Epitaxial growth of Y2O3 films on Si(100) without an interfacial oxide layer

S. C. Choi, M. H. Cho, S. W. Whangbo, C. N. Whang, S. B. Kang, S. I. Lee, M. Y. Lee

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Abstract

Heteroepitaxial Y2O3 films were grown on Si(100) substrates by the technique of reactive ionized cluster beam deposition. The crystallinity of the films was investigated with reflection high energy electron diffraction (RHEED), glancing angle x-ray diffraction (GXRD), and the interface was examined by high resolution transmission electron microscopy (HRTEM). Under the condition of 5 kV acceleration voltage at the substrate temperature of 800 °C, the Y2O3 film grows epitaxially on the Si(100) substrate. RHEED and GXRD results revealed that the epitaxial relationship between Y2O3 and Si(100) is Y2O3(110)//Si(100), and HRTEM observation showed a sharp interface without an amorphous layer.

Original languageEnglish
Pages (from-to)903-905
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number7
DOIs
Publication statusPublished - 1997 Aug 18

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Choi, S. C., Cho, M. H., Whangbo, S. W., Whang, C. N., Kang, S. B., Lee, S. I., & Lee, M. Y. (1997). Epitaxial growth of Y2O3 films on Si(100) without an interfacial oxide layer. Applied Physics Letters, 71(7), 903-905. https://doi.org/10.1063/1.119683