challenge to realize fully functional transparent and mechanically durable nonvolatile memory because of the limitations of conventional rigid, opaque metal electrodes. Here, we demonstrate ferroelectric nonvolatile memory devices that use graphene electrodes as the epitaxial growth substrate for crystalline poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) polymer. The strong crystallographic interaction between PVDF-TrFE and graphene results in the orientation of the crystals with distinct symmetry, which is favorable for polarization switching upon the electric field. The epitaxial growth of PVDF-TrFE on a graphene layer thus provides excellent ferroelectric performance with high remnant polarization in metal/ferroelectric polymer/metal devices. Furthermore, a fully transparent and flexible array of ferroelectric field effect transistors was successfully realized by adopting transparent poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] semiconducting polymer.

AB - Enhancing the device performance of organic memory devices while providing high optical transparency and mechanical flexibility requires an optimized combination of functional materials and smart device architecture design. However, it remains a great challenge to realize fully functional transparent and mechanically durable nonvolatile memory because of the limitations of conventional rigid, opaque metal electrodes. Here, we demonstrate ferroelectric nonvolatile memory devices that use graphene electrodes as the epitaxial growth substrate for crystalline poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE) polymer. The strong crystallographic interaction between PVDF-TrFE and graphene results in the orientation of the crystals with distinct symmetry, which is favorable for polarization switching upon the electric field. The epitaxial growth of PVDF-TrFE on a graphene layer thus provides excellent ferroelectric performance with high remnant polarization in metal/ferroelectric polymer/metal devices. Furthermore, a fully transparent and flexible array of ferroelectric field effect transistors was successfully realized by adopting transparent poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] semiconducting polymer.

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